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1. www.alldatasheet.com › MICROSEMI › 2N60812N6081 Datasheet(PDF) - Microsemi Corporation

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   Part #: 2N6081. Download. File Size: 279Kbytes. Page: 5 Pages. Description: RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS. Manufacturer: Microsemi Corporation.

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2. alltransistors.com › transistor2N6081 Datasheet, Equivalent, Cross Reference Search

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   2N6081 Datasheet, Equivalent, Cross Reference Search. Type Designator: 2N6081. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 31 W. Maximum Collector-Base Voltage |Vcb|: 36 V. Maximum Collector-Emitter Voltage |Vce|: 18 V. Maximum Emitter-Base Voltage |Veb|: 4 V. Maximum Collector Current |Ic max|: 2.5 A.

3. People also ask

   Who makes 2n6081 RF transmitters?

   • New Jersey Semiconducto... 2N6081 Datasheet. Part #: 2N6081. Datasheet: 279Kb/5P. Manufacturer: Microsemi Corporation. Description: RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS. 2 Results. Datasheet: 245Kb/3P. Manufacturer: List of Unclassifed Manufacturers.

   2N6081 Datasheet, PDF - Alldatasheet

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   What is the part number for 2n6081?

   • 2N6081 2N Transistors from P1dB RF Power Transistor, 0.1 to 0.2 GHz, 15 W, 6.3 dB, 12.5 V, BiPolar, Stud, VHF Status: Standard | Data Sheet: | RoHS Compliance: Product Specifications Note: Specifications Support Material Related Products Technical Inquiry Delivery/ Return Part Number: 2N6081

   2N6081 P1dB RF Power Transistor|RFMW

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   What is the structure of 2n6027?

   • It is clear from the figure that 2n6027 comes in four layered construction where first layer is P-layer that represents anode. The next layer is N-layer which is a gate. Third layer is left alone while fourth layer is again P-layer that represents the cathode. For external connection, ohmic connections are made on the cathode, gate and anode.

   Introduction to 2n6027 - The Engineering Projects

   www.theengineeringprojects.com/2018/02/introduction-to-2n6027.html

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4. www.alldatasheet.com › view2N6081 Datasheet, PDF - Alldatasheet

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   2N6081 Datasheet. Part #: 2N6081. Datasheet: 279Kb/5P. Manufacturer: Microsemi Corporation. Description: RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS. 2 Results. Datasheet: 245Kb/3P. Manufacturer: List of Unclassifed Manufacturers.

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6. www.rfmw.com › products › detail2N6081 P1dB RF Power Transistor|RFMW

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   RF Power Transistor, 0.1 to 0.2 GHz, 15 W, 6.3 dB, 12.5 V, BiPolar, Stud, VHF. Order 2N6081 P1dB at RFMW, Ltd. View pricing, stock, datasheets, order online, request a quote or submit a technical inquiry.

7. www.datasheets.com › part-details › 2n6081-microchipMicrochip Technology | 2N6081 - Datasheet PDF & Tech Specs

   www.datasheets.com › part-details › 2n6081-microchip

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   2N6081 By Microchip Technology. Microchip Technology's 2N6081 is a trans rf bjt npn 18v 2.5a 4-pin style m135. in the bipolar transistors, rf bjt category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.

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9. talonelectronics.com › images › 2N60812N6081 (SILICON) MRF211 - Talon Electronics

   talonelectronics.com › images › 2N6081

   Specified 12.5 Volt, 175 MHz Characteristics Output Power = 15 W Minimum Gain = 6,3 dB Efficiency = 60%. Characterized with Series Equivalent Large·Signal Impedance. Parameters.

10. www.datasheetcatalog.com › datasheets_pdf › 22N6081 Datasheet pdf - RF & MICROWAVE TRANSISTORS 130... 230 ...

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    Download 2N6081 datasheet from Motorola: pdf 542 kb : Trans GP BJT NPN 18V 2.5A 4-Pin Style M135: Download 2N6081 datasheet from New Jersey Semiconductor: pdf 110 kb : V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor: Download 2N6081 datasheet from SGS Thomson Microelectronics: pdf 238 kb