2N6034, 2N6035, 2N6036. NPN. 2N6038, 2N6039. 4.0 k. 3.0 k. TC = 125°C. 25°C. - 55°C. 6.0 k. 0.04. IC, COLLECTOR CURRENT (AMP). 300. 0.06. 0.1. 0.2. 0.6. 1.0.
May 20, 2009 · 2N6036, 2N6039. Electrical characteristics. Doc ID 5064 Rev 5. 3/10. 2. Electrical characteristics. (Tcase = 25 °C; unless otherwise specified).
The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. Waiting.
The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, ...
... designed for general-purpose amplifier and low-speed switching applications. Absolute Maximum Ratings: (Note 1). Collector-Emitter Voltage, VCEO.