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2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low ...
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DESCRIPTION. The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. SGS-THOMSON PREFERRED SALESTYPES. COMPLEMENTARY PNP - NPN DEVICES. HIGH CURRENT CAPABILITY.
3 days ago · 2N5886 onsemi Bipolar Transistors - BJT 25A 80V 200W NPN datasheet, inventory, & pricing.
- onsemi
- TO-204-2
- Through Hole
- Bipolar Transistors-BJT
1 day ago · 2N5886 STMicroelectronics Bipolar Transistors - BJT NPN Power Switching datasheet, inventory, & pricing.
- STMicroelectronics
- Bipolar Transistors-BJT
- Through Hole
The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications. Waiting. Product Overview. Features. Low Collector-Emitter Saturation Voltage V CE (sat) = 1.0 Vdc, (max) at I C = 15 Adc. Low Leakage Current I CEX = 1.0 mAdc (max) at Rated Voltage. Excellent DC Current Gain h FE = 20 (min) at ...
Order today, ships today. 2N5886 – Bipolar (BJT) Transistor from Microchip Technology. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922. (212)227-6005 FAX: (973) 376-8960. PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886*. Preferred Device. Complementary Silicon High-Power Transistors. . . . designed for general-purpose power amplifier and switching applications.
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