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Specifications ; Transistor Polarity: NPN ; Configuration: Single ; Collector- Emitter Voltage VCEO Max: 100 V ; Collector- Base Voltage VCBO: 100 V.
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FEATURES: ? NPN POWER AMPLIFIER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/580. Package Carrier: ESD Bag. Electrical Rating, Symbol, Min, Typ, Max ...
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The 2N5681 is a 100V Silicon NPN Bipolar Epitaxial Planar Transistor designed for use as drivers for high power transistors in general purpose amplifier and ...
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2N5681 TIN/LEAD Central Semiconductor Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 4.0Vebo 1.0A 1.0W datasheet, inventory, & pricing.
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Buy Central Semiconductor 2N5681 PBFREE in Box. 2N5681 Series 100 V 1 A NPN Through Hole Silicon Transistor - TO-39 from Future Electronics.
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, ...
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Order today, ships today. 2N5681 – Bipolar (BJT) Transistor NPN 100 V 1 A 1 W Through Hole TO-39 from Microchip Technology. Pricing and Availability on ...
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The 2N5681 is a NPN Bipolar Power Transistor Vceo=100v, Ic=1A, Hfe=150 designed for use as drivers for high power transistors in general purpose amplifier ...
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The 2N5681 is a NPN Bipolar Power Transistor Vceo=100v, Ic=1A, Hfe=150 designed for use as drivers for high power transistors in general purpose amplifier ...
2N5681 Transistor Datasheet pdf, 2N5681 Equivalent. Parameters and Characteristics.