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The CENTRAL SEMICONDUCTOR 2N3819 is a silicon. N-Channel JFET designed for RF amplifier and mixer. applications. MARKING: FULL PART NUMBER. TO-92 CASE. MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage. Drain-Source Voltage. Gate-Source Voltage. Continuous Gate Current. Power Dissipation. Operating and Storage Junction Temperature. SYMBOL. VDG VDS VGS.
Download. File Size: 33Kbytes. Page: 3 Pages. Description: N-Channel RF Amplifier. Manufacturer: Fairchild Semiconductor.
2N3819. N-Channel RF Amplifier. This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. 1. TO-92. 1. Drain 2. Gate 3. Source. Epitaxial Silicon Transistor. Absolute Maximum Ratings* TC=25°C unless otherwise noted.
Dec 9, 2020 · 2N3819 is an N- Channel - Depletion layer JFET that is widely used in RF-based audio equipment for amplification and other purposes. It is a VHF / UHF Amplifier. It has a Drain-Source Voltage of 25 Vdc with a Drain-Gate voltage of 25 Vdc. The Gate-Source Voltage is 25V. The 2N3819 could provide 100mAdc of Drain current.
2N3819 is a general-purpose N-channel Junction Field Effect Transistor. It operates in depletion-mode and requires reverse biasing to turn off. It is designed for medium to high range frequencies. Furthermore, it has a high gain for wideband frequencies and has an importance in VHF/UHF based systems. It is a small-signal device capable of fast ...
View 2N3819 datasheet for technical specifications, dimensions and more at DigiKey.
2N3819 JFET VHF/UHF Amplifier. N–Channel – Depletion. MAXIMUM RATINGS. Rating Symbol Value Unit Drain–Source Voltage VDS25 Vdc Drain–Gate Voltage VDG25 Vdc Gate–Source Voltage VGS25 Vdc Drain Current ID100 mAdc Forward Gate Current IG(f)10 mAdc Total Device Dissipation @ TA= 25°C Derate above 25°C PD.
