Search Results
1N5817 is a series of metal−to−silicon power diodes with Schottky Barrier principle, low VF, low stored charge, and high efficiency. It is suitable for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. See data sheet for features, ordering information, and ordering and shipping details.
- 182KB
- 8
1N5817-T DO-41 (Plastic) 5K 13” Tape & Reel 1N5818-T DO-41 (Plastic) 5K 13” Tape & Reel 1N5819-T DO-41 (Plastic) 5K 13” Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2.
- 281KB
- 4
The 1N5817 is a low voltage, high frequency, fast switching rectifier diode with a guardring for overvoltage protection. It has a low forward voltage drop, a high frequency operation, and a solder dip temperature of 275 °C max.
- 69KB
- 4
Jan 22, 2019 · Learn about the 1N5817 Schottky diode, a low forward voltage drop and high switching speed device for high frequency applications. Find out its pin configuration, features, applications, and alternative diodes.
1N5817: 96Kb / 6P: SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS Vishay Siliconix: 1N5817: 70Kb / 4P: Schottky Barrier Rectifier Revision: 20-Oct-09: Shenzhen Yixinwei Techn... 1N5817: 253Kb / 2P: 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Semikron International: 1N5817: 127Kb / 2P: Schottky barrier rectifiers diodes List of Unclassifed Man ...
Apr 18, 2024 · 1N5817 STMicroelectronics Schottky Diodes & Rectifiers Vr/20V Io/1A BULK datasheet, inventory, & pricing.
Jul 4, 2011 · 1N5817 is a low drop power Schottky rectifier for switch mode power supplies and high frequency DC to DC converters. It has a forward voltage drop of 0.45 V, a repetitive peak reverse voltage of 20 V, and a junction to ambient thermal resistance of 45 °C/W.
