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  1. 10N100U1 800 ns 10N100AU1 500 ns E off 10N100AU1 2 3 mJ t d(on) 100 ns t ri 200 ns E on 1.1 mJ t d(off) 600 1000 ns t fi 10N100U1 1250 2000 ns 10N100AU1 600 1000 ns E off 10N100U1 5.0 mJ 10N100AU1 2.5 mJ R thJC 1.2 K/W R thCK 0.25 K/W Reverse Diode (FRED) Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min ...

  2. View IXGH10N100U1/AU1 by IXYS datasheet for technical specifications, dimensions and more at DigiKey.

  3. IXGH10N100U1/AU1 Datasheet by IXYS. View All Related Products | Download PDF Datasheet. © 1997 IXYS All rights reserved. TO-247 AD. G CE. G = Gate, C = Collector, E = Emitter, TAB = Collector. Symbol Test Conditions Maximum Ratings. V CES TJ= 25°C to 150°C 1000 V. V CGR TJ= 25°C to 150°C; RGE = 1 MΩ1000 V. V GES Continuous ±20 V.

  4. 10N100U1: Category: Discrete => IGBTs (Insulated Gate Bipolar Transistors) Title: Medium Voltage 600-1199 Volts: Description: Low Vce(sat) High Speed Igbt With Diode: Company: IXYS Corporation Datasheet: Download 10N100U1 Datasheet: Ask AI

  5. 10N100 Datasheet. Part #: BV0914AP5I155D010N100. Datasheet: 184Kb/2P. Manufacturer: Xtaltq Technologies Co.,Ltd.. Description: SMD Package(9.2×14.2mm). 16 Results.

  6. Products related to this Datasheet: IXGH10N100U1, IXGH10N100AU1, IGBT 1000V 20A 100W TO247AD

  7. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,796 ...