SOD323 SILICON HYPERABRUPT
VARIABLE CAPACITANCE DIODES
ISSUE 1 - NOVEMBER 1998
7
FEATURES
*
VHF Tuning
*
Octave Tuning from 0 TO 6 Volts
*
High Reliability and Low Parasitics
*
Low Leakage (Typically <200pA at 10V)
*
Miniature Surface Mount Package
APPLICATIONS
*
Mobile Radios and Pagers
*
Cellular Telephones
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Reverse Voltage
V
R
12
V
Forward Current
I
F
100
mA
Power Dissipation at T
amb
=25°C
P
tot
330
mW
Junction Temperature
T
j
125
°C
Storage Temperature
T
stg
-55 to 150
°C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 10 x 8 x 0.6mm
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
PARAMETER
SYMBOL MIN
MAX
UNIT
CONDITIONS
Breakdown Voltage
V
BR
12
Volts
I
R
=10
µ
A
Reverse Leakage
I
R
100
nA
V
R
=8V
TUNING CHARACTERISTICS (T
amb
=25°C)
Type
Capacitance
@V
R
=1V
Capacitance @V
R
=2.5 V
Capacitance
@V
R
=4 V
Figure of merit
minimum Q
V
R
=4 V,
f=50MHz
Part-
mark
Min.
pF
Min.
pF
Max.
pF
Max.
pF
ZMV930
8.70
4.30
5.50
2.90
200
AH
ZMV931
14.50
6.50
7.80
4.00
300
AJ
ZMV932
17.00
8.50
10.50 5.50
200
AK
ZMV933
42.00
18.00 27.00 12.00
150
AL
ZMV933A
42.00
20.25
24.75
12.00
150
AM
ZMV934
95.00
40.00 65.00 25.00
80
AN
ZMV934A
95.00
47.25
57.75
25.00
80
AO
ZMV930
SERIES
C
A
SOD323
1
3
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