ABSOLUTE MAXIMUM RATINGS

Collector-E mitter Voltage
Collector-B as e Voltage
E mitter-B as e Voltage
Collector Current (DC)

Symbol

VCE O

VCB O

VEB O

IC(DC)

PNP/WTD772

NPN/WTD882

Unit

Vdc
Vdc
Vdc
Adc

Rating

Characteristics

Symbol

Min

Max

Unit

ELECTRICAL CHARACTERISTICS

Collector-E mitter B reakdown Voltage (IC= -10/ 10 mAdc, IB =0)

Collector-B as e B reakdown Voltage (IC= -100/ 100 µAdc, IE=0)

E mitter-B as e B reakdown Voltage (IE= -100/ 100 µAdc, IC=0)

Collector Cutoff Current (VCE = -30/ 30 Vdc, I =0)

Collector Cutoff Current (VCB = -40/ 40 Vdc, IE=0)

E mitter Cutoff Current (VEB = -6.0/ 6.0V c, I =0)

V(B R )CEO

V(B R )CB O

V(B R )EB O

ICE0

ICB O

IEB O

-5.0/ 5.0

-1.0/ 1.0

Vdc

uAdc

WTD772

WTD882

TO-252/D-PAK

Ts tg

P D

WEITRON

http://www.weitron.com.tw

PNP/NPN Epitaxial Planar Transistors

(Ta=25 C)

-40
-5.0
-3.0

5.0

3.0

-30

Collector Current (P uls e)

I (P ulse)

-7.0

7.0

Adc

B as e Current

(1 )

-0.6

0.6

Total Device Dis s ipation Tc=25°C

=25°C

10
1.4

Junction Temperature

T j

150

S torage, Temperature

-55 to +150

Device Marking

WT D772=B 772 ,

WT D882=D882

-30/ 30

-40/ 40

-1.0/ 1.0

NOT E : 1.P W 350us, duty cycle 2%

1. BASE

2. COLLECTOR

3. EMITTER

Lead(Pb)-Free

P b

Current-Gain-Bandwidth Product
(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)

MHz

Collector-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)

Base-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)

hFE

VCE(sat)

VBE(sat)

Vdc

ON CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

(TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Unit

Min

Max

WTD772

WTD882

WEITRON

http://www.weitron.com.tw

(IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc)

DC Current Gain

(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)

400

(1)

(2)

-0.5/0.5

-2.0/2.0

80/90

Classification of hFE(1)

Rank

Range

60-120

100-200

160-320

200-400

TYP

WEITRON

http://www.weitron.com.tw

WTD772

WTD882

150

100

F1. Total Power Dissipation VS.

Ambient Temperature

Ta-Amient Temperature- C

P
T
-
T
o
t
a
l

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n
-
W

NOTE

1. Aluminum heat sink

of 1.0 mm thickness.

2. With no insulator film.

3. With silicon compound.

infin

ite h

t sin

100 c

25 cm

9 cm

Without heat sink

F3. Thermal Resistance VS.

0.1

0.3

100

300 1000

Pulse Width

0.3

PW-Pulse Width-ms

4
R

t
h
-
T
h
e
r
m

a
l

R

e
s
i
s
t
a
n
c
e
-

C

/
W

=10V

I =1.0A

Duty=0.001

-
I
c
,
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
(
A
)

F4. Safe Operating Areas

Ic(max),DC

Ic(max),Pulse

10m

1mS

0.1m

V -Collector to Emitter Voltage-V

100

0.01

0.03

0.1

0.3

NOTE

1. Tc=25 C

2. Curves must be derated

linearly with increase of

temperature and Duty Cycle.

(Sin

gle n

onre

petiti

ve p

ulse

)

Diss

ipatio

Lim

ited

s/b L

imite

V

M

A
X

E
O

=10

0 us

PW<

10 ms

Duty Cycle 50 %

( )

F5. Collector Current VS. Collector

-Collector-Emitter Voltage(V)

-
I
c
,
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
(
A
)

IB=-1mA

IB=-2mA

IB=-3mA

IB=-4mA

IB=-5mA

IB=-6mA

IB=-7mA

IB=-8MA

IB=-9mA

IB=-10mA

To Emitter Voltage

-4

-8

-12

-16

-20

-2.0

-1.6

-1.2

-0.8

-0.4

Pulse Test

WTD772

F6. Collector Current VS. Collector

-Collector-Emitter Voltage(V)

-
I
c
,
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
(
A
)

IB=1mA

IB=2mA

IB=3mA

IB=4mA

IB=5mA

IB=6mA

IB=7mA

IB=8MA

IB=9mA

IB=10mA

To Emitter Voltage

2.0

1.6

1.2

0.8

0.4

Pulse Test

WTD882

Tc,Case Temperature(°C)

F.2 Derating Curve for All Types

150

100

S/b

limite

Dis

sip

ati

on li

mite

r
c
e

t
a

f

R

t
e

r
r
e

t
-
%

WEITRON

http://www.weitron.com.tw

WTD772

WTD882

F7.

Ic-Collector Current(A)

0.001 0.003 0.01 0.03

0.1

0.3

100

300

600

1000

h ,

h

,

F
E

V -I

-
D
C

C
u
r
r
e
n
t

G

a
i
n

=2.0V

Puse Test

WTD772

WTD882

Ic-Collector Current(A)

F8.

(sa

(sat)

0.003

0.01

0.03

0.1

0.3

0.001

0.003

0.006

0.06

0.6

V , V ,

CE(sat)

-
C

o
l
l
e
c
t
o
r

S

a
t
u
r
a
t
i
o
n

V

o
l
t
a
g
e
(
V

)

(
s
a
t
)

BE(sat)

-
B

a
s
e

S

a
t
u
r
a
t
i
o
n

V

o
l
t
a
g
e
(
V

)

(
s
a

t
)

-Ic

WTD772

WTD882

Ic-Collector Current(A)

F9. f - I

0.01

0.03

0.1

0.3

100

300

1000

f

-
G

a
i
n

B

a
n
d
w

i
d
t
h

P

r
o
d
u
c
t
(
M

Z
)

WTD882

WTD772

V =5.0V

Forecd air

Cooling

(with heat sink)

F10.

C -V , C -V

100

300

V -Collector to Base Voltage(V)

V -Emitter to Base Voltage(V)

i
b
-
I
n
p
u
t

C

a
p
a
c
i
t
a
n
c
e
(
P

)

o
b
-
O

u
t
p
u
t

C

a
p
a
c
i
t
a
n
c
e
(
P

)

f=1.0MHz

I =0(Cob)

I =0(Cib)

E
C

WTD882

WTD772

Cob

Cib

WTD882

WTD772

WTD

882

Part Number WTD882