TCST110. up to TCST230.
Vishay Telefunken
1 (9)
www.vishay.com
Document Number 83764
Rev. A5, 08Jun99
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
Applications
D
Contactless optoelectronic switch, control and
counter
Features
D
Compact construction
D
No setting efforts
D
Polycarbonate case protected against
ambient light
D
2 case variations
D
3 different apertures
D
CTR selected in groups
(regarding fourth number of type designation)
15136
A)
B)
+
+
95 10796
7.6
0.3"
E
D
Top view
Order Instruction
Ordering Code
Resolution (mm) / Aperture (mm)
Remarks
TCST1103
A)
0.6 / 1.0
No mounting flags
TCST2103
B)
With two mounting flags
TCST1202
A)
0.4 / 0.5
No mounting flags
TCST2202
B)
With two mounting flags
TCST1300
A)
0.2 / 0.25
No mounting flags
TCST2300
B)
With two mounting flags
TCST110. up to TCST230.
Vishay Telefunken
www.vishay.com
2 (9)
Rev. A5, 08Jun99
Document Number 83764
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
3
A
Power dissipation
T
amb
25
°
C
P
V
100
mW
Junction temperature
T
j
100
°
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
100
mA
Collector peak current
t
p
/T = 0.5, t
p
10 ms
I
CM
200
mA
Power dissipation
T
amb
25
°
C
P
V
150
mW
Junction temperature
T
j
100
°
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Total power dissipation
T
amb
25
°
C
P
tot
250
mW
Operating temperature range
T
amb
55 to +85
°
C
Storage temperature range
T
stg
55 to +100
°
C
Soldering temperature
2 mm from case, t
5 s
T
sd
260
°
C
TCST110. up to TCST230.
Vishay Telefunken
3 (9)
www.vishay.com
Document Number 83764
Rev. A5, 08Jun99
Electrical Characteristics
(T
amb
= 25
°
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 60 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
70
V
Emitter collector voltage
I
E
= 10
m
A
V
ECO
7
V
Collector dark current
V
CE
= 25 V, I
F
= 0, E = 0
I
CEO
100
nA
Coupler
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
Current transfer ratio
V
CE
= 5 V,
I
F
= 20 mA
TCST1103,
TCST2103
CTR
10
20
%
F
TCST1202,
TCST2202
CTR
5
10
%
TCST1300,
TCST2300
CTR
1.25
2.5
%
Collector current
V
CE
= 5 V,
I
F
= 20 mA
TCST1103,
TCST2103
I
C
2
4
mA
F
TCST1202,
TCST2202
I
C
1
2
mA
TCST1300,
TCST2300
I
C
0.25
0.5
mA
Collector emitter
saturation voltage
I
F
= 20 mA,
I
C
= 1 mA
TCST1103,
TCST2103
V
CEsat
0.4
V
I
F
= 20 mA,
I
C
= 0.5 mA
TCST1202,
TCST2202
V
CEsat
0.4
V
I
F
= 20 mA,
I
C
= 0.1 mA
TCST1300,
TCST2300
V
CEsat
0.4
V
Resolution, path of the
shutter crossing the
I
Crel
= 10 to 90%
TCST1103,
TCST2103
s
0.6
mm
radiant sensitive zone
TCST1202,
TCST2202
s
0.4
mm
TCST1300,
TCST2300
s
0.2
mm
TCST110. up to TCST230.
Vishay Telefunken
www.vishay.com
4 (9)
Rev. A5, 08Jun99
Document Number 83764
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Turn-on time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
W
(see figure 1)
t
on
10.0
m
s
Turn-off time
S
C
L
t
off
8.0
m
s
95 10897
+ 5 V
I
C
= 2 mA; adjusted through
input amplitude
R
G
= 50
W
t
p
t
p
= 50
m
s
T
= 0.01
I
F
0
I
F
50
W
100
W
Oscilloscope
R
L
y
1 M
W
C
L
x
20 pF
Channel I
Channel II
Figure 1. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 2. Switching times
TCST110. up to TCST230.
Vishay Telefunken
5 (9)
www.vishay.com
Document Number 83764
Rev. A5, 08Jun99
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
30
60
90
120
0
100
200
300
400
150
95 11088
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
°
C )
Coupled device
Phototransistor
IR-diode
Figure 3. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
96 11862
F
I Forward Current ( mA
)
Figure 4. Forward Current vs. Forward Voltage
25
0
25
50
0
0.5
1.0
1.5
2.0
CTR Relative Current
T
ransfer
Ratio
rel
T
amb
Ambient Temperature (
°
C )
100
95 11089
75
V
CE
=5V
I
F
=20mA
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
0
25
50
75
1
10
100
1000
10000
I Collector Dark Current,
CEO
T
amb
Ambient Temperature (
°
C )
100
95 11090
with open Base ( nA
)
V
CE
=25V
I
F
=0
Figure 6. Collector Dark Current vs. Ambient Temperature
0.001
0.010
0.100
1.000
10.000
0.1
1.0
10.0
100.0
I
F
Forward Current ( mA )
96 12066
V
CE
=5V
I Collector Current ( mA
)
C
Figure 7. Collector Current vs. Forward Current
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
V
CE
Collector Emitter Voltage ( V )
96 12067
I Collector Current ( mA
)
C
20mA
10mA
5mA
2mA
1mA
I
F
=50mA
Figure 8. Collector Current vs. Collector Emitter Voltage
PDF 
ZIP