ChipFind - Datasheet

Part Number SD1729

Download:  PDF   ZIP
HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.500 4LFL (M174)
epoxy sealed
.
OPTIMIZED FOR SSB
.
30 MHz
.
28 VOLTS
.
IMD
-
30 dB
.
COMMON EMITTER
.
GOLD METALLIZATION
.
P
OUT
=
130 W PEP WITH 12 dB GAIN
DESCRIPTION
The SD1729 is a Class AB 28 V epitaxial silicon
NPN planar transistor designed primarily for SSB
communications. This device utilizes emitter bal-
lasting to achieve extreme ruggedness under
severe operating conditions.
PIN CONNECTION
BRANDING
TH416
ORDER CODE
SD1729
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
°
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
70
V
V
CEO
Collector-Emitter Voltage
35
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
12
A
P
DISS
Power Dissipation
175
W
T
J
Junction Temperature
+200
°
C
T
STG
Storage Temperature
-
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance
1.0
°
C/W
SD1729 (TH416)
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
°
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
30 MHz
V
CE
=
28 V
I
CQ
=
150 mA
130
--
--
W
G
P
P
OUT
=
130 W PEP
V
CE
=
28 V
I
CQ
=
150 mA
12
--
--
dB
IMD*
P
OUT
=
130 W PEP
V
CE
=
28 V
I
CQ
=
150 mA
--
--
-
30
dBc
c
P
OUT
=
130 W PEP
V
CE
=
28 V
I
CQ
=
150 mA
37
--
--
%
C
OB
f
=
1 MHz
V
CB
=
28 V
--
220
--
pF
N ote:
* f
1
=
30.00 MHz, f
2
=
30. 001 MHz
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CES
I
C
=
50 mA
V
BE
=
0 V
70
--
--
V
BV
CEO
I
C
=
100 mA
I
B
=
0 mA
35
--
--
V
BV
EBO
I
E
=
20 mA
I
C
=
0 mA
4.0
--
--
V
I
CES
V
CE
=
35 V
I
E
=
0 mA
--
--
20
mA
h
FE
V
CE
=
5 V
I
C
=
7 A
18
--
50
--
DYNAMIC
TYPICAL PERFORMANCE
SAFE OPERATING AREA
SD1729 (TH416)
2/4
TEST CIRCUIT
C1
: 20 - 120pF
C2
: 50 - 300pF
C3, C4
: 3.9nF
C5
: 100nF
C6
: 2.2
µ
F
C7
: 2 x 180pF in Parallel
C8
: 3 x 56pF and 33pF in Parallel
C9
: 4 x 56pF and 68pF in Parallel
C10, C11 : 360pF
L1
: 88nF
L2
: 22
µ
H Choke Coil
L3, L5 : 80nF
L4
: Ferroxcube Choke Coil
R1
: 0.55
R2
: 27
R3
: 4.7
TYPICAL PERFORMANCE (cont'd)
INTERMODULATION DISTORTION vs
POWER OUTPUT
SD1729 (TH416)
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1729 (TH416)
4/4