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®
P01 Series
SENSITIVE
0.8A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
P01 SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interruptors, pilot circuits in
solid state relays, stand-by mode power supplies,
smoke and alarm detectors.
Available in through-hole or surface mount pack-
ages, the voltage capability of this series has been
upgrated since its introduction, to reach 600 V.
Symbol
Value
Unit
I
T(RMS)
0.8
A
V
DRM
/V
RRM
400 and 600
V
I
GT
5 to 200
µA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
TO-92
Tl = 55°C
0.8
A
SOT-223
Tamb = 70°C
IT
(AV)
Average on-state current
(180° conduction angle)
TO-92
Tl = 55°C
0.5
A
SOT-223
Tamb = 70°C
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
8
A
tp = 10 ms
7
I
²
t
I
²
t Value for fusing
tp = 10ms
Tj = 25°C
0.24
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
I
GM
Peak gate current
tp = 20 µs
Tj = 125°C
1
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
0.1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
G
A
K
TO-92
(P01xxA)
SOT-223
(P01xxN)
P01 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
THERMAL RESISTANCES
S = Copper surface under tab
PRODUCT SELECTOR
Symbol
Test Conditions
P01xx
Unit
02
11
18
I
GT
V
D
= 12 V R
L
= 140
MIN.
-
4
0.5
µA
MAX.
200
25
5
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 1 k
Tj = 125°C
MIN.
0.1
V
V
RG
I
RG
= 10 µA
MIN.
8
V
I
H
I
T
= 50 mA R
GK
= 1 k
MAX.
5
mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX.
6
mA
dV/dt
V
D
= 67 % V
DRM
R
GK
= 1 k
Tj = 125°C
MIN.
75
80
75
V/µs
V
TM
I
TM
= 1.6 A tp = 380 µs
Tj = 25°C
MAX.
1.95
V
V
t0
Threshold voltage
Tj = 125°C
MAX.
0.95
V
R
d
Dynamic resistance
Tj = 125°C
MAX.
600
m
I
DRM
I
RRM
V
DRM
= V
RRM
= 400 V R
GK
= 1 k
Tj = 25°C
MAX.
1
µA
V
DRM
= V
RRM
= 600 V R
GK
= 1 k
10
µA
V
DRM
= V
RRM
R
GK
= 1 k
Tj = 125°C
MAX.
100
µA
Symbol
Parameter
Value
Unit
R
th(j-i)
Junction to case (DC)
TO-92
80
°C/W
R
th(j-t)
Junction to tab (DC)
SOT-223
30
°C/W
R
th(j-a)
Junction to ambient
TO-92
150
S = 5 cm
²
SOT-223
60
Part Number
Voltage
Sensitivity
Package
400 V
600 V
P0102DA
X
200 µA
TO-92
P0102DN
X
200 µA
SOT-223
P0102MA
X
200 µA
TO-92
P0102MN
X
200 µA
SOT-223
P0111DA
X
25 µA
TO-92
P0111DN
X
25 µA
SOT-223
P0111MA
X
25 µA
TO-92
P0111MN
X
25 µA
SOT-223
P0118DA
X
5 µA
TO-92
P0118DN
X
5 µA
SOT-223
P0118MA
X
5 µA
TO-92
P0118MN
X
5 µA
SOT-223
P01 Series
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ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number
Marking
Weight
Base Quantity
Packing mode
P01xxyA 1AA3
P01xxyA
0.2 g
2500
Bulk
P01xxyA 2AL3
P01xxyA
0.2 g
2000
Ammopack
P0102yN 5AA4
P2y
0.12 g
1000
Tape & reel
P0111yN 5AA4
P1y
0.12 g
1000
Tape & reel
P0118yN 5AA4
P8y
0.12 g
1000
Tape & reel
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout for SOT-223).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
P 01 02 D N 1AA3
SENSITIVE
SCR
SERIES
CURRENT: 0.8A
SENSITIVITY:
02: 200µA
11: 25µA
18: 5µA
VOLTAGE:
D: 400V
M: 600V
PACKAGE:
A: TO-92
N: SOT-223
PACKING MODE:
1AA3: TO-92 bulk (preferred)
2AL3: TO-92 ammopack
5AA4: SOT-223 Tape & Reel
Blank
P(W)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IT(av)(A)
Tlead or Ttab (°C)
1.1
1.0
0.9
0.7
0.8
0.5
0.6
0.1
0.4
0.3
0.2
0.0
0
25
50
75
100
125
IT(av)(A)
1.2
1.1
1.0
0.8
0.9
0.6
0.7
0.2
0.5
0.4
0.3
0.1
0
25
50
75
100
125
0.0
Tamb(°C)
K = [Zth(j-a)/Rth(j-a)]
tp(s)
1.00
0.10
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
P01 Series
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Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:Relative variation of holding current versus
gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C
6
5
4
3
2
1
0
0
-20
-40
20
40
60
80
100
120
140
Tj(°C)
IH[Rgk]/IH[Rgk=1k ]
Rgk(k
)
0.4
0.6
0.8
1.0
0.2
1.6
1.8
2.0
1.2
1.4
dV/dt[Rgk] / dV/dt[Rgk=1k ]
Rgk(k
)
0
0.1
1.0
10.0
dV/dt[Cgk] / dV/dt[Rgk=1k ]
2
1
0
3
4
5
6
7
0
2
4
6
8
10
Cgk(nF)
1
10
100
1000
0
1
2
3
4
5
6
7
8
ITSM(A)
Non repetitive
Tj initial=25°C
Tamb=25°C
Repetitive
Numberofcycles
Onecycle
tp=10ms
ITSM(A), I t(A s)
2
2
100.0
10.0
1.0
0.1
0.01
0.10
1.00
10.00
tp(ms)
P01 Series
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Fig. 10: On-state characteristics (maximum
values).
Fig. 11: SOT-223 Thermal resistance junction to
ambient versus copper surface under tab (Epoxy
printed circuit board FR4, copper thickness:
35
µ
m).
ITM(A)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1E+1
1E+0
1E-1
1E-2
VTM(V)
Rth(j-a) (°C/W)
S (cm )
2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
130
120
110
100
90
80
70
60
50
40
30
20
10
0
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.35
0.053
B
4.70
0.185
C
2.54
0.100
D
4.40
0.173
E
12.70
0.500
F
3.70
0.146
a
0.50
0.019
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