1
E01Z22A34
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXG1118ER
24 pin VQFN (Plastic)
Description
The CXG1118ER is a dual-band (CDMA/GPS) low
noise amplifier/mixer MMIC for the Japan CDMA
cellular phones (J-CDMA). This IC is designed using
the Sony's GaAs J-FET process.
Features
· High gain:
CDMA
LNA High current mode
Gp = 14.5dB (Typ.)
CDMA
MIX
Gc = 12dB (Typ.)
GPS
LNA
Gp = 18dB (Typ.)
GPS
MIX
Gc = 9.5dB (Typ.)
· Low noise figure:
CDMA
LNA High current mode
NF = 1.5dB (Typ.)
CDMA
MIX
NF = 4.5dB (Typ.)
GPS
LNA
NF = 1.7dB (Typ.)
GPS
MIX
NF = 5dB (Typ.)
· Low distortion
CDMA
LNA High current mode
Input IP3 = +3.5dBm (Typ.)
CDMA
MIX
Input IP3 = +2dBm (Typ.)
GPS
LNA
Input IP3 = 5.5dBm (Typ.)
GPS
MIX
Input IP3 = +2dBm (Typ.)
· Low noise amplifier with by-pass switch
· J-CDMA/GPS supported dual band
· Sharing the two-system LO signal source by the
doubler system
· 24-pin VQFN small package
Dual-band Low Noise Amplifier/Mixer
Applications
J-CDMA
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta = 25°C)
· Supply voltage
V
DD
4.5
V
· Input power
P
IN
+5
dBm
· Operating temperature
Topr
35 to +85
°C
· Storage temperature
Tstg
65 to +150
°C
Recommended Operating Conditions
· Supply voltage
V
DD
2.7 to 3.3
V
· Control voltage
V
CTL
(H) 2.4 to 3.3
V
V
CTL
(L)
0 to 0.3
V
GPS IF
OUT
/V
DD
(MIX)
1
GPS MIX RF
IN
2
GND
3
MPX OPT
4
CTL1
5
GPS LNA
OUT
/V
DD
(LNA)
CTL3
CDMA MIX RF
IN
GND
NC
CTL2
CDMA LNA
OUT
/V
DD
(LNA)
CAP
CDMA LNA
IN
GND
LNA OPT
GPS LNA
IN
CAP
LO
IN
V
DD
(GPS LO)
GND
V
DD
(Logic)
V
DD
(CDMA LO)
CDMA IF
OUT
/V
DD
(MIX)
6
18
17
16
15
14
13
12
11
10
9
8
7
19
20
21
22
23
24
×2
Block Diagram and Pin Configuration
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
2
CXG1118ER
Electrical Characteristics
Conditions: V
DD
= 2.7V, V
CTL
(H) = 2.7V, V
CTL
(L) = 0V (Ta = 25°C)
Logic Block
Unit
µA
mA
Max.
50
0.6
Typ.
35
0.3
Min.
--
--
Symbol
I
CTL
(H)
I
DD
Item
Control pin current
Logic power current consumption
Condition
When no signal
CDMA-LNA Block Conditions: f
RF
= 850MHz
1
Conversion from the IM3 suppression ratio for two-wave input: f
RF
= 850MHz/850.9MHz,
P
RF
= 0dBm (G
PSW
mode), P
RF
= 25dBm (G
PL
/G
PH
mode).
Unit
Max.
0.3
5
7.5
3.3
15.5
16
8
2
2
--
--
--
--
--
Typ.
0.1
3.2
5.3
3.8
14
14.5
13
1.5
1.5
28
1
3.5
18
18
Min.
--
--
--
4.3
12.5
13
--
--
--
20
1
1.5
13
13
Control pin condition
L
L
L
L
L
L
H
L
L
L
L
L
L
L
Item
Current consumption
Power gain
Noise figure
Input IP3
Isolation
V
CTL
1
V
CTL
2
V
CTL
3
L
H
H
L
H
H
--
H
H
L
H
H
H
H
L or H
L
H
L or H
L
H
--
L
H
L or H
L
H
L
H
Symbol
I
DDSW
I
DDL
I
DDH
G
PSW
G
PL
G
PH
G
POFF
NF
L
NF
H
IIP3
SW
IIP3
L
IIP3
H
I
SOL
I
SOH
Condition
mA
dB
dB
dBm
dB
When no
signal
When a
small signal
1
When a
small signal
3
CXG1118ER
GPS-MIX Block Conditions: f
RF
= 1575MHz, f
LO
= (f
RF
f
IF
)/2, f
IF
= 110MHz, P
LO
= 10dBm
Unit
Max.
11
11
40
6.5
--
10
Typ.
8
9.5
50
5
2
15
Min.
--
8
--
--
1.5
--
Control pin condition
H
H
L
H
H
H
Item
Current consumption
Conversion gain
Noise figure
Input IP3
LO RF leak
V
CTL
1
V
CTL
2
V
CTL
3
--
--
--
--
--
--
--
--
--
--
--
--
Symbol
I
DD
G
C
G
COFF
NF
IIP3
P
LK
Condition
mA
dB
dB
dBm
dBm
When no signal
When a small
signal
4
@f
LO
=
f
RF
f
IF
4
Conversion from the IM3 suppression ratio for two-wave input: f
RF
= 1574.5MHz/1575.5MHz, P
RF
= 25dBm.
GPS-LNA Block Conditions: f
RF
= 1575MHz
Unit
Max.
7.5
19.5
17
2.2
--
--
Typ.
5.5
18
22
1.7
5.5
28
Min.
--
16.5
--
--
8
23
Control pin condition
H
H
L
H
H
H
Item
Current consumption
Conversion gain
Noise figure
Input IP3
Isolation
V
CTL
1
V
CTL
2
V
CTL
3
--
--
--
--
--
--
--
--
--
--
--
--
Symbol
I
DD
G
P
G
POFF
NF
IIP3
I
SO
Condition
mA
dB
dB
dBm
dB
When no signal
When a small
signal
3
When a small
signal
3
Conversion from the IM3 suppression ratio for two-wave input: f
RF
= 1574.5MHz/1575.5MHz, P
RF
= 30dBm.
CDMA-MIX Block Conditions: f
RF
= 850MHz, f
LO
= f
RF
f
IF
, f
IF
= 110MHz, P
LO
= 10dBm
Unit
Max.
11
13.5
45
6
--
18
Typ.
8
12
55
4.5
2
23
Min.
--
10.5
--
--
0
--
Control pin condition
L
L
H
L
L
L
Item
Current consumption
Conversion gain
Noise figure
Input IP3
LO RF leak
V
CTL
1
V
CTL
2
V
CTL
3
--
--
--
--
--
--
--
--
--
--
--
--
Symbol
I
DD
G
C
G
COFF
NF
IIP3
P
LK
Condition
mA
dB
dB
dBm
dBm
When no signal
When a small
signal
2
--
2
Conversion from the IM3 suppression ratio for two-wave input: f
RF
= 850MHz/850.9MHz, P
RF
= 25dBm.
4
CXG1118ER
Recommended Evaluation Circuit
1
L and R of Pin 9 are used when the optional resistor is added in the low noise amplifier block.
CDMA IF
OUT
V
DD
(MIX)
L3
L4
C3
1
2
3
4
5
6
18
17
16
15
14
13
12
11
10
9
8
7
19
20
21
22
23
24
×2
CTL3
L8
L10
L6
L9
C1
C12
C14
L7
L5
CDMA LNA
OUT
CDMA MIX
IN
LO
IN
CDMA LNA
IN
V
DD
(LNA)
L11
L12
C5
C6
CTL2
C4
L23
L2
C2
L1
C13
L22
L20
L18
L17
CTL1
GPS IF
OUT
V
DD
(Logic)
V
DD
(LO AMP)
GPS MIX
IN
GPS LNA
OUT
GPS LNA
IN
L21
R1
C10
C9
C11
L15
C8
C7
L
R
L14
L13
L19
L16
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11
L12
L13
L14
L15
220nH
220nH
27nH
5.6nH
6.8nH
33nH
12nH
27nH
18nH
22nH
22nH
27nH
2.2nH
22nH
5.6nH
L16
L17
L18
L19
L20
L21
L22
L23
C1
C2
C3
C4
C5
C6
C7
3.3nH
8.2nH
6.8nH
3.9nH
10nH
2.7nH
220nH
220nH
8pF
1000pF
1000pF
100pF
100pF
1000pF
1000pF
C8
C9
C10
C11
C12
C13
C14
R1
L
1
R
1
100pF
18pF
100pF
1000pF
8pF
1000pF
1000pF
100
33nH
--
5
CXG1118ER
Example of Representative Characteristics (Ta = 25°C)
Low Noise Amplifier Block
CDMA G
PH
, NF
H
vs. f
RF
f
RF
RF frequency [MHz]
G
PH
P
o
w
er gain [dB]
NF
H
Noise figure [dB]
860
880
800
6
12
11
10
8
7
13
14
15
16
0
4
2
9
3
1
5
820
840
900
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 2.7V
G
PH
NF
H
GPS G
P
, NF vs. f
RF
f
RF
RF frequency [MHz]
G
P
P
o
w
er gain [dB]
NF
Noise figure [dB]
1585
1605
1525
10
15
14
13
12
11
18
19
20
0
2
1
4
17
16
3
5
1545
1565
1625
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
G
P
NF
CDMA GPL, N
FL
vs. f
RF
f
RF
RF frequency [MHz]
G
PL
P
o
w
er gain [dB]
NF
L
Noise figure [dB]
860
880
800
6
11
10
9
8
7
14
15
16
0
4
3
2
1
13
12
5
820
840
900
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 0V
G
PL
NF
L
6
CXG1118ER
Low Noise Amplifier Block
P
OUT
RF output po
w
er [dBm]
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 0V
f
RF
1 = 850MHz
f
RF
2 = 850.9MHz
CDMA P
OUT
IM3
L
vs. P
IN
P
IN
RF input power [dBm]
10
0
10
40
80
40
60
20
0
20
50
70
30
10
10
30
20
P
OUT
IM3
L
P
OUT
RF output po
w
er [dBm]
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 2.7V
f
RF
1 = 850MHz
f
RF
2 = 850.9MHz
CDMA P
OUT
, IM3
H
vs. P
IN
P
IN
RF input power [dBm]
10
0
10
40
80
40
60
20
0
20
50
70
30
10
10
30
20
P
OUT
IM3
H
P
OUT
RF output po
w
er [dBm]
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
1 = 1574.5MHz
f
RF
2 = 1575.5MHz
GPS P
OUT
IM3 vs. P
IN
P
IN
RF input power [dBm]
10
0
10
40
80
40
60
20
0
20
50
70
30
10
10
30
20
P
OUT
IM3
7
CXG1118ER
Mixer Block
CDMA Gc, NF vs. f
RF
f
RF
RF frequency [MHz]
Gc
Con
v
ersion gain [dB]
NF
Noise figure [dB]
860
880
800
5
14
13
12
11
9
10
8
7
6
15
3
12
10
11
9
8
6
7
5
4
13
820
840
900
GPS Gc, NF vs. f
RF
f
RF
RF frequency [MHz]
Gc
Con
v
ersion gain [dB]
NF
Noise figure [dB]
1585
1605
1525
1
10
9
8
7
5
6
4
3
2
11
3
12
10
11
9
8
6
7
5
4
13
1545
1565
1625
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
LO
= f
RF
110MHz
P
LO
= 10dBm
P
OUT
RF output po
w
er [dBm]
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
1 = 850MHz
f
RF
2 = 850.9MHz
f
LO
= 740MHz
CDMA P
OUT
, IM3 vs. P
IN
P
IN
RF input power [dBm]
10
0
10
40
80
40
60
20
0
20
50
70
30
10
10
30
20
P
OUT
RF output po
w
er [dBm]
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
1 = 1574.5MHz
f
RF
2 = 1575.5MHz
f
LO
= 732.5MHz
GPS P
OUT
, IM3 vs. P
IN
P
IN
RF input power [dBm]
10
0
10
40
80
40
60
20
0
20
50
70
30
10
10
30
20
IM3
G
C
NF
G
C
NF
P
OUT
IM3
P
OUT
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
LO
= f
RF
110MHz
P
LO
= 10dBm
8
CXG1118ER
Mixer Block
CDMA Gc, NF vs. P
LO
P
LO
LO input power [dBm]
Gc
Con
v
ersion gain [dB]
NF
Noise figure [dB]
15.0
0
12
10
8
6
4
2
16
4.0
5.5
14
5.0
4.5
6.0
10.0
7.5
12.5
5.0
2.5
0
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 850MHz
f
LO
= 740MHz
GPS Gc, NF vs. P
LO
P
LO
LO input power [dBm]
Gc
Con
v
ersion gain [dB]
NF
Noise figure [dB]
15.0
0
10
8
6
4
2
12
4.0
5.5
6.0
6.5
5.0
4.5
7.0
10.0
7.5
12.5
5.0
2.5
0
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 1575MHz
f
LO
= 732.5MHz
CDMA IIP3 vs. P
LO
P
LO
LO input power [dBm]
IIP3
Input IP3 [dBm]
15.0
0
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
10.0
7.5
12.5
5.0
2.5
0
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 850MHz
f
LO
= 740MHz
GPS IIP3 vs. P
LO
P
LO
LO input power [dBm]
IIP3
Input IP3 [dBm]
15.0
0
2.5
2.0
1.5
1.0
0.5
3.0
10.0
7.5
12.5
5.0
2.5
0
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 1575MHz
f
LO
= 732.5MHz
NF
G
C
G
C
NF
9
CXG1118ER
Characteristics Example When the Optional Resistor R is Added (Ta = 25°C)
Low Noise Amplifier Block
Measured with the choke inductor (L = 33nH) for decoupling inserted to Pin 9 (LNA OPT pin) in series.
CDMA I
DDL
vs. R
R Optional resistor [
]
I
DDL
Current consumption [mA]
OPEN
2
8
7
6
5
4
3
10
9
47
27
120
15
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 0V
CDMA G
PL
, NF
L
vs. R
R Optional resistor [
]
G
PL
P
o
w
er gain [dB]
NF
L
Noise figure [dB]
OPEN
11
13
12
15
14
1.0
2.0
1.5
3.0
2.5
47
27
120
15
10
CDMA IIP3
L
, I
SOL
vs. R
R Optional resistor [
]
IIP3
L
Input IP3 [dBm]
I
SOL
Isolation [dB]
OPEN
0
3
2
1
5
4
15
18
17
16
20
19
47
27
120
15
10
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 0V
f
RF
1 = 850MHz
f
RF
2 = 850.9MHz
P
RF
= 25dBm
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 0V
f
RF
= 850MHz
P
RF
= 25dBm
IIP3
L
I
SOL
G
PL
NF
L
10
10
CXG1118ER
CDMA I
DDH
vs. R
R Optional resistor [
]
I
DDH
Current consumption [mA]
OPEN
2
8
7
6
5
4
3
10
9
47
27
120
15
10
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 2.7V
GPS I
DD
vs. R
R Optional resistor [
]
I
DD
Current consumption [mA]
OPEN
2
8
7
6
5
4
3
10
9
47
27
120
15
10
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
CDMA G
PH
, NF
H
vs. R
R Optional resistor [
]
G
PH
P
o
w
er gain [dB]
NF
H
Noise figure [dB]
GPS G
P
, NF vs. R
R Optional resistor [
]
G
P
P
o
w
er gain [dB]
NF
Noise figure [dB]
OPEN
16
18
17
20
19
1.0
2.0
1.5
3.0
2.5
47
27
120
15
10
OPEN
12
14
13
16
15
1.0
2.0
1.5
3.0
2.5
47
27
120
15
10
CDMA IIP3
H
, I
SOH
vs. R
R Optional resistor [
]
IIP3
H
Input IP3 [dBm]
I
SOH
Isolation [dB]
OPEN
3
5
4
6
14
19
18
17
16
15
20
47
27
120
15
10
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 2.7V
f
RF
1 = 850MHz
f
RF
2 = 850.9MHz
P
RF
= 25dBm
GPS IIP3, I
SO
vs. R
R Optional resistor [
]
IIP3
Input IP3 [dBm]
I
SO
Isolation [dB]
OPEN
6
3
4
5
1
2
26
29
28
27
31
30
47
27
120
15
10
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 1575MHz
P
RF
= 30dBm
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 2.7V
V
CTL
3 = 2.7V
f
RF
= 850MHz
P
RF
= 25dBm
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
1 = 1574.5MHz
f
RF
2 = 1575.5MHz
P
RF
= 30dBm
G
P
NF
IIP3
H
IIP3
G
PH
NF
H
I
SO
I
SOH
Low Noise Amplifier Block
Measured with the choke inductor (L = 33nH) for decoupling inserted to Pin 9 (LNA OPT pin) in series.
11
CXG1118ER
Characteristics Example When the Optional Resistor R is Added (Ta = 25°C)
Mixer Block
CDMA I
DD
(MIX) vs. R1
R1 Optional resistor [
]
I
DD
(MIX)
Mix
er b
loc
k current consumption [mA]
OPEN
5
8
7
6
10
9
47
27
100
10
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 0V
V
CTL
3 = 0V
GPS I
DD
(MIX) vs. R1
R1 Optional resistor [
]
I
DD
(MIX)
Mix
er b
loc
k current consumption [mA]
OPEN
3
7
6
5
4
8
47
27
100
10
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
CDMA Gc, NF vs. R1
R1 Optional resistor [
]
Gc
Con
v
ersion gain [dB]
NF
Noise figure [dB]
OPEN
10.0
12.0
11.0
13.0
11.5
10.5
12.5
47
27
100
10
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 850MHz
f
LO
= 740MHz
P
LO
= 25dBm
GPS Gc, NF vs. R1
R1 Optional resistor [
]
Gc
Con
v
ersion gain [dB]
NF
Noise figure [dB]
OPEN
6.0
8.0
7.0
10.0
9.0
6.5
8.5
7.5
9.5
4.0
5.0
4.5
8.0
5.5
6.0
6.5
7.0
7.5
4.0
5.0
4.5
7.0
5.5
6.0
6.5
47
27
100
10
CDMA IIP3 vs. R1
R1 Optional resistor [
]
IIP3
Input IP3 [dBm]
OPEN
0
1
3
2
5
4
47
27
100
10
GPS IIP3 vs. R1
R1 Optional resistor [
]
IIP3
Input IP3 [dBm]
OPEN
0
3
2
1
5
4
47
27
100
10
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 1575MHz
f
LO
= 732.5MHz
P
LO
= 25dBm
V
DD
= 2.7V
V
CTL
1 = 0V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 850MHz
f
LO
= 740MHz
P
LO
= 25dBm
V
DD
= 2.7V
V
CTL
1 = 2.7V
V
CTL
2 = 0V
V
CTL
3 = 0V
f
RF
= 1575MHz
f
LO
= 732.5MHz
P
LO
= 25dBm
G
C
NF
G
C
NF
12
CXG1118ER
Recommended Evaluation Board
Front
Enlarged Diagram of Center Part
GPS LNA RF
IN
GPS LNA RF
OUT
GPS MIX RF
IN
CDMA LNA RF
IN
V
DD
(LO AMP)
V
CTL
2 GND
GND
V
DD
(LNA) V
DD
(Logic)
V
DD
(MIX)
V
CTL
1
V
CTL
3
CDMA LNA RF
OUT
CDMA MIX RF
IN
LO
IN
CDMA MIX IF
OUT
GPS MIX IF
OUT
50mm
50mm
C6
C7
C8
L17
C9
C10
L19
L21
C11
R1
L20
C12
L18
L15
L16
L14
L13
L12
C5
L9
L11
L8
L6
L7
L5
C1
L4
L2
L1
L23
L22
L3
C4
C3
C2
C14
C13
L10
Glass fabric-base 4-layer epoxy board (thickness: 0.2mm
× 2)
GND for the whole 2nd and 3rd layers
13
CXG1118ER
LEAD SPECIFICATIONS
ITEM
LEAD MATERIAL
COPPER ALLOY
SOLDER PLATING
Sn-Bi Bi:1-4wt%
LEAD TREATMENT THICKNESS
5-18µm
SPEC.
C
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE MASS
EPOXY RESIN
SOLDER PLATING
COPPER ALLOY
PACKAGE STRUCTURE
4.0
3.6
A
B
0.05 M S A-B C
(0.39)
(0.15)
VQFN-24P-03
24PIN VQFN(PLASTIC)
0.04g
0.2 S A-B C
x 4
x 4
0.4
0.05
0.7
C 0.6
1.0
4.78
TERMINAL SECTION
0.2 ±
0.01
0.225 ±
0.03
Solder Plating
0.14
0.13 ± 0.025
+ 0.09
0.03
(Stand Off)
0.03 ±
0.03 (
1)
0.6 ± 0.1
45°
0.9 ± 0.1
S
PIN 1 INDEX
1
7
12
13
18
19
24
6
0.2 S A-B C
S
Sony Corporation
Package Outline Unit: mm
PDF 
ZIP