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E99143-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
· Supply voltage
V
DD
7
V
· Control voltage
Vctl
5
V
· Input power
Pin
25
dBm
· Operating temperature
Topr
35 to +85
°C
· Storage temperature
Tstg
65 to +150
°C
Description
The CXG1039TN is a high isolation absorptive
SPDT (Single Pole Dual Throw) switch MMIC used
in PCS handsets.
This IC is designed using the Sony's GaAs J-FET
process and operates with CMOS input.
Features
· Absorptive type
· CMOS input control
· Low insertion loss 0.8 dB (Typ.) at 2.0 GHz
· High isolation
50 dB (Typ.) at 2.0 GHz
· Small Package
TSSOP-10pin
Applications
High isolation switch for digital cellular telephones
such as PCS handsets.
Structure
GaAs J-FET MMIC
High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic
10 pin TSSOP (Plastic)
CXG1039TN
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
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CXG1039TN
Pin Configuration
Block Diagram
10pin TSSOP (PLASTIC)
CTL
RF3
GND
GND
RF1
GND
GND
GND
V
DD
RF2
5
1
6
10
Unit : mm
SW1
RF1
SW3
SW4
SW2
RF3
RF2
50
50
Recommended Circuit
CTL
RF1
RF3
RF2
CXG1039TN
C2 100pF
C2 100pF
C2 100pF
1
2
3
4
5
6
7
8
9
10
Rctl 1k
Rrf 100k
C1 100pF
C1 100pF
V
DD
When using the CXG1039TN, the following external components should be used:
C1:
This is used for signal line filtering 100 pF is recommended.
C2:
This is used for RF De-coupling and must be used in all applications. 100 pF is recommended.
Rctl: This is used to give improved ESD performance.
Rrf:
This resistor is used to stabilize the dc operating point at high power levels. A value of 100 k
is
recommended.
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CXG1039TN
Truth Table
CTL
H
L
RF1 - RF2 ON
RF1 - RF3 ON
SW1
ON
OFF
SW2
OFF
ON
SW3
OFF
ON
SW4
ON
OFF
Operating Condition
(Ta=35 °C to +85 °C)
Control voltage (High)
Control voltage (Low)
Bias voltage
Symbol
Vctl (H)
Vctl (L)
V
DD
Min.
2.5
0
2.7
Typ.
Max.
3.6
0.5
4
Unit.
V
V
V
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CXG1039TN
Electrical Characteristics (1)
V
DD
=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50
(Ta=25 °C)
Item
Insertion loss
Isolation
ON port VSWR
OFF port VSWR
3rd order input intercept point
1
Input power for 1 dBm compression
Switching speed
Bias current
Control current
Symbol
IL
ISO
VSWR (ON)
VSWR (OFF)
IP3
P1dB
TSW
I
DD
ICRL
Min.
40
35
12
Typ.
0.8
50
1.2
1.7
17
1
220
80
Max.
1.2
1.5
2.0
5
350
150
Unit
dB
dB
dBm
dBm
µs
µA
µA
1
two-tone input power up to 5 dBm
Electrical Characteristics (2)
V
DD
=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50
(Ta=35 °C to +85 °C)
Item
Insertion loss
Isolation
ON port VSWR
OFF port VSWR
3rd order input intercept point
1
Input power for 1 dBm compression
Switching speed
Bias current
Control current
Symbol
IL
ISO
VSWR (ON)
VSWR (OFF)
IP3
P1dB
TSW
I
DD
ICRL
Min.
40
35
12
Typ.
0.8
50
1.2
1.7
17
1
220
80
Max.
1.4
1.5
2.0
5
450
180
Unit
dB
dB
dBm
dBm
µs
µA
µA
1
two-tone input power up to 5 dBm
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE MASS
EPOXY RESIN
SOLDER PLATING
COPPER ALLOY
PACKAGE STRUCTURE
0.22 0.07
0.5
5
1.2MAX
2.8 ± 0.1
10
6
2.2 ±
0.1
3.2 ±
0.2
0.1 0.05
+ 0.15
0.45 ±
0.15
0° to 10°
1
A
(0.2)
0.22 0.07
+ 0.08
(0.1)
0.12 0.015
+ 0.025
DETAIL A
0.02g
TSSOP-10P-L01
10PIN TSSOP(PLASTIC)
0.1
0.1
M
NOTE: Dimension "
" does not include mold protrusion.
0.25
+ 0.08
Package Outline Unit : mm
CXG1039TN
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