NPN Silicon RF Transistor
BFR 93P
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Marking
Package
1)
Pin Configuration
BFR 93P
Q62702-F1051
GG
SOT-23
1
2
3
B
E
C
Ordering Code
(tape and reel)
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
15
V
Emitter-base voltage
V
EB0
2.5
Collector current
I
C
50
mA
Collector-base voltage
V
CB0
20
Base current
I
B
10
Junction temperature
T
j
150
°C
Ambient temperature range
T
A
65 ... + 150
Total power dissipation,
T
S
65 °C
3)
P
tot
280
mW
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
385
K/W
Junction - soldering point
3)
R
th JS
305
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
3)
T
S
is measured on the collector lead at the soldering point to the pcb.
q
For low-distortion broadband amplifiers up to 1 GHz
at collector currents from 2 mA to 30 mA.
q
CECC-type available: CECC 50002/256.
BFR 93P
BFR 93P
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CE0
15
Emitter-base cutoff current
V
EB
= 2.5 V,
I
C
= 0
I
EB0
100
DC current gain
I
C
= 25 mA,
V
CE
= 5 V
h
FE
30
100
µ
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 20 V,
I
E
= 0
I
CB0
0.05
10
V
Collector-emitter saturation voltage
I
C
= 50 mA,
I
B
= 5 mA
V
CEsat
0.2
0.5
BFR 93P
BFR 93P
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
AC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Power gain
I
C
= 25 mA,
V
CE
= 8 V,
f
= 800 MHz,
Z
S
=
Z
Sopt
, Z
L
=
Z
Lopt
G
pe
13
GHz
Transition frequency
I
C
= 30 mA,
V
CE
= 5 V,
f
= 200 MHz
I
C
= 50 mA,
V
CE
= 5 V,
f
= 200 MHz
f
T
5
4.7
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
ce
0.28
Output capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
obs
0.9
dB
Noise figure
I
C
= 10 mA,
V
CE
= 8 V,
f
= 10 MHz,
Z
S
= 75
I
C
= 5 mA,
V
CE
= 8 V,
f
= 500 MHz,
Z
S
=
Z
Sopt
I
C
= 10 mA,
V
CE
= 8 V,
f
= 800 MHz,
Z
S
= 50
F
1.7
1.9
2.4
pF
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
cb
0.6
0.75
Input capacitance
V
EB
= 0.5 V,
I
C
=
i
c
= 0,
f
= 1 MHz
C
ibo
2.1
Transducer gain
I
C
= 25 mA,
V
CE
= 8 V,
f
= 500 MHz,
Z
0
= 50
I
S
21e
I
2
15.8
mV
Linear output voltage
two-tone intermodulation test
I
C
= 25 mA,
V
CE
= 8 V,
d
IM
= 60 dB,
f
1
= 806 MHz,
f
2
= 810 MHz,
Z
S
=
Z
L
= 50
V
o1
=
V
o2
240
dBm
Third order intercept point
I
C
= 25 mA,
V
CE
= 8 V,
f
= 800 MHz
IP
3
30.5
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