Semiconductor Group
1
PNP Silicon AF Transistors
BCX 78
BCX 79
5.91
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BCX 78
BCX 78-VII
BCX 78-VIII
BCX 78-IX
BCX 78-X
BCX 79
BCX 79-VII
BCX 79-VIII
BCX 79-IX
BCX 79-X
Q62702-C717
Q62702-C626
Q62702-C627
Q62702-C628
Q62702-C629
Q62702-C718
Q62702-C630
Q62702-C631
Q62702-C632
Q62702-C633
TO-92
C
B
E
1
2
3
1)
For detailed information see chapter Package Outlines.
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise at 1 kHz
q
Low noise at low frequencies
q
Complementary types: BCX 58, BCX 59 (NPN)
1
2
3
Semiconductor Group
2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Peak collector current
I
CM
Collector current
I
C
mA
Junction temperature
T
j
°C
Total power dissipation,
T
C
= 70 °C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
R
th JA
250
K/W
100
200
500
150
65 ... + 150
Emitter-base voltage
V
EB0
32
45
32
45
BCX 78
BCX 79
Peak base current
I
BM
200
5
Junction - case
1)
R
th JC
160
1)
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
BCX 78
BCX 79
Semiconductor Group
3
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 2 mA
BCX 78
BCX 79
V
(BR)CE0
32
45
nA
nA
µ
A
µ
A
Collector cutoff current
V
CB
= 32 V
BCX 78
V
CB
= 45 V
BCX 79
V
CB
= 32 V,
T
A
= 150 °C
BCX 78
V
CB
= 45 V,
T
A
= 150 °C
BCX 79
I
CB0
20
20
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
µ
A
BCX 78
BCX 79
V
(BR)CB0
32
45
Emitter-base breakdown voltage
I
E
= 1
µ
A
V
(BR)EB0
5
DC current gain
I
C
= 10
µ
A,
V
CE
= 5 V
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X,
BCX 79 X
I
C
= 2 mA,
V
CE
= 5 V
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X,
BCX 79 X
I
C
= 100 mA,
V
CE
= 1 V
1)
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X,
BCX 79 X
h
FE
20
30
40
100
120
180
250
380
40
45
60
60
140
200
270
340
170
250
350
500
220
310
460
630
nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
20
µ
A
Collector cutoff current
V
CB
= 32 V,
V
BE
= 0.2 V,
T
A
= 100 °C
V
CB
= 45 V,
V
BE
= 0.2 V,
T
A
= 100 °C
I
CE0
20
20
1)
Pulse test:
t
300
µ
s,
D
2 %.
BCX 78
BCX 79
Semiconductor Group
4
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 2.5 mA
V
CEsat
0.6
Base-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 2.5 mA
V
BEsat
1.0
DC characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Base-emitter voltage
I
C
= 10
µ
A,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 1 V
1)
V
BE(on)
0.55
0.52
0.65
0.93
0.75
1)
Pulse test:
t
300
µ
s,
D
2 %.
BCX 78
BCX 79
Semiconductor Group
5
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
250
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
10
k
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X,
BCX 79 X
h
11e
2.7
3.6
4.5
7.5
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X,
BCX 79 X
h
12e
1.5
2
2
3
Unit
Values
Parameter
Symbol
min.
typ.
max.
dB
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 1 kHz,
f
= 200 Hz
F
2
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X,
BCX 79 X
h
21e
200
260
330
520
µ
S
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X,
BCX 79 X
h
22e
18
24
30
50
BCX 78
BCX 79
Semiconductor Group
6
Total power dissipation
P
tot
=
f
(
T
A
;
T
C
)
Permissible pulse load
R
thJA
=
f
(
t
p
)
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 5 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
for max. permissible reverse voltage
BCX 78
BCX 79
Semiconductor Group
7
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 5 V (common emitter configuration)
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
)
h
FE
= 20
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
)
h
FE
= 20
BCX 78
BCX 79
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