ChipFind - Datasheet

Part Number BBY58-02W

Download:  PDF   ZIP
BBY 58-02W
Semiconductor Group
Jul-30-1998
1
Silicon Tuning Diode
Preliminary data
·
Excellent linearity
·
High Q hyperabrupt tuning diode
·
Low series inductance
·
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
·
For low frequency control elements
such as TCXOs and VCXOs
·
Very low capacitance spread
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 58-02W
8
Q62702-B916
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
mA
Forward current
20
I
F
Operating temperature range
T
op
-55 ...+150
°C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 58-02W
Semiconductor Group
Jul-30-1998
2
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 8 V
I
R
-
-
1
nA
Reverse current
V
R
= 8 V,
T
A
= 65 °C
I
R
-
-
100
AC characteristics
pF
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
V
R
= 4 V,
f = 1 MHz
17.5
-
-
5.5
19.3
-
-
6.6
18.3
12.35
8.6
6
C
T
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
C
T1
/
C
T3
2.15
-
-
-
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V,
f = 1 MHz
C
T1
/
C
T4
3.05
3.3
2.8
Series resistance
V
R
= 1 V,
f = 470 MHz
-
r
s
-
0.25
Case capacitance
f = 1 MHz
0.09
pF
-
-
C
C
nH
Series inductance chip to ground
L
s
-
0.6
-
Semiconductor Group
2
1998-11-01
BBY 58-02W
Semiconductor Group
Jul-30-1998
3
Temperature coefficient of the diode
capacitance
T
Cc
=
f (V
R
)
0.0 0.5
1.0 1.5
2.0 2.5 3.0
3.5 4.0
V
5.0
V
R
-4
10
-3
10
-2
10
1/°C
T
Cc
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0.0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
V
5.0
V
R
0
4
8
12
16
20
24
pF
32
C
T
Normalized diode capacitance
C
(TA)
/
C
(25°C)
=
f (T
A
)
f = 1MHz, V
R
= Parameter
-30
-10
10
30
50
70
°C
100
T
A
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
-
1.04
C
TA
/
C
25°C
1V
4V
Semiconductor Group
3
1998-11-01