V
CEO
35
V
V
ECO
6
V
I
C
50
mA
P
C
75
mW
T
opr
°C
T
stg
°C
T
sol
260
°C
(Unit : mm)
(Ta=25°C)
Intermediate Acceptance
High Sensitivity Phototransistor
Features
Applications
Outline Dimensions
1. Epoxy resin package type
2. Compact
1. VCRs
2. Optoelectronic switches
Absolute Maximum Ratings
*1 1 For 3 seconds at the position of 1.4 mm from the resin edge
Parameter
Symbol
Rating
Unit
*1
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
- 25 to + 85
- 40 to + 85
PT495F
PT495F
5 . Visible light cut-off type
4. Long lead pin type
MAX. lead length of 51.5 mm
acceptable to order
(
)
(Note) MAX. lead length of 51.5 mm acceptable to order
Soldering temperature
3. Intermediate acceptance (
: TYP.± 40° )
2 Collector
1 Emitter
2
1
2-0.4
+
0.15
-
0.05
Visible light cut-off
resin (black)
1.55
1.15
0.75
2.8
R1.25
±
0.1
1.5
4.0
43.0
±
1
(
3.0
)(
18.5
)
3.0
2-C0.5
(
1.7
)
1.4
(
2-0.6
)
(
2.54
)
2-0.8
2-0.45
+
0.15
-
0.05
1
2
2.8
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
s
s
s
s
I
C
V
CE
E
V
0.2
0.8
mA
I
CEO
V
CE
= 10V, E
e
= 0
-
-
10
-6
A
V
CE(sat)
I
C
= 0.8mA,
-
-
1.0
V
E
e
p
-
860
-
nm
t
r
V
CE
= 2V, I
C
= 5mA
-
µ
s
t
f
R
L
= 100
-
80
70
400
350
± 40
-
(Ta=25°C)
- 25
0
20
10
30
50
40
60
80
70
25
0
50
100
75
85
75
50
- 25
50
0
25
75
100
175
150
125
100
- 25
0
25
50
75
100
5
10
- 10
10
- 9
5
10
- 8
5
10
- 7
5
10
- 6
5
10
- 5
5
10
- 4
10
- 11
5
5
10
- 1
10
2
5
2
5
1
2
5
20
50
V
CE
= 10V
V
CE
= 2V
E
V
T
a
= 25°C
V
CE
= 2V
°
1
Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
*2
*2
Collector current
Dark current
Collector-emitter saturation voltage
Peak sensitivity wavelength
Response time
Half intensity angle
Rise
Fall
Fig. 1 Collector Power Dissipation vs.
Ambient temperature
Fig. 2 Dark Current vs. Ambient temperature
Fig. 4 Collector Current vs. Irradiance
Fig. 3 Relative Collector Current vs.
Ambient temperature
Collector power dissipation P
C
(
mW
)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Dark current I
CEO
(
A
)
Collector current I
C
(
mA
)
Irradiance E
e
( mW/cm
2
)
PT495F
= 2 lx
-
-
-
-
= 2 1x
Relative collector current (%)
= 2V,
= 1mW/cm
2
*2 E , E : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
v
e
s
T
a
= 25°C
I
C
= 5mA
V
CE
= 2V
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
40
45
50
T
a
= 25°C
E
e
=
P
C
(MAX.)
500
600
700
800
900
1000
1100
1200
0
20
40
60
80
100
T
a
= 25°C
10
100
1000
10
100
5000
1
1000
t
r
t
f
t
s
t
d
t
d
t
r
V
CC
R
L
t
f
10
%
t
s
90
%
0
- 80°
- 90°
- 60°
- 70°
- 50°
- 40°
- 30°
+ 80°
+ 90°
+ 10°
80
20
40
60
- 10°
- 20°
0°
100
+ 70°
+ 60°
+ 50°
+ 40°
+ 20°
+ 30°
(T
a
= 25°C)
Test Circuit for Response Time
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
Relative sensitivity (%)
Response time (
µ
s)
Wavelength
(nm)
Load resistance R
L
(
)
Output Input
Output
Angular displacement
PT495F
Fig. 5 Collector Current vs. Collector-emitter voltage
Fig. 6 Spectral Sensitivity
Fig. 7 Response Time vs. Load Resistance
Fig. 8 Radiation Diagram
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
0.01
1
T
a
= 25°C
I
C
=
0.5mA
1mA
2mA
3mA
5mA
Irradiance E
e
( mW/cm
2
)
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
Fig. 9 Collector-emitter Saturation Voltage
vs. Irradiance
Collector-emitter saturation voltage V
CE
(sat
)
(
V
)
0.25mW/cm
2
0.2mW/cm
2
0.5mW/cm
2
0.15mW/cm
2
0.1mW/cm
2
Relative sensitivity (%)
q
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