(Ta = 25°C)
Features
Applications
Outline Dimensions
(Unit : mm)
Absolute Maximum Ratings
PT4120
PT4120
Side View and Thin Flat Type
2-Phase Output Phototransistor
1. 2-phase PT output type
(Read pitch : 0.94 mm)
2. Compact, thin and flat package
1. Mouses
2. Track balls
3. Encoders
Parameter
Symbol
Rating
Unit
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
6
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
75
mW
Operating temperature
T
opr
- 25 to + 85
°C
Storage temperature
T
stg
- 40 to + 85
°C
Soldering temperature
*1
T
sol
260
°C
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
3.0
PT B
PT A
1.4
3.9
1.5
4.0
16.5
±
1.0
(2.54)
(1.7)
0.8
2-C0.5
6
°
6
°
2.8
6
°
6
°
0.81
0.17
0.47
0.47
0.94
0.7
0.7
1.8
4
°
4
°
4
°
4
°
1.0
2.0
0.15
(1.5)
1
2
3
1
2
3
1.4mm
0.3
MAX.
0.8
MAX.
MAX.0.1
3-0.45
+
0.3
-
0.1
3-0.4
+
0.3
-
0.1
18.0
+
1.5
-
1.0
56
°
±
5.0
1 Emitter (PT A)
3 Emitter (PT B)
*
Tolerance :
±
0.2 mm
Shape of detector portion
Rugged resin
Gate burr
Transparent
epoxy resin
Rugged resin 0.2
MAX.
Soldering area
2 Collector (common)
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
s
s
s
s
(Ta = 25°C)
PT4120
Electro-optical Characteristics
*3 Terminals other than test terminal shall be released.
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Fig. 2 Dark Current vs. Ambient Temperature
- 25
0
25
50
75
100
0
10
20
30
40
50
60
70
80
85
0
25
50
75
100
2
5
2
5
2
5
2
5
V
CE
= 20V
10
-6
10
-7
10
-8
10
-9
10
-10
*2 E , E : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
v
e
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector current
I
C
E
V
= 1 000 lx
*2
0.45
-
1.8
mA
V
CE
= 5V
Dark current
I
CEO
E
e
= 0,V
CE
= 20V
*2
-
-
0.1
µ
A
Collector-emitter saturation voltage
V
CE(sat)
E
V
= 1 000 lx
*2
-
0.1
0.4
V
I
C
= 0.1mA
Collector-emitter breakdown voltage
BV
CEO
I
C
= 0.1mA
35
-
-
V
E
e
= 0
*2
Emitter-collector breakdown voltage
BV
ECO
I
E
= 0.01mA
6
-
-
V
E
e
= 0
*2
Peak sensitivity wavelength
p
-
800
-
nm
Response time
Rise Time
t
r
V
CE
= 2V,I
C
= 2mA
-
3.0
-
µ
s
Fall Time
t
f
-
3.5
-
µ
s
R
L
= 100
2-element I variation
C
R
I
C(a)
/I
C(b)
0.7
-
1.3
-
Collector power dissipation P
C
(mW)
Dark current I
CEO
(A)
Ambient temperature Ta ( °C)
Ambient temperature Ta ( °C)
s
PT4120
40
0
0
20
10
20
30
40
70
50
60
160
100
60
80
120
140
0.1
0.5
V
CE
= 5V
V
CE
= 5V
Fig. 3 Relative Collector Current vs.
Ambient Temperature
E
V
= 1 000 lx
Fig. 4 Collector Current vs. Illuminance
0.0
1.0
2.0
5.0
10.0
20.0
10
20
50
100
200
500
1000 2000
0
0
0.2
0.4
Ev = 1 000 lx
0.6
0.8
1.2
1.4
1.6
750 lx
500 lx
250 lx
100 lx
400
500
600
700
800
900
0
20
40
60
80
100
T
a
= 25°C
1100
1000
Wavelength
(nm)
Fig. 6 Spectral Sensitivity
1
10
0.1
0.2
0.5
2
5
10
1
2
5
20
50
100
V
CE
= 2V
T
a
= 25°C
t
f
t
r
t
r
t
f
Ic = 2mA
Load resistance R
L
(k
)
Fig. 7 Response Time vs. Load Resistance
5
10
15
t
r
R
L
t
f
10
%
90
%
Vcc
Output Input
Output
Test Circuit for Response Time
Fig. 5 Collector Current vs.
Collector-emitter Voltage
Response time t
r
,t
f
(
µ
s)
Ambient temperature Ta (°C)
Illuminance E
V
(lx)
Relative collector current (%)
Collector current Ic (mA)
Collector-emitter voltage V
CE
(V)
20
25
30
35
1
Collector current Ic (mA)
Relative sensitivity (%)
T
a
= 25°C
PT4120
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
Fig. 9 Collector-emitter Saturation Voltage
vs. Irradiance
Fig. 10 Relative Output vs. Distance
(Detector : GL4100)
0
0.2
0.4
0.6
1.0
1.2
1.4
I
C
=0.05mA
Collector-emitter saturation voltage V
CE(sat)
(V)
Irradiance E
e
(mW/cm
2
)
Relative output (%)
0.8
1.6
1.8
2
10
100
1000
I
C
=0.6mA
I
C
=0.4mA
I
C
=0.2mA
I
C
=0.1mA
Distance between emitter and detector d (mm)
1
10
10
100
100
Ta =25°C
1
0.1
0.01
0.1
q
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