(Ta= 25°C)
Features
Applications
Outline Dimensions
(Unit : mm)
Absolute Maximum Ratings
PT4110/PT4110F
PT4110/PT4110F
Side View and Thin Flat Type
Phototransistors
1. Compact and thin flat package
2. Wide beam angle
1. Optoelectronic switches
2. Encoders
Parameter
Symbol
Rating
Unit
mW
Operating temperature
T
opr
°C
Storage temperature
T
stg
°C
Soldering temperature
T
sol
260
°C
3. Visible light cut-off type available (
PT4110F
)
*1
35
6
50
75
- 25 to + 85
- 40 to + 85
V
V
mA
V
CEO
ECO
C
V
I
C
P
3.0
1.4
1.5
4.0
(2.54)
(1.7)
6
°
6
°
2.8
6
°
6
°
0.7
0.7
1.8
4
°
4
°
4
°
4
°
0.15
1
2
2
-
C0.5
1
2
PT4110
PT4110F
MAX. 0.3
MAX. 0.9
MAX. 0.2
MIN. 0.5
MAX. 0.1
2
-
0.45
+
0.3
-
0.1
2
-
0.4
+
0.3
-
0.1
17.5
+
1.5
-
1.0
Gate burr
Detector
center
Rugged resin
Rugged resin
g
Epoxy resin
1 Emitter
2 Collector
g
Resin type
Pale blue transparent epoxy resin
Black visible light cut-off epoxy resin
*
Tolerance :
±
0.2 mm
*
( ) : Reference dimensions
1.4mm
Soldering area
(Half intensity angle : ± 70° )
Model
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
s
s
s
s
PT4110/PT4110F
(Ta = 25°C)
Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector current
PT4110
I
C
V
CE
= 5V
E
e
= 1mW/cm
2
*2
4.0
-
25
mA
PT4110F
2.5
-
19
Dark current
I
CEO
-
-
1.0
Collector-emitter saturation voltage
V
CE(sat)
E
e
= 1mW/cm
2
I
C
= 2.5mA
*2
-
-
1.2
Collector-emitter breakdown voltage
CEO
BV
E
e
= 0
I
C
= 0.1mA
*2
35
-
-
V
Emitter-collector breakdown voltage
ECO
BV
I
E
= 0.01mA
E
e
= 0
*2
6
-
-
V
Peak sensitivity wavelength
PT4110
p
-
-
800
-
nm
PT4110F
-
860
-
Response time
Rise Time
t
r
R
L
= 100
-
60
-
µ
s
-
53
-
µ
s
Fall Time
t
f
Half intensity angle
-
± 70
-
°
-
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Fig. 2 Dark Current vs. Ambient Temperature
Dark current I
CEO
(A)
Ambient temperature Ta (°C )
Ambient temperature Ta (°C)
Collector power dissipation P
C
(mW)
V
CE
= 2V, I
C
= 10mA
E
e
= 0, V
CE
= 10V
mA
µ
A
V
- 25
0
25
50
75
100
0
10
20
30
40
50
60
70
80
85
- 25
0
25
50
75
100
10
-4
5
5
5
5
5
5
5
5
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
V
CE
= 10V
*2 E
e
: Irradiance by CIE standard light source A (tungsten)
s
PT4110/PT4110F
2
0
0
2
4
6
8
10
0
100
20
40
60
80
Ta = 25°C
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Relative collector current (%)
Ambient temperature Ta (°C)
V
CE
= 5V
Fig. 4-a Collector Current vs. Irradiance
(PT4110)
Collector current I
C
(mA)
- 25
0
25
50
75
100
50
75
100
125
150
175
10
- 1
2
5
1
0.5
1.0
2.0
5.0
Fig. 4-b Collector Current vs. Irradiance
(PT4110F)
Collector current I
C
(mA)
5
1
0.3
0.5
1.0
2.0
5.0
10.0
Irradiance E
e
(mW/cm
2
)
Fig. 5-a Collector Current vs.
Collector-Emitter voltage (PT4110)
5
10
15
20
25
30
35
0.1mW/cm
2
0.25mW/cm
2
0.5mW/cm
2
0.75mW/cm
2
P
C
(MAX)
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0
0
2
4
6
8
10
Ta = 25°C
5
10
15
20
25
30
35
0.1mW/cm
2
0.75mW/cm
2
P
C
(MAX)
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
Fig. 5-b Collector Current vs.
Collector-Emitter voltage (PT4110F)
0.25mW/cm
2
0.5mW/cm
2
Ta = 25°C
PT4110
PT4110F
400
500
600
700
800
900
1000
1100
Wavelength
(nm)
Relative sensitivity (%
)
Fig. 6 Spectral Sensitivity
E
e
= 1mW/cm
2
V
CE
=2V
Ta=25°C
Irradiance E
e
(mW/cm
2
)
V
CE
=2V
Ta=25°C
E
e
=
1mW/cm
2
10
-1
E
e
= 1mW/cm
2
Angular displacement
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
Relative output (%)
Fig. 7 Response Time vs. Load Resistance
Load resistance R
L
(
)
Test Circuit for Response Time
Fig. 8 Radiation Diagram
PT4110/PT4110F
20
- 10°
- 20°
0°
- 90°
- 80°
- 70°
- 60°
- 50°
- 40°
- 30°
1
10
100
5000
1000
V
CE
= 2V
I
C
= 10mA
T
a
= 25°C
100
1000
t
f
t
d
t
s
t
r
1
10
10
100
100
10
Fig. 9 PT4110 Relative Output vs. Distance
(Detector : GL4110)
V
CC
R
L
Output
t
r
t
d
10
%
t
f
t
s
90
%
Input
Output
40
180
160
140
120
80
60
0
100
Ta = 25°C
1
0.1
0.01
0.1
Response time (
µ
s)
10°
20°
(Ta = 25°C)
Distance between emitter and detector d (mm)
30°
40°
50°
60°
70°
80°
90°
Relative radiant intensity (%)
q
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