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Part Number LT135A

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shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.
s
Features
¡Small temperature coefficient of the Hall voltage
¡Good linearity of the Hall voltage
¡Small imbalanced voltage
¡Directly DC voltage applicable
s
Applications
¡Brushless motors
VCR, CD, CD-ROM, FDD
¡Measuring equipment
Gauss meters, magnetic substance detectors
¡Noncontact sensors
Microswitches, tape-end detection
¡Other magnetic detection
s
Outline Dimensions
(Unit : mm)
Hall Voltage 240mV GaAs Hall Device
LT135A
LT135A
Hall Device
2.7±0.3
1.5±0.2
1
2
4
3
0.6
0.4
0.4
0.4
1.9
2.9±0.2
(0.85)
(0.95)
2.9±0.2
4-R0.2
N
0.6
0.6
0.3
0.8
(0to0.15)
0.16
+0.10
-0.06
1.1
+0.2
-0.1
Terminal connection
1:V
C
Input
2:V
H
Output
3:V
C
Input
4:V
H
Output
As for dimensions of tape-packaged products, refer to page 44 .
Control voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature
*1
Symbol
V
C
P
D
T
opr
T
stg
T
sol
Rating
12
150
-20 to +125
-55 to +150
260
Unit
V
mW
°C
°C
°C
Parameter
*1 Soldering time : 10 seconds
s
Absolute Maximum Ratings
(T
a
=25°C)
Control current
I
C
15
mA
s
Electrical Characteristics
(T
a
=25°C)
No-load Hall voltage
*1
Imbalanced voltage
*2
Input resistance
Output resistance
Drift of imbalanced voltage vs. temperature
Temperature coefficient of Hall voltage
Temperature coefficient of input resistance
Linearity of Hall voltage
Symbol
V
H
V
HO
R
IN
R
OUT
|
V
HO
|
Conditions
V
C
=6V, B=100mT
V
C
=6V, B=0mT
I
M
=1mA, B=0mT
I
M
=1mA, B=0mT
V
C
=6V, B=0mT, T
a
=-20°C to 25°C
V
C
=6V, B=0mT, T
a
=25°C to 125°C
I
C
=6mA, B=100mT, T
1
=-20°C, T
2
=125°C
I
M
=1mA, B=0mT, T
1
=-20°C, T
2
=125°C
I
C
=6mA, B
1
=50mT, B
2
=100mT
MIN
200
-15
650
1 300
-
-
-
-
TYP.
240
-
800
1 600
5
-0.03
0.2
2
MAX.
280
15
950
1 900
-
-
-
-
Unit
mV
mV

mV
%/°C
%/°C
%
Parameter
*1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20°C to + 125°C.
Keep the voltage within the allowable power dissipation range.
*2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V.
V
H
=V
M
-V
HO
V
M
:Observed Hall voltage
V
HO
:Imbalanced voltage
K
H
:Sensitivity
=
=
1
V
H
(T
1
)
X
X
100
{V
H
(T
2
)-V
H
(T
1
)}
(T
2
-T
1
)
X
X
100
1
R
IN
(T
1
)
{R
IN
(T
2
)-R
IN
(T
1
)}
(T
2
-T
1
)
X
2
X
100,
=
{K
H
(B
2
)-K
H
(B
1
)}
{K
H
(B
1
)+K
H
(B
2
)}
K
H
=
V
H
(I
C
X
B)
Fig. 1 Hall Voltage vs. Ambient
Temperature
Fig. 2 Input Resistance vs. Ambient
Temperature
Fig. 6 Power Dissipation vs. Ambient
Temperature
Fig. 5 Hall Voltage vs. Control Voltage
Fig. 3 Hall Voltage vs. Magnetic Flux
Density
Fig. 4 Hall Voltage vs. Control Current
LT135A
Hall Device
V
C
=6V
T
a
=25°C
0
0
500
400
100
200
300
600
1 600
1 400
1 000
1 200
600
400
800
200
Hall voltage V
H
(mV)
Magnetic flux density B (mT)
B=100mT
T
a
=25°C
0
0
8
4
12
600
400
300
200
100
Hall voltage V
H
(mV)
Control current I
C
(mA)
B=100mT
0
-20
0
80
40
120
300
250
200
150
100
50
Hall voltage V
H
(mV)
Ambient temperature T
a
(°C)
V
C
=6V
I
C
=6mA
0
0
80
40
120
160
200
200
160
120
80
40
Power dissipation P
D
(mW)
Ambient temperature T
a
(°C)
B=0mT
I
M
=1mA
0
-20
0
80
40
120
2 000
1 600
1 200
800
400
Input resistance R
IN
(
)
Ambient temperature T
a
(°C)
B=100mT
T
a
=25°C
0
0
8
10
2
4
6
12
600
400
500
200
300
100
Hall voltage V
H
(mV)
Control voltage V
C
(V)