Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
30
V
I
D
Continuous Drain Current(@T
C
= 25
°C)
60
A
Continuous Drain Current(@T
C
= 100
°C)
43
A
I
DM
Drain Current Pulsed
(Note 1)
240
A
V
GS
Gate to Source Voltage
±
20
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
P
D
Total Power Dissipation(@T
A
= 25 °C) *
3.75
W
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
100
W
0.67
W/°C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
°C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JC
Thermal Resistance, Junction-to-Case
-
-
1.50
°C/W
R
JA
Thermal Resistance, Junction-to-Ambient *
-
-
40
°C/W
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
SFB60N03L
September, 2002. Rev. 0.
1/7
Features
Low R
DS
(on) (0.0135 )@V
GS
=10V
Low Gate Charge (Typical 21.5nC)
Low Crss (Typical 130pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)
General Description
This Power MOSFET is produced using SemiWell's advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
SemiWell
Semiconductor
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Logic N-Channel MOSFET
Symbol
2. Drain
3. Source
1. Gate
D
2
-PACK (TO-263)
1
2
3
* When mounted on the minimum pad size recommended (PCB Mount)
SFB60N03L
Electrical Characteristics
( T
C
= 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
30
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature coef-
ficient
I
D
= 250uA, referenced to 25 °C
-
0.02
-
V/°C
I
DSS
Drain-Source Leakage Current
V
DS
= 30V, V
GS
= 0V
-
-
1
uA
V
DS
= 24V, T
C
= 150 °C
-
-
10
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
100
nA
Gate-Source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
1.0
-
3.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
V
GS
= 10 V, I
D
= 30A
V
GS
= 5 V, I
D
= 30A
-
-
0.011
0.015
0.0135
0.019
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
1010
1320
pF
C
oss
Output Capacitance
-
450
585
C
rss
Reverse Transfer Capacitance
-
130
170
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=15V, I
D
=30A, R
G
=50
see fig. 13.
(Note 4, 5)
-
20
50
ns
t
r
Rise Time
-
55
120
t
d(off)
Turn-off Delay Time
-
53
116
t
f
Fall Time
-
75
160
Q
g
Total Gate Charge
V
DS
=24V, V
GS
=5V, I
D
=60A
see fig. 12.
(Note 4, 5)
-
21.5
28
nC
Q
gs
Gate-Source Charge
-
3.6
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
10.7
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
60
A
I
SM
Pulsed Source Current
-
-
240
V
SD
Diode Forward Voltage
I
S
=60A, V
GS
=0V
-
-
1.5
V
t
rr
Reverse Recovery Time
I
S
=60A,V
GS
=0V,dI
F
/dt=100A/us
-
40
-
ns
Q
rr
Reverse Recovery Charge
-
35
-
nC
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 75uH, I
AS
=60A, V
DD
= 15V, R
G
= 0 , Starting T
J
= 25°C
3. ISD 60A, di/dt 300A/us, V
DD
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
2/7
0
2
4
6
8
10
10
0
10
1
10
2
175
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 15V
2. 250µ s Pulse Test
I
D
,
Dr
ain
Cu
rr
e
n
t
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
I
D
,
Dr
ai
n Current
[A
]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
35
0
500
1000
1500
2000
2500
C
rss
C
oss
C
iss
Notes :
1. V
GS
= 0V
2. f=1MHz
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
C
a
pa
c
i
ta
nc
e
[pF
]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V
DS
= 15V
V
DS
= 24V
Note : I
D
= 60.0 A
V
GS
,
Gate-S
ource V
o
ltag
e [V]
Q
g
, Total Gate Charge [nC]
0
40
80
120
160
200
240
0
10
20
30
40
V
GS
= 5V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
,
D
r
ai
n-S
o
urce
O
n
-Re
s
istan
c
e[m
]
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
175
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
25
I
DR
, Re
v
e
rse
Drain
C
u
rrent[
A
]
V
SD
, Source-Drain voltage[V]
3/7
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Capacitance Characteristics
( Non-Repetitive )
Fig 6. Gate Charge Characteristics
SFB60N03L
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= 10 V
2. I
D
= 30 A
R
DS
(O
N)
,
(
N
or
mal
i
zed)
Dr
ain
-
S
our
c
e
O
n
-
R
es
is
t
anc
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µ A
BV
DS
S
, (
N
or
m
a
l
i
z
e
d
)
D
r
ain-
So
urce Br
eak
dow
n Volt
ag
e
T
J
, Junction Temperature [
o
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
JC
(t) = 1 .5
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
JC
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t
)
,
T
h
e
r
m
a
l Re
spon
se
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
I
D
, Drain
C
u
rrent [
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
I
D'
D
r
ai
n Current
[
A
]
T
C'
Case Temperature [
o
C]
Fig 11. Transient Thermal Response Curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
SFB60N03L
4/7
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current
vs. Case Temperature
5/7
Fig 13. Switching Time Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
SFB60N03L
Fig. 12. Gate Charge Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
E
AS
=
L
L
I
AS
2
----
2
1
E
AS
=
L
L
I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
Charge
V
GS
5 V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
V
Q
g
Q
gs
Q
gd
Charge
V
GS
V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
5 V
Q
g
Q
gs
Q
gd
Charge
V
GS
5 V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
V
Q
g
Q
gs
Q
gd
Charge
V
GS
V
Q
g
Q
gs
Q
gd
1mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
5 V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
5 V
V
DS
R
L
DUT
Pulse
Generator
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
in
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
( 0.5 rated V
DS
)
V
V
DS
R
L
DUT
Pulse
Generator
R
G
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