Type 2N3811
Geometry
0220
Polarity PNP
Qual Level: JAN - JANS
Data Sheet No. 2N3811
Generic Part Number:
2N3810
REF: MIL-PRF-19500/336
Features:
ˇ
Two electrically isolated, matched
PNP transistors as one dual unit.
ˇ
Housed in
TO-78
case.
ˇ
Also available in chip form using
the
0220
chip geometry.
ˇ
The Min and Max limits shown are
per
MIL-PRF-19500/336
which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter voltage V
CEO
60 V
Collector-Base Voltage V
CBO
60 V
Emitter-Base voltage V
EBO
5.0 V
Collector Current, Continuous I
C
50 mA
Power Dissipation, T
A
= 25
o
C, one section 0.5 W
Derate above 25
o
C 2.86 mW/
o
C
Power Dissipation, T
A
= 25
o
C, two sections 0.6 W
Derate above 25
o
C 3.43 mW/
o
C
Operating Junction Temperature T
J
-65 to +200
o
C
Storage Temperature T
STG
-65 to +200
o
C
P
T
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
TO-78
Data Sheet No. 2N3811
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 ľA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
C
= 10 ľA
Collector-Base Cutoff Current
V
CB
= 50 V
Collector-Base Cutoff Current
V
CB
= 50 V, T
A
= +150
o
C
Collector-Base Cuttoff Current
V
CE
= 50 V, IC = 1 ľA
I
CBO2
---
10
ľA
I
EBO
---
10
nA
I
CBO1
---
10
nA
V
V
(BR)EBO
5.0
---
V
(BR)CEO
60
---
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
60
---
V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 1 ľA, V
CE
= 5 V
h
FE1
75
---
---
I
C
= 10 ľA, V
CE
= 5 V
h
FE2
225
---
---
I
C
= 100 ľA, V
CE
= 5 V
h
FE3
300
900
---
I
C
= 500 ľA, V
CE
= 5 V
h
FE4
300
900
---
I
C
= 1 mA, V
CE
= 5 V
h
FE5
300
900
---
I
C
= 10 mA, V
CE
= 5 V
h
FE6
250
---
---
I
C
= 100 ľA, V
CE
= 5 V, T
A
= -55
o
C
h
FE7
100
---
---
Base-Emitter Saturation Voltage
I
C
= 100 ľA, I
B
= 10 ľA
V
BE(sat)1
---
0.7
V dc
I
C
= 1 mA, I
B
= 100 ľA
V
BE(sat)2
---
0.8
V dc
V
CE
= 5 V, I
C
= 100 ľA
V
BE(sat)3
---
0.7
V dc
Collector-Emitter Saturation Voltage
I
C
= 100 ľA, I
B
= 10 ľA
V
CE(sat)1
---
0.2
V dc
I
C
= 1 mA, I
B
= 100 ľA
V
CE(sat)2
---
0.25
V dc
Data Sheet No. 2N3811
Small Signal Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio (Gain Ratio)
V
CE
= 5 V, I
C
= 100 ľA
Base Emitter Value, Nonsaturated Absolute
Value of Differential, |V
BE1
- V
BE2
|
1
V
CE
= 5 V, I
C
= 10 ľA
---
5.0
mV
V
CE
= 5 V, I
C
= 100 ľA
---
3.0
mV
V
CE
= 5 V, I
C
= 10 mA
---
5.0
mV
Magnitude of Small-Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 500 ľA, f = 30 MHz
|h
FE
|
1
1.0
---
---
V
CE
= 5 V, I
C
= 1 mA, f = 100 MHz
|h
FE
|
2
1.0
5.0
---
Small-Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 10 V, IC = 1.0 mA, f = 1 kHz
Small-Signal, Short Circuit
Input Impedance
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Small-Signal, Open Circuit
Output Admittance
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Small-Signal, Open Circuit
Reverse Voltage Transfer Ratio
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Noise Figure
V
CE
= 10 V, I
C
= 100 ľA, R = 3 kO, f = 100 Hz
F1
---
4.0
dB
V
CE
= 10 V, I
C
= 100 ľA, R = 3 kO, f = 1 kHz
F2
---
1.5
dB
V
CE
= 10 V, I
C
= 100 ľA, R = 3 kO, f = 10 kHz
F3
---
2.0
dB
V
CE
= 10 V, I
C
= 100 ľA, R = 3 kO,
F4
---
2.5
dB
noise bandwidth 10 Hz to 15.7 kHz
Open Circuit, Output Capacitance
V
CB
= 5 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Short Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
C
OBO
---
5.0
pF
C
IBO
---
8.0
pF
h
re
---
25 x 10
-4
---
h
oe
5.0
60
ľohm
h
ie
3.0
40
kohm
---
h
FE
300
900
---
h
FE3-1
/ h
FE3-2
0.9
1.0
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