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Part Number SA9503

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Philips
Semiconductors
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
Objective specification
Supersedes data of 1999 Jul 06
1999 Jul 29
INTEGRATED CIRCUITS
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
2
1999 Jul 29
DESCRIPTION
The SA9503 is an integrated CDMA/AMPS low noise amplifier
(LNA) plus a downconverter, for both the 900 MHz Cellular band and
the 1.9 GHz PCS band. The LNA incorporates 5 settings of digitally
selected stepped gain in the Cellular band and in the PCS band.
One of the modes (high linearity mode) in each of the Cellular and
PCS bands, includes a high IP3 setting in order to meet the 1-tone
CDMA desensitization test. The gain, noise figure and IP3 for the
remaining 4 low current modes in the Cellular band, are designed in
order to have sufficient separation between the antenna power
levels at which the LNA gains are changed, based on multi-tone
interference levels. A 3 dB overlap is allowed in the antenna power
levels for the adjacent modes. Table 1 indicates a typical scenario.
The downconverter portion is based on our SA9502 and is designed
to meet all the stringent spurious rejections that are required in the
Cellular and PCS bands. There are three individual mixer blocks,
each optimized for high linearity with low power consumption for
operation in one of the following modes: 1900 MHz PCS CDMA,
800 MHz Cellular CDMA, or 800 MHz analog FM AMPS/TACS
modes.
The circuit has been designed in our advanced QUBiC3 BiCMOS
process with 30 GHz f
T
.
FEATURES
Versatile step gain LNA
Can meet single tone CDMA desensitization requirements
Can meet CDMA two tone interference requirements
Cellular
PARAMETER
MODE
PARAMETER
CEL_L
CEL_1
CEL_2
CEL_3
CEL_4
Gain (dB)
17
15.5
9
3
ญ4
Noise figure (dB)
2
1.6
1.9
4.5
11
Input IP3 (dBm)
5.5
ญ2
ญ3.5
2
15
Current (mA)
13.2
4.9
4.9
4.9
3.7
PCS
PARAMETER
MODE
PARAMETER
PCS_L
PCS_1
PCS_2
PCS_3
PCS_4
Gain (dB)
15.2
14.3
8
2
ญ4.5
Noise figure (dB)
2.5
2
2.5
3.7
11.5
Input IP3 (dBm)
4.5
1
ญ2
ญ1
16
Current (mA)
13.3
5.9
5.9
5.9
3.7
Downconverter typical performance
PARAMETER
Cellular FM
Cellular CDMA
PCS CDMA
Gain (dB)
7.5
11.5
12.5
Noise Figure (dB)
10
9
9
Input IP3 (dBm)
5
3.5
4
Current (mA)
(Tx) LO output
buffer off
6.8
13
16
Separate, selectable IF outputs to suit FM and CDMA bandwidths
Buffered Cellular and PCS LO inputs
Integrated frequency doubler for PCS mixer LO
Differential (Tx) LO output buffer (can be switched on or off)
Low voltage operation down to 2.7 volts
Mixers current consumption with (Tx) LO buffer on:
Cellular FM: 16.8 mA
Cellular CDMA: 23 mA
PCS: 26 mA
Low standby current in sleep mode: <50
A
BCC32++
TM
package
APPLICATIONS
800 MHz analog FM and CDMA digital receivers
1900 MHz PCS band CDMA digital receivers
Supports dual-band and triple-mode operation
Digital mobile communications equipment
Portable, low power radio equipment
BCC32++ is a trademark of Fujitsu Microelectronics.
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
3
BLOCK DIAGRAM
2
2
CELLULAR
PCS
RX BPF
Fo = 1960 MHz
BW = 60 MHz
2
PCS_IF
2
CDMA IF BPF
BW = 1.23MHz
2
2
2
2
2
1
LO_OUT
LO_ENABLE
CEL
LO_IN
V
CC
BIAS
CTRL
SA9503
1
FM_IF
FM IF BPF
BW = 30kHz
SR01935
MODE
SELECT
LOGIC
5
CDMA/FM
PCS/CELLULAR
S0
S1
S2
CEL_IN
RX BPF
Fo = 881.5MHz
BW = 25 MHz
CEL_OUT
PCS_IN
PCS_OUT
RF_PCS
RF_CEL
CDMA_IF
2
PCS IF BPF
BW = 1.23MHz
2
PCS
LO_IN
1
2
Figure 1.
SA9503 Block Diagram
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATINGS
UNIT
Supply voltage (V
CC
)
ญ0.3 to +3.6
V
Gain control voltage
+3.6
V
Logic input voltage
ญ0.3 to V
CC
+0.3
V
Maximum power input
+20
dBm
Power dissipation (T
amb
= 25
C)
800
mW
Storage temperature range
ญ65 to +150
C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply voltage (V
CC
)
2.7
2.85
3.3
V
Operating ambient temperature range (T
amb
)
ญ40
+85
C
Logic input signal levels
LOW level input voltage range (V
IL
)
At logic 0
ญ0.3
0.2V
CC
V
HIGH level input voltage range (V
IH
)
At logic 1
0.5V
CC
V
CC
+0.3
V
Input bias current (I
bias
)
At logic 1 or logic 0
ญ5
+5
A
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
4
FUNCTIONAL DESCRIPTION
Mode selection
The SA9503 has several modes of operation for which the selection
logic is defined in Tables 2 and 3. Different mode selections require
different portions of the circuit to be active. Modes from unlisted
combinations of logic pins are not permitted. The LNA and
downconverter together can be programmed to operate in the PCS
or cellular bands using the PCS/CEL logic input pin, and in CDMA or
FM modes using the CDMA/FM logic input pin.
The LNA can be set to four different gain values and one special
high linearity setting. Thus, the LNA can be programmed into five
different modes with associated gain, noise figure, and input IP3,
using the S0, S1, and S2 control lines. The whole circuit (LNAs and
mixers) is powered down when control lines S0 = 1, S1 = 0, and
S2 = 0. It is also possible to independently switch off the LNAs and
keep the mixers on, as shown in Table 3.
LNA
External components can be used to match the LNA inputs, and if
required, the outputs, for the Cellular and PCS bands. The input and
output return loss of better than 10 dB can be achieved in all modes.
For Cellular band FM, only the CEL_1 mode is required for the LNA.
For CDMA, LNA modes CEL_1 and PCS_1 are used for normal
operation, as they have the highest gains and lowest noise figures.
For higher levels of multi-tone interference, other modes with lower
gains are to be used. The high linearity CEL_L and PCS_L modes
are used when there is a very strong adjacent channel interference,
while at the same time the mobile is transmitting close to its full
power. The high linearity is required in order to reduce the cross
modulation of the LNA from the mobile's transmitter, in the presence
of strong adjacent channel interferer. The maximum transmitter
power leakage which can be tolerated at the LNA input is
approximately ญ30dBm to meet the single tone desensitization
requirements. The cross modulation power can be derived from:
Cellular band: (2
P
TX
+ P
JAMMER
ญ 8) dBm
PCS band:
(2
P
TX
+ P
JAMMER
ญ 10.5) dBm
The LNA requires less than one hundred microseconds to settle
when it changes from one mode to another. This is expected to have
insignificant impact on the CDMA frame error rate.
Downconverter
The SA9503 has three mixers, one for Cellular FM, one for Cellular
CDMA, and one for PCS CDMA. Each one is individually optimized
for their specific requirements. The Cellular CDMA and FM mixers
have a common single-ended RF input.
The PCS mixer's RF input port is differential, and requires an
external balun when used with a single-ended source. Both the PCS
and the Cellular mixer RF inputs should be AC coupled.
Local oscillator drive for the mixers is provided through pins
CEL LO_IN and/or PCS LO_IN. The local oscillator inputs are
single-ended, AC-coupled. The CEL LO_IN signal is internally
buffered to drive the following:
ญ (Tx) LO output buffer,
ญ cellular FM mixer,
ญ cellular CDMA mixer,
ญ PCS LO frequency doubler.
In the PCS mode, mixer LO drive can be either direct (PCS LO_IN)
or through the frequency doubler after CEL LO_IN. The mixer local
oscillator signal is made available externally via the (Tx) LO output
buffer for potential use elsewhere in the radio. For example, this
signal typically can be used with the transmitter circuitry. The
(Tx) LO output buffer can be powered down independently, using
the (Tx) LO_ENABLE logic input. The (Tx) LO output buffer has
open collector differential outputs which are internally biased to
V
CC
2 supply rail.
The PCS and Cellular CDMA mixers have open collector differential
IF outputs. The two IF outputs can either supply two separate IF
filters, or they can be connected together externally for use with one
common receive IF filter. The differential IF outputs must be biased
at the supply voltage through external inductors that may also be
part of the matching circuit to the SAW filter. The cellular band FM
mixer also has a differential open collector IF output.
Table 1.
Typical Cellular Mode LNA Gain Change Points for 2-tone CDMA Interference Test
มมมมมมมม
มมมมมมมม
GAIN, dB
มมมมมมมมมมมมมมม
มมมมมมมมมมมมมมม
MAXIMUM ANTENNA IN-BAND POWER, dBm
มมมมมมมมมมมมม
มมมมมมมมมมมมม
MINIMUM ANTENNA IN-BAND POWER, dBm
มมมมมมมม
มมมมมมมม
16.5
มมมมมมมมมมมมมมม
มมมมมมมมมมมมมมม
ญ95
มมมมมมมมมมมมม
มมมมมมมมมมมมม
< ญ104
มมมมมมมม
มมมมมมมม
9
มมมมมมมมมมมมมมม
มมมมมมมมมมมมมมม
ญ90.5
มมมมมมมมมมมมม
มมมมมมมมมมมมม
ญ98.5
มมมมมมมม
มมมมมมมม
3
มมมมมมมมมมมมมมม
มมมมมมมมมมมมมมม
ญ86.7
มมมมมมมมมมมมม
มมมมมมมมมมมมม
ญ93.5
มมมมมมมม
มมมมมมมม
ญ3
มมมมมมมมมมมมมมม
มมมมมมมมมมมมมมม
> ญ79
มมมมมมมมมมมมม
มมมมมมมมมมมมม
ญ89.7
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
5
MODE SELECT LOGIC AND DC CHARACTERISTICS
The SA9503 chip has several modes of operation for which the selection logic is defined in the following two tables. Different mode selections
require different portions of the circuit to be active. Modes from unlisted combinations of logic pins, are not valid. Total current consumption of
the device is the sum of the currents for the mixer portion (Table 2) and the LNA portion (Table 3).
Table 2.
Mode logic definition for Downconverter mixers
V
CC
= 2.7 V to 3.3 V, 2.85 V typical; T
amb
= ญ40 to +85
C
(Tx) LO
(Tx) LO
LOGIC INPUT PINS
CURRENT (mA)
MODES
(Tx) LO
BUFFER
(
)
BUFFER
OUTPUT
DOUBLER
POWER
DOWN
1
PCS/CEL
CDMA/FM
LO DOUBLER
(Tx) LO
ENABLE
TYP
MAX
PCS
1
PCS1
On
2 GHz
Off
1
1
0
1
26
29.9
2
PCS1 Idle
Off
--
Off
1
1
0
0
16
18.4
3
PCS2
On
2 GHz
On
1
1
1
1
30
34.5
4
PCS2 Idle
Off
--
On
1
1
1
0
20
23
Cellular CDMA
5
CDMA
On
1 GHz
Off
1
0
1
1
23
26.5
6
CDMA Idle
Off
--
Off
1
0
1
0
13
15
7
FM
On
1 GHz
Off
1
0
0
1
16.8
19.3
8
FM Idle
Off
--
Off
1
0
0
0
6.8
7.8
Power Down
9
Sleep
1
x
x
Off
0
x
x
x
1
A
50
A
NOTES:
x = Don't care
1. The device will be in the Power Down mode (sleep) when control lines S0 = 1, S1 = 0, and S2 = 0.
Table 3.
Mode logic definition for LNA
V
CC
= 2.7 V to 3.3 V, 2.85 V typical; T
amb
= ญ40 to +85
C
MODES
LOGIC INPUTS
CURRENT CONSUMPTION (mA)
MODES
PCS/CEL
S0
S1
S2
TYP
MAX
1
CEL_L (High linearity)
0
1
1
1
13.2
15.0
2
CEL_1 (High gain)
0
0
1
1
4.9
6.0
3
CEL_2 (Next lower gain)
0
0
1
0
4.9
6.0
4
CEL_3 (Next lower gain)
0
0
0
1
4.9
6.0
5
CEL_4 (Next lower gain)
0
0
0
0
3.7
4.5
6
PCS_L (High linearity)
1
1
1
1
13.3
15.0
7
PCS_1 (High gain)
1
0
1
1
5.9
7.2
8
PCS_2 (Lower gain)
1
0
1
0
5.9
7.2
9
PCS_3 (Next lower gain)
1
0
0
1
5.9
7.2
10
PCS_4 (Next lower gain)
1
0
0
0
3.7
4.5
11
Mixers ON (LNA portion OFF)
x
1
1
0
1
A
50
A
12
Reserved (Sleep)
x
1
0
1
(Note 1)
(Note 1)
13
Sleep
x
1
0
0
(Note 1)
(Note 1)
NOTES:
x = Don't care
1. The device will be in the Power Down mode (sleep) when control lines S0 = 1, S1 = 0, and S2 = 0.
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
6
LNA
AC ELECTRICAL CHARACTERISTICS
V
CC
= 2.7 V to 3.3 V; T
amb
= 25
C
LIMITS
PARAMETER
TEST CONDITIONS
MIN
ญ3
TYP
+3
MAX
UNIT
Cellular Band LNA
RF input frequency range
869
894
MHz
S11
50
with external matching
ญ10
dB
S22
50
with external matching
ญ15
dB
Basic Gain Spread,
Gc
Common to all cellular modes
ญ1
0
1
dB
CEL_L Mode
Gain, S21
17 +
Gc
dB
Noise Figure
2.0
2.5
dB
Input IP3
2 tones of ญ30 dBm each,
f=800 kHz
4
5.5
dBm
2 tones of ญ30 dBm each,
f=60 kHz
1
2
dBm
S12
ญ40
dB
CEL_1 Mode
Gain, S21
15.5 +
Gc
dB
Noise Figure
1.6
1.9
dB
Input IP3
2 tones of ญ30 dBm each,
f=800 kHz
ญ3
ญ2
dBm
2 tones of ญ30 dBm each,
f=60 kHz
ญ7
ญ6
dBm
S12
ญ40
dB
CEL_2 Mode
Nominal Gain, S21
9 +
Gc
dB
Additional Gain spread
Relative to nominal gain
ญ2
2
Noise Figure
1.9
2.2
dB
Input IP3
2 tones of ญ30 dBm each,
f=800 kHz
ญ4.5
ญ3.5
dBm
S12
ญ40
dB
CEL_3 Mode
Nominal Gain, S21
3 +
Gc
dB
Additional Gain spread
Relative to nominal gain
ญ2
2
Noise Figure
4.5
5.5
dB
Input IP3
2 tones of ญ30 dBm each,
f=800 kHz
1
2
dBm
S12
ญ40
dB
CEL_4 Mode
Nominal Gain, S21
ญ4 +
Gc
dB
Additional Gain spread
Relative to nominal gain
ญ2
2
Noise Figure
11
11.5
dB
Input IP3
2 tones of ญ20 dBm each,
f=800 kHz
14
15
dBm
S12
ญ33
dB
LO (input and output) to LNA
input isolation
LO single-ended in, differential out, with
and without doubler. 0 dBm LO in, (Tx) LO
buffer ON, when in active modes. External
C ll l
d PCS fil
d
i h
40
dB
All modes
Cellular and PCS filters connected, with
30 dB LO rejection from them.
Settling time
Change of mode
100
s
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
7
PARAMETER
UNIT
LIMITS
TEST CONDITIONS
PARAMETER
UNIT
MAX
+3
TYP
ญ3
MIN
TEST CONDITIONS
PCS Band LNA
RF input frequency range
1810
1990
MHz
S11
50
with external matching
ญ9
dB
S22
50
with external matching
ญ12
dB
Basic Gain Spread,
Gp
Common to all PCS modes
ญ1
0
1
dB
PCS_L Mode
Gain, S21
15.2 +
Gp
dB
Noise Figure
2.5
3
dB
Input IP3
2ญtones of ญ30 dBm each.
f=800 kHz
3.5
4.5
dBm
S12
ญ40
dB
PCS_1 Mode
Gain, S21
14.3+
Gp
dB
Noise Figure
2.0
2.4
dB
Input IP3
2ญtones of ญ30 dBm each.
f=800 kHz
0
1
dBm
S12
ญ40
dB
PCS_2 Mode
Nominal Gain, S21
8 +
Gp
dB
Additional Gain spread
Relative to nominal gain
ญ2
2
Noise Figure
2.5
2.9
dB
Input IP3
2ญtones of ญ30 dBm each.
f=800 kHz
ญ3
ญ2
dBm
S12
ญ40
dB
PCS_3 Mode
Nominal Gain, S21
2 +
Gp
dB
Additional Gain spread
Relative to nominal gain
ญ2
2
Noise Figure
3.7
4.1
dB
Input IP3
2ญtones of ญ30 dBm each.
f=800 kHz
ญ2
ญ1
dBm
S12
ญ40
dB
PCS_4 Mode
Gain, S21
ญ4.5 +
Gp
dB
Additional Gain spread
Relative to nominal gain
ญ2
2
Noise Figure
11.5
12
dB
Input IP3
2ญtones of ญ20 dBm each.
f=800 kHz
16
dBm
S12
ญ30
dB
LO (input and Output) to LNA
input isolation.
LO single-ended in, differential out, with
and without doubler. 0 dBm LO in, (Tx) LO
buffer ON, when in active modes. External
36
dB
All modes.
,
Cellular and PCS filters connected, with
30 dB LO rejection from them.
Settling time
Change of mode
100
s
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
8
TYPICAL LNA SPECIFICATIONS WITH TEMPERATURE VARIATION AT ญ40
C AND +85
C
V
CC
= 2.7 V to 3.3 V
SPECIFICATION
CONDITIONS
TEMPERATURE
UNIT
SPECIFICATION
CONDITIONS
ญ40
C
0
C
+85
C
UNIT
Cellular band LNA
Supply current variation
All modes
ญ100
0
ญ100
A
CEL_L
0.7
0
ญ0.7
dB
CEL_1
1
0
ญ1
dB
Gain variation
CEL_2
1
0
ญ1
dB
CEL_3
0.8
0
ญ0.8
dB
CEL_4
0.6
0
ญ0.5
dB
CEL_L
ญ0.2
0
0.2
dB
CEL_1
ญ0.3
0
0.3
dB
Noise Figure variation
CEL_2
ญ0.4
0
0.4
dB
CEL_3
ญ0.7
0
0.7
dB
CEL_4
ญ1
0
0.7
dB
CEL_L
ญ1.4
0
0
dBm
CEL 1
f = 800 kHz
0.35
0
ญ0.25
dBm
Input IP3 variation
CEL_1
f = 60 kHz
ญ0.35
0
0.3
dBm
Input IP3 variation
CEL_2
0.25
0
0
dBm
CEL_3
0.75
0
ญ0.9
dBm
CEL_4
1
0
ญ1.2
dBm
PCS band LNA
Supply current variation
All modes
ญ40
0
ญ40
A
PCS_L
0.8
0
ญ0.8
dB
PCS_1
0.8
0
ญ1
dB
Gain variation
PCS_2
0.9
0
ญ0.8
dB
PCS_3
0.9
0
ญ0.8
dB
PCS_4
0.5
0
ญ0.5
dB
PCS_L
ญ0.3
0
0.3
dB
PCS_1
ญ0.4
0
0.4
dB
Noise Figure variation
PCS_2
ญ0.6
0
0.5
dB
PCS_3
ญ1
0
0.8
dB
PCS_4
ญ1
0
0.8
dB
PCS_L
0.4
0
ญ1
dBm
PCS_1
0.9
0
ญ1
dBm
Input IP3 variation
PCS_2
0.3
0
ญ0.7
dBm
PCS_3
0.7
0
ญ0.7
dBm
PCS_4
1.3
0
ญ0.4
dBm
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
9
DOWNCONVERTER
AC ELECTRICAL CHARACTERISTICS
V
CC
= 2.7 V to 3.3 V; T
amb
= 25
C, P
lo
= ญ3 dBm.
f
IF
= 130MHz, output differential load of 1k
for CDMA, and 850
for FM, as per application.
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
PARAMETER
TEST CONDITIONS
MIN
ญ3
s
TYP
+3
s
MAX
UNIT
Cellular Band Downconverter
RF input frequency range
869
894
MHz
LO input frequency range
950
1030
MHz
IF output frequency range (CDMA)
50
300
MHz
IF output frequency range (FM)
50
300
MHz
IF Output Load Impedance
CDMA, differential
1000
FM, Single-ended, with ext. balun
850
Conversion Gain
CDMA
10.5
11.5
12
dB
FM
6.5
7.5
8.0
dB
Noise Figure
CDMA mode, SSB
9.0
10.0
dB
FM mode, SSB
10
11
dB
Input IP3
CDMA mode
f
1
= 900 kHz,
f
2
= 1700 kHz
P1, P2 = ญ30 dBm
Tone spacing = 800 kHz
3.5
dBm
FM mode. P1, P2 = ญ24 dBm.
Tone spacing = 60 kHz, 330 kHz
5.0
dBm
RF Input Return Loss
Z
S
=50
with external matching
11.0
dB
LO Input Return Loss
Z
S
=50
10.0
dB
(Tx) LO Output Return Loss
Z
S
=100
differential
10
dB
LO Input Power Range
ญ9.0
ญ6.0
0.0
dBm
(Tx) LO Output Power Range
Z
L
=100
differential; (Tx) LO buffer ON.
ญ10.0
ญ6.0
ญ3.0
dBm
LO (Input and Output) to RF Leakage
CDMA
ญ35
dBm
FM
ญ30
dBm
LO (Input and Output) to IF Leakage
CDMA
ญ30
dBm
FM
ญ20
dBm
RF to LO (Input) Isolation
30
dB
RF to IF Isolation
Single-ended in, differential out
CDMA
17
dB
FM
10
dB
(Tx) LO Output to LO Input Isolation
30
dB
Leakage conversion gain
f1 = f
RX
40 MHz at LNA input.
P1 = ญ 70 dBm.
All LNA cellular modes.
Measured through conversion gain in
stop-band, without SAW filters being
connected. Pins terminated with resistive
equivalent load.
ญ40
dBc
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
10
AC ELECTRICAL CHARACTERISTICS (continued)
V
CC
= 2.7 V to 3.3 V; T
amb
= 25
C, P
lo
= ญ3 dBm.
f
IF
= 130MHz, output differential load of 1k
for PCS.
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
PARAMETER
TEST CONDITIONS
MIN
ญ3
s
TYP
+3
s
MAX
UNIT
PCS Downconverter
RF input frequency range
1810
1990
MHz
LO input frequency range
Without doubler
1720
2120
MHz
With doubler
860
1050
MHz
IF output frequency range
50
300
MHz
IF Output Load Impedance
Differential
1000
Conversion Gain
@ f
IF
, over RF/LO frequency ranges
11.5
12.5
13
dB
Noise Figure
@ f
IF
, over RF/LO frequency ranges, SSB
9.0
10
dB
Input IP3
@ f
IF
, over RF/LO frequency ranges
f
1
= 1.25 MHz,
f
2
= 2.05 MHz
P1, P2 = ญ30 dBm
Tone spacing = 800 kHz
3
4
dBm
RF Input Return Loss
Z
S
= 50
, with external matching
10
dB
LO Input Return Loss
Z
S
= 50
10
dB
(Tx) LO Output Return Loss
Z
S
= 100
differential
10
dB
LO Input Power Range
ญ9
ญ6
0
dBm
(Tx) LO Output Power Range
Z
L
= 100
differential; (Tx) LO buffer ON
ญ10
ญ9
ญ6
dBm
LO (Input and Output) to RF Leakage
With and without doubler
ญ35
dBm
LO (Input and Output) to IF Leakage
With and without doubler
ญ35
dBm
RF to LO (Input) Isolation
With and without doubler
30
dB
RF to IF Isolation
Single-ended in, differential out
20
dB
(Tx) LO Output to LO Input Isolation
Without doubler
30
dB
Leakage conversion gain
f1 = f
RX
80 MHz at LNA input.
P1 = ญ 70 dBm.
All LNA PCS modes.
Measured through conversion gain in
stop-band, without SAW filters being
connected.
Pins terminated with resistive equivalent load.
ญ40
dBc
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
11
TYPICAL DOWNCONVERTER SPECIFICATIONS WITH TEMPERATURE VARIATION FROM ญ40
C TO +85
C
V
CC
= 2.7 V to 3.3 V
SPECIFICATION
TEMPERATURE
UNIT
SPECIFICATION
ญ40
C
25
C
85
C
UNIT
Cellular Band
Conversion Gain Variation
1
0
ญ1
dB
IP3 Variation
FM
0
0
ญ1
dB
CDMA
0.5
0
ญ1
dB
Noise Figure Variation
FM
ญ1.5
0
0.8
dB
CDMA
ญ1.1
0
0.8
dB
PCS Band
Conversion Gain Variation
1
0
ญ1
dB
IP3 Variation
0.5
0
ญ1
dB
Noise Figure Variation
ญ1.4
0
0.8
dB
t.b.d.
Figure 2.
Typical Radio Architecture using SA9503
Table 4.
Typical S-Parameters
TBD
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
12
SR01943
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
81
7
18
19
20
21
22
23
24
GND1
RF_PCS
GND2
GND3
GND 4
GND5
RF_CEL
LO_ENABLE
CEL_OUT
S0
GND6
CEL_IN
PCS LO_IN
CEL LO_IN
Vcc2
LO_OUT
FM_IF
FM_IFB
CDMA_IF
CDMA_IFB
PCS_IF
PCS_IFB
PCS/CEL
PCS_IN
PCS_INB
S2
S1
PCS_OUT
GND7
CDMA/FM
LO_OUTB
Vcc1
Vcc
Vcc
Vcc
Vcc
Vcc
Vcc
Vcc
Vcc
LO BUFFER
CIRCUITRY
Vcc
SA9503
Figure 3.
Preliminary Demonstration Board Diagram
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
13
PINNING
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
17
18
19
20
21
22
23
24
GND1
RF_PCS
GND2
GND3
GND4
GND5
RF_CEL
LO_ENABLE
CEL_OUT
S0
GND6
CEL_IN
PCS LO_IN
CEL
LO_IN
Vcc2
LO_OUTB
FM_IF
FM_IFB
CDMA_IF
CDMA_IFB
PCS_IF
PCS_IFB
PCS/CEL
PCS_IN
PCS_INB
S2
S1
PCS_OUT
GND7
CDMA/FM
SR01936
V
CC
1
LO_OUT
LO BUFFER
CIRCUITRY
Figure 4.
Pin-Out Block Diagram
NOTE:
The ground plane/heatsink area of the BCC32++ package needs to
be soldered to ground for proper functioning of this device.
Table 5.
Pin function definition
PIN
NAME
DESCRIPTION
1
V
CC
1
Power supply
2
GND1
Ground
3
RF_PCS
PCS LNA input
4
GND2
Ground
5
GND3
Ground
6
GND4
Ground
7
GND5
Ground
8
RF_CEL
Cellular LNA input
9
LO_ENABLE
(Tx) LO buffer enable
10
CEL_OUT
Cellular LNA output
11
S0
Control signal S0
12
GND6
Ground
13
CEL_IN
Cellular RF mixer input
14
PCS LO_IN
PCS LO input
15
CEL LO_IN
Cellular LO input
16
V
CC
2
(Tx) LO buffer supply
17
LO_OUT
Non-inverting (Tx) LO output
18
LO_OUTB
Inverting (Tx) LO output
19
FM_IF
Non-inverting FM IF output
20
FM_IFB
Inverting FM IF output
21
CDMA_IF
Non-inverting CDMA IF output
22
CDMA_IFB
Inverting CDMA IF output
23
PCS_IF
Non-inverting PCS IF output
24
PCS_IFB
Inverting PCS IF output
25
PCS/CEL
PCS and cellular band select
26
PCS_IN
Non-inverting PCS RF mixer input
27
PCS_INB
Inverting PCS RF mixer input
28
S2
Control signal S2
29
S1
Control signal S1
30
PCS_OUT
PCS LNA output
31
GND7
Ground
32
CDMA/FM
CDMA and FM mode select
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
14
HBCC32:
plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
SOT560-1
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
15
NOTES
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
16
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088ญ3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1999
All rights reserved. Printed in U.S.A.
Date of release: 11-99
Document order number:
9397 750 06649
Philips
Semiconductors
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
[1]
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
Data sheet status
[1]
Please consult the most recently issued datasheet before initiating or completing a design.