Philips
Semiconductors
SA3604
PCS-band low voltage front-end
Preliminary specification
IC17 Data Handbook
1999 Dec 14
INTEGRATED CIRCUITS
Philips Semiconductors
Preliminary specification
SA3604
PCS-band low voltage front-end
2
1999 Dec 14
DESCRIPTION
The SA3604 is an integrated Low-Noise Amplifier (LNA) and mixer
designed in a 30 GHz f
T
advanced BICMOS process, Qubic3, for
high-performance, low power PCS-band communication systems.
The LNA has a 1.9 dB noise figure at 1960 MHz with 17.5 dB gain
and an IIP3 intercept of 4 dBm. The single-ended input, double
balanced mixer has a 9.5 dB noise figure with 8 dB gain and IIP3 of
+6.0 dBm at 1960 MHz.
FEATURES
·
Integrated LNA output matching
·
Excellent gain stability versus temperature and supply voltage
·
LNA, mixer and LO buffer power down capability
APPLICATIONS
·
IS-136 Standard systems
·
Wireless radios
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
16
15
14
13
12
11
MIXER IF OUT+
LNA GAIN Sel
GND
LNA RF OUT
MIXER RF IN
GND
MIXER IF OUT
V
CC
MIXER
LO OUT
GND
GND
LNA RF IN
V
CC
LNA
GND
V
CC
LO Buffer
LO IN
SR02104
Figure 1. Pin Configuration
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
16-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)
40 to +85
°
C
SA3604 DH
Philips Semiconductors
Preliminary specification
SA3604
PCS-band low voltage front-end
1999 Dec 14
3
PINOUT DEFINITION
1
2
3
4
5
6
7
8
9
10
16
15
14
13
12
11
MIXER IF OUT+
LNA GAIN Sel
GND
LNA RF OUT
MIXER RF IN
GND
MIXER IF OUT
V
CC
MIXER
LO OUT
GND
GND
LNA RF IN
V
CC
LNA
GND
V
CC
LO Buffer
LO IN
SR02108
Figure 2. Pinout definition
PIN DESCRIPTION
PIN NUMBER
SYMBOL
FUNCTION
1
LO_IN
VCO input
2
VCC LO BUFFER
LO buffer supply voltage
3
LO OUT
VCO output
4, 6, 8, 11, 13
GND
Ground
5
VCC LNA
LNA supply voltage
7
LNA RF IN
LNA input
9
LNA GAIN SEL
LNA gain select
10
LNA RF OUT
LNA output
12
MIXER RF IN
Mixer input
14
MIXER IF OUT+
Mixer output +
15
MIXER IF OUT
Mixer output
16
VCC MIXER
Mixer supply voltage
Philips Semiconductors
Preliminary specification
SA3604
PCS-band low voltage front-end
1999 Dec 14
4
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
1
0.3 to +3.5
V
V
IN
Voltage applied to any other pin
0.3 to (V
CC
+ 0.3)
V
P
D
Power dissipation, T
amb
= 25
°
C (still air)
2
16-Pin Plastic TSSOP
TBD
mW
T
JMAX
Maximum operating junction temperature
150
°
C
P
MAX
Maximum power input/output
+20
dBm
T
STG
Storage temperature range
65 to +150
°
C
NOTES:
1. Transients exceeding 3.6 V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
JA
: 16-Pin TSSOP
= TBD
°
C/W
3. Pins 14 and 15 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
2.7 to 3.3
V
T
amb
Operating ambient temperature range
40 to +85
°
C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +2.8 V, T
amb
= 25
°
C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LO buffer
6
mA
I
CC
Supply current
LNA high gain
6
mA
Mixer
12
mA
V
IH
Logic 1 level
2.0
V
CC
+ 0.3
V
V
IL
Logic 0 level
0.3
0.5
V
I
BIAS
Input bias current
Logic 1 or 0
5
+5
µ
A
Philips Semiconductors
Preliminary specification
SA3604
PCS-band low voltage front-end
1999 Dec 14
5
AC ELECTRICAL CHARACTERISTICS
V
CC
= +2.8 V; f
RF
= 1960 MHz, f
VCO
= 2070 MHz; T
amb
= 25
°
C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
3
TYP
+3
MAX.
UNITS
Overall System
G
SYS
System gain
LNA + Mixer (excluding filter
loss)
22
dB
Low Noise Amplifier
f
RF
RF input frequency range
1930
1990
MHz
S
21
Gain
17.5
dB
S
21
Gain in power-down mode
2
dB
S
12
Reverse isolation
@ 1960 MHz
TBD
dB
S
11
Input return loss
50
system
10
dB
S
22
Output return loss
50
system
10
dB
P
-1dB
Input 1 dB gain compression
19
dBm
IIP3
Input third order intercept
P
RFin
= 35 dBm, 60 kHz offset
4
dBm
NF
Noise figure
1.9
dB
t
ON/OFF
Turn on/off time
1
100
µ
s
Mixer
f
RF
RF input frequency range
1930
1990
MHz
f
IF
IF input frequency range
70
110
200
MHz
PG
C
Power conversion gain
f
IF
= 110 MHz
8
dB
S
11M
Input match
Ext. impedance matching req.
10
dB
NF
M
SSB noise figure
9.5
dB
P
-1dB
Input 1 dB gain compression
15
dBm
IIP3
M
Input third order intercept
P
RFin
= 27 dBm, 60 kHz offset
6
dBm
IIP
2INT
Input second order intercept
26
dBm
P
RFM-IF
RF feedthrough
P
RFin
= 35 dBm
TBD
dBm
t
ON/OFF
Turn on/off time
1
100
µ
s
LO Buffer
f
LO
Input frequency range
2000
2190
MHz
P
IN
Input power
2
0
+2
dBm
P
OUT
Output power
0
dBm
S
11
Input return loss
50
system
10
dB
S
22
Output return loss
50
system
10
dB
P
LO-IF
LO feedthrough to IF
TBD
dBm
P
LO-RFM
LO to mixer input feedthrough
TBD
dBm
P
LO-RF
LO to LNA input feedthrough
TBD
dBm
Harmonic content
20
dB
t
ON/OFF
Turn on/off time
1
100
µ
s
NOTE:
1. External circuit dependent
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