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Part Number KMZ52

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DATA SHEET
Product specification
2000 Jun 09
DISCRETE SEMICONDUCTORS
KMZ52
Magnetic Field Sensor
M3D396
2000 Jun 09
2
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
FEATURES
·
High sensitivity
·
Integrated compensation coil
·
Integrated set/reset coil.
APPLICATIONS
·
Navigation
·
Current and earth magnetic field measurement
·
Traffic detection.
DESCRIPTION
The KMZ52 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two magnetoresistive
Wheatstone bridges physically offset from one another by
90
°
and integrated compensation and set/reset coils. The
integrated compensation coils allow magnetic field
measurement with current feedback loops to generate
outputs that are independent of drift in sensitivity. The
orientation of sensitivity may be set or changed (flipped) by
means of the integrated set/reset coils. A short current
pulse should be applied to the compensation coils to
recover (set) the sensor after exposure to strong disturbing
magnetic fields. A negative current pulse will reset the
sensor to reversed sensitivity. By use of periodically
alternated flipping pulses and a lock-in amplifier, the
output is made independent of sensor and amplifier offset.
PINNING
SYMBOL
PIN
DESCRIPTION
+I
flip2
1
flip coil
V
CC2
2
bridge supply voltage
GND2
3
ground
+I
comp2
4
compensation coil
GND1
5
ground
+I
comp1
6
compensation coil
-
I
comp1
7
compensation coil
-
V
O1
8
bridge output voltage
+V
O1
9
bridge output voltage
-
I
flip1
10
flip coil
+I
flip1
11
flip coil
V
CC1
12
bridge supply voltage
-
I
comp2
13
compensation coil
-
V
O2
14
bridge output voltage
+V
O2
15
bridge output voltage
-
I
flip2
16
flip coil
handbook, halfpage
16
1
9
8
pin 1 index
MBL201
Fig.1 Simplified outline SOT109-1.
2000 Jun 09
3
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
QUICK REFERENCE DATA
Notes
1. The compensation coil generates a field H
comp
= A
comp
×
I
comp
in addition to the external field H
ext
. Sensor output will
become zero if H
ext
= H
comp
.
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see Chapter "Limiting values".
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
CC
bridge supply voltage
-
5
8
V
S
sensitivity (uncompensated)
12
16
-
V
offset
offset voltage per supply voltage
-
1.5
0
+1.5
mV/V
R
bridge
bridge resistance
1
2
3
k
R
comp
compensation coil resistance
100
170
300
A
comp
field factor of compensation coil; note 1
19
22
25
R
flip
resistance of set/reset coil
1
2
3
I
flip
recommended flipping current for stable operation; note 2
±
800
±
1000
±
1200 mA
t
flip
flip pulse duration; note 2
1
3
100
µ
s
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
bridge supply voltage
-
8
V
P
tot
total power dissipation
-
130
mW
T
stg
storage temperature
-
65
+150
°
C
T
amb
maximum operating temperature
-
40
-
125
°
C
I
comp
maximum compensation current
-
15
mA
I
flip (max)
maximum flipping current
-
1500
mA
P
flip (max)
maximum flipping power dissipation
-
50
mW
V
isol
voltage between isolated systems:
flip coil and Wheatstone bridge;
compensation coil and Wheatsone bridge;
flip coil and compensation coil
-
60
V
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
terminal resistance from junction to ambient
105
K/W
mV/V
kA/m
--------------
A/m
mA
----------
2000 Jun 09
4
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
CHARACTERISTICS
T
bridge
= 25
°
C; V
CC1
= V
CC2
= 5 V; unless otherwise specified.
Notes
1. Due to the ratiometric output, the same supply voltage (V
CC
) must be applied to both dice in one KMZ52 device.
2.
3. Bridge resistance die 1: between pins 5 and 12; bridge resistance die 2: between pins 2 and 3.
4.
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
bridge supply voltage
note 1
-
5
8
V
H
field strength operating range in sensor
plane
-
0.2
-
+0.2
kA/m
S
sensitivity
open circuit
12
16
-
TCS
temperature coefficient of sensitivity
T
s
=
-
25 to +125
°
C
-
0.31
-
%/K
k
SX
sensitivity synchronism
note 2
92
100
108
%
TCV
O
temperature coefficient of output voltage
V
CC
= 5 V;
T
bridge
=
-
25 to +125
°
C
-
-
0.4
-
%/K
R
bridge
bridge resistance
note 3
1
2
3
k
TCR
bridge
temperature coefficient of bridge
resistance
T
bridge
=
-
25 to +125
°
C;
note 4
-
0.3
-
%/K
V
offset
offset voltage per supply voltage
-
1.5
0
+1.5
mV/V
TCV
offset
temperature coefficient of offset voltage
T
bridge
=
-
25 to +125
°
C;
note 5
-
3
0
+3
FH
hysteresis of output voltage
-
-
2
%FS
R
comp
resistance of compensation coil
note 6
100
170
300
A
comp
field factor of compensation coil
19
22
25
R
flip
resistance of set/reset coil
note 7
1
2
3
TCR
flip
temperature coefficient of resistance of
set/reset coil
T
flip
=
-
25 to +125
°
C
-
0.39
-
%/K
I
flip
recommended flipping current for stable
operation
±
800
±
1000
±
1200 mA
t
flip
flip pulse duration
1
3
100
µ
s
R
isol
isolating resistance
note 8
1
-
-
M
V
isol
voltage between isolated systems
note 8
-
-
50
V
R
isol_dice
isolating resistance between dice
die 1 to die 2
1
-
-
M
f
operating frequency
0
-
1
MHz
angle die-to-die
note 9
88
90
92
deg
angle dice-to-package
note 9
-
5
0
+5
deg
mV/V
kA/m
--------------
µ
V/V
K
-------------
A/m
mA
----------
k
SX
100
A
comp1
S
1
×
A
comp2
S
2
×
------------------------------ %
×
=
TCR
bridge
100
=
R
bridge T
2
( )
R
bridge T
1
( )
­
R
bridge T
1
( )
T
2
T
1
­
(
)
---------------------------------------------------------------
Where T
1
25
°
C T
2
125
°
C
=
;
­
=
2000 Jun 09
5
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
5.
.
6. Resistance of compensation coil die 1: between pins 6 and 7;
resistance of compensation coil die 2: between pins 4 to 13.
7. Resistance of set/reset coil die 1: between pins 10 and 11;
resistance of set/reset coil die 2: between pins 1 to 16.
8. Isolating resistance die 1: pins 7 and 8, 7 and 10 and 8 to 10;
isolating resistance die 2: pins 1 to 2, 1 to 4 and 2 to 4.
9. Angle die-to-die: die 2 is turned by 90
±
2 degrees in anticlockwise direction with respect to die 1;
angle dice-to-package: both dice in their fixed die-to-die position are tilted towards the package edges by
0
±
5 degrees.
TCV
offset
V
offset T
2
( )
V
offset T
1
( )
­
T
2
T
1
­
(
)
---------------------------------------------------------
=
Where T
1
25
°
C T
2
125
°
C
=
;
­
=