DATA SHEET
Product specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17
1998 Mar 24
DISCRETE SEMICONDUCTORS
KMZ10A
Magnetic field sensor
handbook, halfpage
M3D329
1998 Mar 24
2
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10A
DESCRIPTION
The KMZ10A is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for navigation, current and field
measurement, revolution counters, angular or linear
position measurement and proximity detectors, etc.
PINNING
PIN
SYMBOL
DESCRIPTION
1
+V
O
output voltage
2
GND
ground
3
-
V
O
output voltage
4
V
CC
supply voltage
Fig.1 Simplified outline.
handbook, halfpage
MBA737
1 2 3 4
H y
H x
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
CC
bridge supply voltage
-
5
-
V
T
bridge
bridge operating temperature
-
40
-
+150
°
C
H
y
magnetic field strength
-
0.5
-
+0.5
kA/m
H
x
auxiliary field
-
0.5
-
kA/m
S
sensitivity
-
16
-
R
bridge
bridge resistance
0.8
-
1.6
k
V
offset
offset voltage
-
1.5
-
+1.5
mV/V
mV V
/
kA m
/
-----------------
CIRCUIT DIAGRAM
Fig.2 Simplified circuit diagram.
handbook, full pagewidth
MLC716
4
3
2
V
CC
1
+VO
VO
GND
1998 Mar 24
3
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Maximum operating temperature of the thin-film permalloy.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
bridge supply voltage
-
9
V
P
tot
total power dissipation
up to T
amb
= 134
°
C
-
90
mW
T
stg
storage temperature
note 1
-
65
+150
°
C
T
bridge
bridge operating temperature
-
40
+150
°
C
Fig.3 Power derating curve.
handbook, halfpage
0
150
100
50
0
50
100
150
MLC715
T ( C)
amb
o
P
(mW)
tot
1998 Mar 24
4
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10A
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
°
C; H
x
= 0.5 kA/m; notes 1 and 2; V
CC
= 5 V unless otherwise specified.
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
auxiliary field H
x
= 3 kA/m.
2. No disturbing field (H
d
) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
decrease of sensitivity.
3.
.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
180
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
H
y
magnetic field strength
note 2
-
0.5
-
+
0.5
kA/m
S
sensitivity
notes 2 and 3
13
-
19
TCV
O
temperature coefficient of
output voltage
V
CC
= 5 V;
T
amb
=
-
25 to +125
°
C
-
-
0.4
-
%/K
I
CC
= 3 mA;
T
amb
=
-
25 to +125
°
C
-
-
0.15
-
%/K
R
bridge
bridge resistance
0.8
-
1.6
k
TCR
bridge
temperature coefficient of
bridge resistance
T
bridge
=
-
25 to +125
°
C
-
0.25
-
%/K
V
offset
offset voltage
-
1.5
-
+1.5
mV/V
TCV
offset
offset voltage drift
T
bridge
=
-
25 to +125
°
C
-
6
-
+
6
FL
linearity deviation of output
voltage
H
y
= 0 to
±
0.25 kA/m
-
-
0.8
%
FS
H
y
= 0 to
±
0.4 kA/m
-
-
2.5
%
FS
H
y
= 0 to
±
0.5 kA/m
-
-
4.0
%
FS
FH
hysteresis of output voltage
-
-
0.5
%
FS
f
operating frequency
0
-
1
MHz
mV V
/
kA m
/
-----------------
µ
V V
/
K
---------------
S
V
O
at H
y
0.4 kA m
/
=
(
)
V
O
at H
y
0
=
(
)
0.4
V
CC
×
----------------------------------------------------------------------------------------------------------------
=
1998 Mar 24
5
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10A
Fig.4
Safe Operating Area (permissible disturbing
field H
d
as a component of auxiliary field H
x
).
handbook, halfpage
0
1
2
4
12
0
4
8
MLC119
3
Hd
(kA/m)
H (kA/m)
x
,,,,,
,,,,,
,,,,,
,,,,,
,,,,,
,,,,,
,,,,,
I
II
II
SOAR
H y
H x
H d
In applications with H
x
< 3 kA/m, the sensor has to be reset, after
leaving the SOAR, by an auxiliary field of H
x
= 3 kA/m.
I = Region of permissible operation.
II = Permissible extension if H
y
< 0.15 A/m.
Fig.5
Relative sensitivity (ratio of sensitivity at
certain H
x
and sensitivity at H
x
= 0.5 kA/m).
In applications with H
x
3 kA/m, the sensor has to be
reset by an auxiliary field of H
x
= 3 kA/m before using.
handbook, halfpage
0
5
1.2
0
0.4
0.8
MLC120
1
2
3
4
(H )
x
(0.5 kA/m)
H (kA/m)
x
S
S
Fig.6 Sensor output characteristics.
H
x
= 0.5 kA/m; T
amb
= 25
°
C; V
offset
= 0.
handbook, halfpage
0.5
0.5
12
12
4
8
0
4
8
MLC121
0
O
(mV/V)
H (kA/m)
y
V
max
typ
min
PDF 
ZIP