DATA SHEET
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 26
DISCRETE SEMICONDUCTORS
BFV469
NPN high-voltage transistor
alfpage
M3D100
1999 Apr 26
2
Philips Semiconductors
Product specification
NPN high-voltage transistor
BFV469
FEATURES
·
High transition frequency
·
Low feedback capacitance.
APPLICATIONS
·
Buffer transistor in monitors.
DESCRIPTION
NPN high-voltage transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
140
V
V
CEO
collector-emitter voltage
open base
-
100
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
100
mA
I
BM
peak base current
-
100
mA
P
tot
total power dissipation
T
amb
25
°
C; note 1
-
2
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 26
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
BFV469
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
R
th j-mb
thermal resistance from junction to mounting base
10
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 100 V
-
100
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
100
nA
h
FE
DC current gain
V
CE
= 10 V; see Fig.2
I
C
= 10 mA
150
-
I
C
= 50 mA
20
-
V
CEsat
collector-emitter saturation voltage
I
C
= 30 mA; I
B
= 5 mA
-
200
mV
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 25 V; f = 1 MHz
-
1.5
pF
f
T
transition frequency
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
150
-
MHz
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
hFE
400
300
100
200
MGD846
10
-
1
1
10
IC (mA)
10
2
V
CE
= 10 V.
1999 Apr 26
4
Philips Semiconductors
Product specification
NPN high-voltage transistor
BFV469
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e1
L
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.88
0.65
2.7
2.3
0.60
0.45
11.1
10.5
7.8
7.2
2.29
e
4.58
0.254
P
3.2
3.0
P1
3.9
3.6
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
16.5
15.3
1.5
0.9
L1
(1)
max
2.54
SOT32
TO-126
97-03-04
0
2.5
5 mm
scale
A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads
SOT32
D
P1
P
E
e1
A
L
Q
c
bp
1
2
3
L1
w
M
e
1999 Apr 26
5
Philips Semiconductors
Product specification
NPN high-voltage transistor
BFV469
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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