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Part Number NB4N855S

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Semiconductor Components Industries, LLC, 2005
June, 2005 - Rev. 0
1
Publication Order Number:
NB4N855S/D
NB4N855S
3.3 V, 1.5 Gb/s Dual
AnyLevelTM
to LVDS
Receiver/Driver/Buffer/
Translator
Description
NB4N855S is a clock or data Receiver/Driver/Buffer/Translator
capable of translating AnyLevel
TM
input signal (LVPECL, CML,
HSTL, LVDS, or LVTTL/LVCMOS) to LVDS. Depending on the
distance, noise immunity of the system design, and transmission line
media, this device will receive, drive or translate data or clock signals
up to 1.5 Gb/s or 1.0 GHz, respectively. This device is pin-for-pin
plug in compatible to the SY55855V in a 3.3 V applications.
The NB4N855S has a wide input common mode range of
GND + 50 mV to V
CC
- 50 mV. This feature is ideal for translating
differential or single-ended data or clock signals to 350 mV typical
LVDS output levels.
The device is offered in a small 10 lead MSOP package. NB4N855S
is targeted for data, wireless and telecom applications as well as high
speed logic interface where jitter and package size are main
requirements.
Application notes, models, and support documentation are available
at www.onsemi.com.
Features
·
Guaranteed Input Clock Frequency up to 1.0 GHz
·
Guaranteed Input Data Rate up to 1.5 Gb/s
·
490 ps Maximum Propagation Delay
·
1.0 ps Maximum RMS Jitter
·
180 ps Maximum Rise/Fall Times
·
Single Power Supply; V
CC
= 3.3 V
±10%
·
Temperature Compensated TIA/EIA-644 Compliant LVDS Outputs
·
GND + 50 mV to V
CC
- 50 mV V
CMR
Range
Figure 1. Typical Output Waveform at 1.5 Gb/s with K28.5
(V
INPP
= 100 mV, Input Signal DDJ = 24 ps)
Device DDJ = 7 ps
TIME (133 ps/div)
VOL
T
AGE
(50 mV/div)
A
= Assembly Location
Y
= Year
W
= Work Week
*For additional marking information, refer to
Application Note AND8002/D.
MARKING
DIAGRAM*
Micro 10
M SUFFIX
CASE 846B
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
Q0
Q0
Functional Block Diagram
D0
Q1
Q1
D0
D1
D1
1
10
1
855S
AYW
NB4N855S
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2
GND
V
CC
D0
Q0
Q0
Q1
Q1
D1
D1
5
6
7
8
10
9
1
2
3
4
D0
Figure 2. Pin Configuration and Block Diagram
(Top View)
Table 1. PIN DESCRIPTION
Pin
Name
I/O
Description
1
D0
LVPECL, CML, LVCMOS,
LVTTL, LVDS
Noninverted Differential Clock/Data D0 Input.
2
D0
LVPECL, CML, LVCMOS,
LVTTL, LVDS
Inverted Differential Clock/Data D0 Input.
3
D1
LVPEL, CML, LVDS LVCMOS,
LVTTL
Noninverted Differential Clock/Data D1 Input.
4
D1
LVPECL, CML, LVDS
LVCMOS LVTTL
Inverted Differential Clock/Data D1 Input.
5
GND
-
Ground. 0 V.
6
Q1
LVDS Output
Inverted Q1 output. Typically loaded with 100
W
receiver termination
resistor across differential pair.
7
Q1
LVDS Output
Noninverted Q1 output. Typically loaded with 100
W
receiver termination
resistor across differential pair.
8
Q0
LVDS Output
Inverted Q0 output. Typically loaded with 100
W
receiver termination
resistor across differential pair.
9
Q0
LVDS Output
Noninverted Q0 output. Typically loaded with 100
W
receiver termination
resistor across differential pair.
10
V
CC
-
Positive Supply Voltage.
NB4N855S
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3
Table 2. ATTRIBUTES
Characteristics
Value
Moisture Sensitivity (Note 1)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V-0 @ 0.125 in
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 2 kV
> 200 V
> 1 kV
Transistor Count
281
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
V
CC
Positive Power Supply
GND = 0 V
3.8
V
V
I
Positive Input
GND = 0 V
V
I
= V
CC
3.8
V
I
IN
Input Current Through R
T
(50
W
Resistor)
Static
Surge
35
70
mA
mA
I
OSC
Output Short Circuit Current
Line-to-Line (Q to Q)
Line-to-End (Q or Q to GND)
Q or Q to GND
Q to Q
Continuous
Continuous
12
24
mA
T
A
Operating Temperature Range
Micro 10
-40 to +85
°
C
T
stg
Storage Temperature Range
-65 to +150
°
C
q
JA
Thermal Resistance (Junction-to-Ambient) (Note 2)
0 lfpm
500 lfpm
Micro 10
Micro 10
177
132
°
C/W
°
C/W
q
JC
Thermal Resistance (Junction-to-Case)
1S2P (Note 4)
Micro 10
40
°
C/W
T
sol
Wave Solder
Pb
Pb-Free
<3 Sec @ 248
°
C
<3 Sec @ 260
°
C
265
265
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
2. JEDEC standard multilayer board - 1S2P (1 signal, 2 power).
NB4N855S
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4
Table 4. DC CHARACTERISTICS, CLOCK INPUTS, LVDS OUTPUTS
V
CC
= 3.0 V to 3.6 V, GND = 0 V, T
A
= -40
°
C to +85
°
C
Symbol
Characteristic
Min
Typ
Max
Unit
I
CC
Power Supply Current (Note 3)
40
53
mA
DIFFERENTIAL INPUTS DRIVEN SINGLE-ENDED (Figures 10 and 12)
V
th
Input Threshold Reference Voltage Range (Note 4)
GND +100
V
CC
- 100
mV
V
IH
Single-ended Input HIGH Voltage
V
th
+ 100
V
CC
mV
V
IL
Single-ended Input LOW Voltage
GND
V
th
- 100
mV
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (Figures 11 and 13)
V
IHD
Differential Input HIGH Voltage
100
V
CC
mV
V
ILD
Differential Input LOW Voltage
GND
V
CC
- 100
mV
V
CMR
Input Common Mode Range (Differential Configuration)
GND + 50
V
CC
- 50
mV
V
ID
Differential Input Voltage (V
IHD
- V
ILD
)
100
V
CC
mV
LVDS OUTPUTS (Note 5)
V
OD
Differential Output Voltage
250
450
mV
D
V
OD
Change in Magnitude of V
OD
for Complimentary Output States (Note 6)
0
1.0
25
mV
V
OS
Offset Voltage (Figure 9)
1125
1375
mV
D
V
OS
Change in Magnitude of V
OS
for Complimentary Output States (Note 6)
0
1.0
25
mV
V
OH
Output HIGH Voltage (Note 7)
1425
1600
mV
V
OL
Output LOW Voltage (Note 8)
900
1075
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Dx/Dx at the DC level within V
CMR
and output pins loaded with R
L
= 100
W
across differential.
4. V
th
is applied to the complementary input when operating in single-ended mode.
5. LVDS outputs require 100
W
receiver termination resistor between differential pair. See Figure 8.
6. Parameter guaranteed by design verification not tested in production.
7. V
OH
max = V
OS
max +
½
V
OD
max.
8. V
OL
max = V
OS
min -
½
V
OD
max.
NB4N855S
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5
Table 5. AC CHARACTERISTICS
V
CC
= 3.0 V to 3.6 V, GND
= 0 V; (Note 9)
Symbol
Characteristic
-40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
V
OUTPP
Output Voltage Amplitude (@ V
INPPMIN
)f
in
1.0 GHz
(Figure 3)
f
in
= 1.5 GHz
230
200
350
300
230
200
350
300
230
200
350
300
mV
f
DATA
Maximum Operating Data Rate
1.5
2.5
1.5
2.5
1.5
2.5
Gb/s
t
PLH
,
t
PHL
Differential Input to Differential Output
Propagation Delay
330
410
490
330
410
490
330
410
490
ps
t
SKEW
Duty Cycle Skew (Note 10)
Within -Device Skew (Note 11)
Device to Device Skew (Note 12)
8
10
20
45
35
100
8
10
20
45
35
100
8
10
20
45
35
100
ps
t
JITTER
RMS Random Clock Jitter (Note 13)
f
in
= 1.0 GHz
f
in
= 1.5 GHz
Deterministic Jitter (Note 14)
f
DATA
= 622 Mb/s
f
DATA
= 1.5 Gb/s
f
DATA
= 2.488 Gb/s
Crosstalk Induced Jitter (Note 15)
0.5
0.5
6
7
10
20
1
1
15
20
25
40
0.5
0.5
6
7
10
20
1
1
15
20
25
40
0.5
0.5
6
7
10
20
1
1
15
20
25
40
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 16)
100
V
CC
-
GND
100
V
CC
-
GND
100
V
CC
-
GND
mV
t
r
t
f
Output Rise/Fall Times @ 250 MHz
Q, Q
(20% - 80%)
50
110
180
50
110
180
50
110
180
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. Measured by forcing V
INPPMIN
with 50% duty cycle clock source and V
CC
- 1400 mV offset. All loading with an external R
L
= 100
W
across
"D" and "D" of the receiver. Input edge rates 150 ps (20%-80%).
10. See Figure 7 differential measurement of t
skew
= |t
PLH
- t
PHL
| for a nominal 50% differential clock input waveform @ 250 MHz.
11. The worst case condition between Q0/Q0 and Q1/Q1 from either D0/D0 or D1/D1, when both outputs have the same transition.
12. Skew is measured between outputs under identical transition @ 250 MHz.
13. RMS jitter with 50% Duty Cycle clock signal.
14. Deterministic jitter with input NRZ data at PRBS 2
23
-1 and K28.5.
15. Crosstalk Induced Jitter is the additive Deterministic jitter to channel one with channel two active both running at 622 Gb/s PRBS 2
23
-1 as
an asynchronous signals.
16. Input voltage swing is a single-ended measurement operating in differential mode.
INPUT CLOCK FREQUENCY (GHz)
Figure 3. Output Voltage Amplitude (V
OUTPP
) versus
Input Clock Frequency (f
in
) and Temperature (@ V
CC
= 3.3 V)
OUTPUT
VOL
T
AGE
AMPLITUDE
(mV)
0
50
100
150
200
250
300
350
400
0.5
1
1.5
2
2.5
3
0
85
°
C
-40
°
C
25
°
C
NB4N855S
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6
Figure 4. Typical Output Waveform at 1.5 Gb/s with 2
23-1
(V
INPP
= 100 mV (left) & V
INPP
= 400 mV (right), Input Signal DDJ = 24 ps)
Device DDJ = 6 ps
TIME (322 ps/div)
VOL
T
AGE
(50 mV/div)
Figure 5. Typical Output Waveform at 2.488 Gb/s with 2
23-1
(V
INPP
= 100 mV (left) & V
INPP
= 400 mV (right), Input Signal DDJ = 30 ps)
Device DDJ = 6 ps
TIME (322 ps/div)
VOL
T
AGE
(50 mV/div)
Device DDJ = 10 ps
TIME (80 ps/div)
VOL
T
AGE
(50 mV/div)
Device DDJ = 10 ps
TIME (80 ps/div)
VOL
T
AGE
(50 mV/div)
R
C
R
C
1.25 k
W
1.25 k
W
1.25 k
W
1.25 k
W
Dx
D
x
Figure 6. Input Structure
I
NB4N855S
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7
Figure 7. AC Reference Measurement
D
D
Q
Q
t
PHL
t
PLH
V
INPP
= V
IH
(D) - V
IL
(D)
V
OUTPP
= V
OH
(Q) - V
OL
(Q)
Figure 8. Typical LVDS Termination for Output Driver and Device Evaluation
Driver
Device
Receiver
Device
Q
D
Q
D
LVDS
100
W
LVDS
Z
o
= 50
W
Z
o
= 50
W
V
OL
Q
N
V
OH
Q
N
V
OS
V
OD
Figure 9. LVDS Output
Figure 10. Differential Input Driven
Single-Ended
D
Figure 11. Differential Inputs Driven
Differentially
D
V
th
V
th
D
D
V
IH
V
IL
V
IHmax
V
ILmax
V
IHmin
V
ILmin
V
CC
V
thmax
V
thmin
GND
V
th
Figure 12. V
th
Diagram
D
D
V
IL
V
IH(MAX)
V
IH
V
IL
V
IH
V
IL(MIN)
V
CMR
V
EE
Figure 13. V
CMR
Diagram
V
INPP
= V
IHD
- V
ILD
V
CC
NB4N855S
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8
ORDERING INFORMATION
Device
Package
Shipping
NB4N855SMR4
Micro 10
1000 / Tape & Reel
NB4N855SMR4G
Micro 10
(Pb-Free)
1000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NB4N855S
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9
PACKAGE DIMENSIONS
Micro10
CASE 846B-03
ISSUE D
S
B
M
0.08 (0.003)
A
S
T
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
2.90
3.10
0.114
0.122
B
2.90
3.10
0.114
0.122
C
0.95
1.10
0.037
0.043
D
0.20
0.30
0.008
0.012
G
0.50 BSC
0.020 BSC
H
0.05
0.15
0.002
0.006
J
0.10
0.21
0.004
0.008
K
4.75
5.05
0.187
0.199
L
0.40
0.70
0.016
0.028
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION "A" DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. DIMENSION "B" DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846B-01 OBSOLETE. NEW STANDARD
846B-02
-B-
-A-
D
K
G
PIN 1 ID
8 PL
0.038 (0.0015)
-T-
SEATING
PLANE
C
H
J
L
mm
inches
SCALE 8:1
10X
10X
8X
1.04
0.041
0.32
0.0126
5.28
0.208
4.24
0.167
3.20
0.126
0.50
0.0196
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NB4N855S
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10
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
NB4N855S/D
AnyLevel is a trademark of Semiconductor Components Industries, LLC.
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