Semiconductor Components Industries, LLC, 1999

October, 1999 Rev. 0.0

Publication Order Number:

MC74VHC1G07/D

MC74VHC1G07

Product Preview

Noninverting Buffer with

Open Drain Output

The MC74VHC1G07 is an advanced high speed CMOS buffer with

open drain output fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including a buffer

and an open drain output which provides the capability to set the
output switching level. This allows the MC74VHC1G07 to be used to
interface 5V circuits to circuits of any voltage between VCC and 7V
using an external resistor and power supply.

The MC74VHC1G07 input structure provides protection when

voltages up to 7V are applied, regardless of the supply voltage.

High Speed: tPD = 3.8ns (Typ) at VCC = 5V

Low Internal Power Dissipation: ICC = 2

A (Max) at TA = 25

Power Down Protection Provided on Inputs

Pin and Function Compatible with Other Standard Logic Families

Latchup Performance Exceeds 300mA

ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V

Figure 1. 5Lead SOT353 Pinout (Top View)

VCC

IN A

OUT Y

GND

LOGIC SYMBOL

IN A

OUT Y

OVT

This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.

SC88A / SOT353

DF SUFFIX

CASE 419A

PIN ASSIGNMENT

GND

IN A

http://onsemi.com

Pin 1

d = Date Code

V7d

VCC

OUT Y

FUNCTION TABLE

MARKING DIAGRAM

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

A Input

Y Output

MC74VHC1G07

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MAXIMUM RATINGS*

Characteristics

Symbol

Value

Unit

DC Supply Voltage

VCC

0.5 to +7.0

DC Input Voltage

VIN

0.5 to +7.0

DC Output Voltage

VOUT

0.5 to 7.0

Input Diode Current

IIK

Output Diode Current

(VOUT < GND; VOUT > VCC)

IOK

+20

DC Output Current, per Pin

IOUT

+25

DC Supply Current, VCC and GND

ICC

+50

Power dissipation in still air, SC88A

200

Lead temperature, 1 mm from case for 10 s

260

Storage temperature

Tstg

65 to +150

* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those

indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.

Derating -- SC88A Package: 3 mW/

C from 65

to 125

RECOMMENDED OPERATING CONDITIONS

Characteristics

Symbol

Min

Max

Unit

DC Supply Voltage

VCC

2.0

5.5

DC Input Voltage

VIN

0.0

5.5

DC Output Voltage

VOUT

0.0

7.0

Operating Temperature Range

+85

Input Rise and Fall Time

VCC = 3.3V

0.3V

VCC = 5.0V

0.5V

tr , tf

0
0

100

ns/V

MC74VHC1G07

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DC ELECTRICAL CHARACTERISTICS

VCC

TA = 25

125

Symbol

Parameter

Test Conditions

(V)

Min

Typ

Max

Min

Max

Min

Max

Unit

VIH

Minimum HighLevel
Input Voltage

2.0
3.0
4.5
5.5

1.5
2.1

3.15
3.85

1.5
2.1

3.15
3.85

1.5
2.1

3.15
3.85

VIL

Maximum LowLevel
Input Voltage

2.0
3.0
4.5
5.5

0.5
0.9

1.35
1.65

0.5
0.9

1.35
1.65

0.5
0.9

1.35
1.65

VOH

Minimum HighLevel
Output Voltage
VIN = VIH or VIL

VIN = VIH or VIL
IOH = 50

2.0
3.0
4.5

1.9
2.9
4.4

2.0
3.0
4.5

1.9
2.9
4.4

VIN = VIH or VIL
IOH = 4mA
IOH = 8mA

3.0
4.5

2.58
3.94

2.48
3.80

2.34
3.66

VOL

Maximum LowLevel
Output Voltage
VIN = VIH or VIL

VIN = VIH or VIL
IOL = 50

2.0
3.0
4.5

0.0
0.0
0.0

0.1
0.1
0.1

VIN = VIH or VIL
IOL = 4mA
IOL = 8mA

3.0
4.5

0.36
0.36

0.44
0.44

0.52
0.52

IIN

Maximum Input
Leakage Current

VIN = 5.5V or GND

0 to

5.5

0.1

1.0

ICC

Maximum Quiescent
Supply Current

VIN = VCC or GND

5.5

2.0

IOPD

Maximum Offstate
Leakage Current

VOUT = 5.5V

0.25

2.5

5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

AC ELECTRICAL CHARACTERISTICS

(Cload = 50 pF, Input tr = tf = 3.0ns)

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

TA = 25

ÎÎÎÎÎ

125

ÎÎ

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Parameter

ÎÎÎÎÎÎÎÎÎÎÎ

Test Conditions

ÎÎ

Min

ÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎ

Unit

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

tPZL

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

Maximum Output
Enable Time,
Input A to Y

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

VCC = 3.0

0.3V

CL = 15 pF

RL = 1K

CL = 50 pF

ÎÎ

ÎÎÎ

5.0
7.5

ÎÎÎ

7.1

10.6

ÎÎÎ

8.5

12.0

ÎÎÎ

10.0
14.5

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

Input A to Y

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

VCC = 5.0

0.5V

CL = 15 pF

RL = 1K

CL = 50 pF

ÎÎ

ÎÎÎ

3.8
5.3

ÎÎÎ

5.5
7.5

ÎÎÎ

6.5
8.5

ÎÎÎ

8.0

10.0

ÎÎ

ÎÎÎÎ

tPLZ

ÎÎÎÎÎÎ

Maximum Output
Di

bl Ti

ÎÎÎÎÎÎÎÎÎÎÎ

VCC = 3.0

0.3V, RL = 1K

, CL = 50 pF

ÎÎ

ÎÎÎ

7.5

ÎÎÎ

10.6

ÎÎÎ

12.0

ÎÎÎ

14.5

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

Disable Time

ÎÎÎÎÎÎÎÎÎÎÎ

VCC = 5.0

0.5V, RL = 1K

, CL = 50 pF

ÎÎ

ÎÎÎ

5.3

ÎÎÎ

7.5

ÎÎÎ

8.5

ÎÎÎ

10.0

ÎÎ

ÎÎÎÎ

CIN

ÎÎÎÎÎÎ

Maximum Input
Capacitance

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎ

ÎÎÎ

ÎÎ

Typical @ 25

C, VCC = 5.0V

CPD

Power Dissipation Capacitance (Note 1.)

1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR

)

= CPD

VCC

fin + ICC. CPD is used to determine the noload dynamic

power consumption; PD = CPD

VCC2

fin + ICC

VCC.

VCC 7V

Figure 2. Output Voltage Mismatch Application

OVT

VCC

MC74VHC1G07

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VCC

GND

50%

50% VCC

A or B

tPHL

tPLH

*Includes all probe and jig capacitance

CL*

TEST POINT

DEVICE

UNDER

TEST

OUTPUT

Figure 3. Switching Waveforms

Figure 4. Test Circuit

DEVICE ORDERING INFORMATION

Device Nomenclature

Device Order Number

Circuit

Indicator

Temp

Range

Identifier

Technology

Device

Function

Package

Suffix

Tape &

Reel

Suffix

Package

Type

Tape and Reel

Size

MC74VHC1G07DFT1

VHC1G

SC88A /
SOT353

7Inch/3000 Unit

PACKAGE DIMENSIONS

SC88A / SOT353

DF SUFFIX

5LEAD PACKAGE

CASE 419A01

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MM.

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

1.80

2.20

0.071

0.087

INCHES

1.15

1.35

0.045

0.053

0.80

1.10

0.031

0.043

0.10

0.30

0.004

0.012

0.65 BSC

0.026 BSC

0.10

0.004

0.10

0.25

0.004

0.010

0.10

0.30

0.004

0.012

0.20 REF

0.008 REF

2.00

2.20

0.079

0.087

0.30

0.40

0.012

0.016

0.2 (0.008)

5 PL

B

ÉÉ

0.5 mm (min)

0.4 mm (min)

0.65 mm

1.9 mm

MC74VHC1G07

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Figure 5. Carrier Tape Specifications

D1
FOR COMPONENTS

10 PITCHES
CUMULATIVE
TOLERANCE ON
TAPE

0.2 mm

(

0.008")

2.0 mm

1.2 mm

AND LARGER

CENTER LINES
OF CAVITY

EMBOSSMENT

USER DIRECTION OF FEED

SEE

NOTE 2

TOP

COVER

TAPE

SEE NOTE 2

FOR MACHINE REFERENCE

ONLY

INCLUDING DRAFT AND RADII

CONCENTRIC AROUND B0

R MIN.

TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS "R"
WITHOUT DAMAGE

BENDING RADIUS

*TOP COVER
TAPE THICKNESS (t1)
0.10 mm
(0.004") MAX.

EMBOSSED
CARRIER

EMBOSSMENT

TYPICAL
COMPONENT CAVITY
CENTER LINE

TYPICAL
COMPONENT
CENTER LINE

MAXIMUM COMPONENT ROTATION

CAMBER (TOP VIEW)

ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250

100 mm

(3.937")

1 mm

(0.039") MAX

250 mm

(9.843")

1 mm MAX

TAPE

EMBOSSED CARRIER DIMENSIONS (See Notes 1 and 2)

Tape

Size

Max

8 mm

4.35 mm

(0.171")

1.5 +0.1/
0.0 mm

(0.059

+0.004/

0.0")

1.0 mm

Min

(0.039")

1.75

0.1 mm

(0.069

0.004")

3.5

0.5 mm

(1.38

0.002")

2.4 mm

(0.094")

4.0

0.10 mm

(0.157

0.004")

4.0

0.1 mm

(0.156

0.004")

2.0

0.1 mm

(0.079

0.002")

25 mm

(0.98")

0.3

0.05 mm

(0.01

+0.0038/

0.0002")

8.0

0.3 mm

(0.315

0.012")

1. Metric Dimensions GovernEnglish are in parentheses for reference only.
2. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to

0.50 mm max. The component cannot rotate more than 10

within the determined cavity

Part Number MC74VHC1G07