NTE16001
Silicon NPN Transistor
Video IF Amp
Features:
D
High Transistion Frequency
D
Good Linearity of DC Current Gain
D
An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly
Mounted Flush to PC Board Surface.
Absolute Maximum Ratings: (T
A
= +25
°
C unless otherwise specified)
CollectorBase Voltage, V
CBO
45V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
600mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CEO
V
CE
= 20V, I
B
= 0
10
µ
A
CollectorBase Voltage
V
CBO
I
C
= 10
µ
A, I
E
= 0
45
V
CollectorEmitter Voltage
V
CEO
I
C
= 1mA, I
B
= 0
35
V
EmitterBase Voltage
V
EBO
I
E
= 10
µ
A, I
C
= 0
4
V
DC Current Gain
h
FE
V
CB
= 10V, I
E
= 10mA
20
50
100
CollectorEmitter Saturation Volatge
V
CE(sat)
I
C
= 20mA, I
B
= 2mA
0.5
V
Transistion Frequency
f
T
V
CB
= 10V, I
E
= 10mA, f =
100MHz
300
500
MHz
SmallSignal Reverse Transfer Capaci-
tance
C
re
V
CE
= 10V, I
C
= 1mA
1.5
pF
Power Gain
PG
V
CB
= 10V, I
E
= 10mA, f = 58MHz
18
dB
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