©
1998
PRELIMINARY DATA SHEET
FEATURE
·
Ultra super mini-mold thin flat package
(1.4 mm
×
0.8 mm
×
0.59 mm: TYP.)
·
Contains same chip as 2SC5010
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
125
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
SILICON TRANSISTOR
2SC5435
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Document No. P13078EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1.4 ± 0.1
0.59 ± 0.05
(0.9)
0.45
0.45
+0.1
0
0.3
+0.1
0.05
0.15
+0.1
0
0.2
1
3
2
T K
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
75
140
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
12.0
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
1.5
2.5
dB
Notes 1. Pulse measurement P
W
350
µ
s, duty cycle
2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
2SC5435
2
Preliminary Data Sheet
h
FE
CLASSIFICATION
RANK
EB
FB
Marking
TK
TL
h
FE
75 to 110
95 to 140
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
30
20
10
0
2
4
6
8
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
- Collector Current - mA
V
CE
- Collector to Emitter Voltage - V
I
B
=200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
µ
µ
µ
µ
µ
µ
µ
µ
µ
50
40
30
20
10
0
0.5
1.0
COLLECTOR CURRENT vs. DC BASE VOLTAGE
I
C
- Collector Current - mA
V
BE
- DC Base Voltage - V
V
CE
= 3 V
150
100
50
0
50
100
150
P
T
- Total Power Dissipation - mW
T
A
- Ambient Temperature - °C
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
500
200
100
50
20
2
5
10
20
50
100
DC CURRENT GAIN vs. COLLECTOR CURRENT
DC Current Gain - h
FE
I
C
- Collector Current - mA
V
CE
= 3 V
10
1
µ
Free Air
2SC5435
3
Preliminary Data Sheet
50
40
30
20
10
0
0.2
0.5
1
2
5
5.0
1.0
0.5
1
2
5
10
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
MAG - Maximum Available Gain - dB
|S
21e
|
2
- Insertion Power Gain - dB
C
re
- Reverse Transfer Capacitance - pF
V
CB
- Collector to Base Voltage - V
f - Frequency - GHz
0.1
MAG
V
CE
= 3 V
I
C
= 10 mA
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.1
20
50
f = 1 MHz
2.0
0.2
5
4
3
1
2
5
10
20
50
NOISE FIGURE vs. COLLECTOR CURRENT
NF - Noise Figure - dB
I
C
- Collector Current - mA
V
CE
= 3 V
f = 2 GHz
2
1
0
0.5
14
12
10
8
6
1
2
5
10
20
50
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f
T
- Gain Bandwidth Product - GHz
I
C
- Collector Current - mA
V
CE
= 3 V
f = 2 GHz
4
2
0
I
C
- Collector Current - mA
0.5
1
2
5
10
50
20
12
8
4
|S
21e
|
2
- Insertion Power Gain - dB
0
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 2 GHz
0.5
|S
21e
|
2
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