Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for generalґpurpose amplifier and lowґspeed switching applications.

High DC Current Gain --

hFE = 2500 (Typ) @ IC = 1.0 Adc

CollectorґEmitter Sustaining Voltage -- @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) -- TIP110, TIP115

VCEO(sus)

= 80 Vdc (Min) -- TIP111, TIP116

VCEO(sus)

= 100 Vdc (Min) -- TIP112, TIP117

Low CollectorґEmitter Saturation Voltage --

VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc

Monolithic Construction with Builtґin BaseґEmitter Shunt Resistors

TOґ220AB Compact Package

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*MAXIMUM RATINGS

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Rating

нннн

Symbol

нннн

TIP110,

TIP115

ннн

TIP111,

TIP116

нннн

TIP112,

TIP117

ннн

Unit

ннннннннннн

CollectorґEmitter Voltage

нннн

VCEO

нннн

ннн

нннн

100

ннн

Vdc

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CollectorґBase Voltage

нннн

VCB

нннн

ннн

нннн

100

ннн

Vdc

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EmitterґBase Voltage

нннн

VEB

ннннннннн

5.0

ннн

Vdc

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Collector Current -- Continuous

Peak

нннн

ннннннннн

2.0
4.0

ннн

Adc

ннннннннннн

Base Current

нннн

ннннннннн

ннн

mAdc

ннннннннннн

Total Power Dissipation @ TC = 25

Derate above 25

нннн

ннннннннн

0.4

ннн

Watts
W/

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Total Power Dissipation @ TA = 25

Derate above 25

нннн

ннннннннн

2.0

0.016

ннн

Watts
W/

ннннннннннн

Unclamped Inductive Load Energy --

Figure 13

нннн

ннннннннн

ннн

ннннннннннн

Operating and Storage Junction

нннн

TJ, Tstg

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ґ 65 to + 150

ннн

THERMAL CHARACTERISTICS

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Characteristics

ннннн

Symbol

нннннн

Max

ннн

Unit

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Thermal Resistance, Junction to Case

ннннн

нннннн

2.5

ннн

C/W

ннннннннннннн

Thermal Resistance, Junction to Ambient

ннннн

нннннн

62.5

ннн

C/W

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

╟

, POWER DISSIP

TION (W

TTS)

140

2.0

1.0

3.0

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP110/D

╘

Motorola, Inc. 1995

TIP110
TIP111
TIP112
TIP115
TIP116
TIP117

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 ґ 80 ґ 100 VOLTS

50 WATTS

*Motorola Preferred Device

NPN

PNP

CASE 221Aґ06

TOґ220AB

REV 1

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

Motorola Bipolar Power Transistor Device Data

нннннннннннннннннннннннннннннннннн

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

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Characteristic

нннн

Symbol

нннн

Min

нннн

Max

ннн

Unit

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OFF CHARACTERISTICS

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CollectorґEmitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP110, TIP115
TIP111, TIP116
TIP112, TIP117

нннн

VCEO(sus)

нннн

60
80

100

нннн

--
--
--

ннн

Vdc

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Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP110, TIP115

(VCE = 40 Vdc, IB = 0)

TIP111, TIP116

(VCE = 50 Vdc, IB = 0)

TIP112 ,TIP117

нннн

ICEO

нннн

--
--
--

нннн

2.0
2.0
2.0

ннн

mAdc

ннннннннннннннннннннннн

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP110, TIP115

(VCB = 80 Vdc, IE = 0)

TIP111, TIP116

(VCB = 100 Vdc, IE = 0)

TIP112, TIP117

нннн

ICBO

нннн

--
--
--

нннн

1.0
1.0
1.0

ннн

mAdc

ннннннннннннннннннннннн

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

нннн

IEBO

нннн

2.0

ннн

mAdc

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ON CHARACTERISTICS (1)

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DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)

нннн

hFE

нннн

1000

500

нннн

--
--

ннн

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CollectorґEmitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

нннн

VCE(sat)

нннн

2.5

ннн

Vdc

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BaseґEmitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

нннн

VBE(on)

нннн

2.8

ннн

Vdc

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DYNAMIC CHARACTERISTICS

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SmallґSignal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

нннн

hfe

нннн

ннн

ннннннннннннннннннннннн

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP115, TIP116, TIP117
TIP110, TIP111, TIP112

нннн

Cob

нннн

--
--

нннн

200
100

ннн

(1) Pulse Test: Pulse Width

300

╣

s, Duty Cycle

2%.

Figure 2. Switching Times Test Circuit

4.0

0.04

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

TIME (

╣

2.0

1.0
0.8

0.2

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.6

PNP
NPN

td @ VBE(off) = 0

approx
+ 8.0 V

approx

ґ12 V

tr, tf

10 ns

DUTY CYCLE = 1.0%

╣

+ 4.0 V

VCC

ґ 30 V

TUT

8.0 k

SCOPE

for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.

For NPN test circuit, reverse diode,
polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

100 mA

MSD6100 USED BELOW IB

100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25

╟

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t)

,
TRANSIENT

THERMAL

RESIST

ANCE

(NORMALIZED)

0.05

0.1

0.2

0.5

1.0

2.0

5.0

100

200

1.0 k

500

JC(t) = r(t) R

JC = 2.5

╟

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) ґ TC = P(pk) Z

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

1.0

Figure 5. TIP115, 116, 117

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1

60 80 100

BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25

╟

C (SINGLE PULSE)

I C

, COLLECT

OR CURRENT

(AMPS)

TJ = 150

╟

1 ms

TIP115
TIP116
TIP117

SECONDARY BREAKDOWN LIMITED

5 ms

CURVES APPLY BELOW
RATED VCEO

1.0

Figure 6. TIP110, 111, 112

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1

80 100

I C

, COLLECT

OR CURRENT

(AMPS)

TIP110
TIP111
TIP112

BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25

╟

C (SINGLE PULSE)

TJ = 150

╟

SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW
RATED VCEO

ACTIVEґREGION SAFEґOPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC ґ VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150

TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

0.4 0.6 1.0

2.0

4.0

0.06 0.1

0.2

C, CAP

ACIT

ANCE (pF)

TC = 25

╟

Cib

Cob

PNP
NPN

Figure 7. Capacitance

100

6.0 10

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

Motorola Bipolar Power Transistor Device Data

Figure 11. Temperature Coefficients

NPN

TIP110, 111, 112

PNP

TIP115, 116, 117

Figure 12. Collector Cut-Off Region

IC, COLLECTOR CURRENT (AMP)

+ 0.8

,
TEMPERA

TURE COEFFICIENTS (mV/

╟

ґ 0.8

ґ 1.6

ґ 2.4

ґ 3.2

ґ 4.0

ґ 4.8

*APPLIES FOR IC/IB

hFE/3

VC for VCE(sat)

VC for VBE

0.04 0.06

0.2

0.4 0.6

1.0

2.0

4.0

╟

C to 150

╟

ґ 55

╟

C to 25

╟

0.1

╟

C to 150

╟

ґ 55

╟

C to 25

╟

IC, COLLECTOR CURRENT (AMP)

+ 0.8

,
TEMPERA

TURE COEFFICIENTS (mV/

╟

ґ 0.8

ґ 1.6

ґ 2.4

ґ 3.2

ґ 4.0

ґ 4.8

*APPLIES FOR IC/IB

hFE/3

VC for VCE(sat)

VC for VBE

0.04 0.06

0.2

0.4 0.6

1.0

2.0

4.0

╟

C to 150

╟

ґ 55

╟

C to 25

╟

0.1

╟

C to 150

╟

ґ 55

╟

C to 25

╟

105

ґ 0.6

103

102

100

104

101

10ґ1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

ґ 0.4 ґ 0.2

+ 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2

VCE = 30 V

TJ = 150

╟

100

╟

REVERSE

FORWARD

+ 1.4

, COLLECT

OR CURRENT

(

╣

I C

105

ґ 0.6

103

102

100

104

101

10ґ1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

ґ 0.4 ґ 0.2

+ 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2

VCE = 30 V

TJ = 150

╟

100

╟

REVERSE

FORWARD

+ 1.4

, COLLECT

OR CURRENT

(

╣

I C

Figure 13. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.

0.71 A

0 V

ґ 5 V

3.5 ms (SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

20 V

100 ms

VCE(sat)

INPUT

MJE254

RBB1

2 k

RBB2

100

VBB2 = 0

TUT

VCE MONITOR

100 mH

VCC = 20 V

MONITOR

RS =

0.1

TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

VBB1 = 10 V

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221Aґ06

TOґ220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR
3. EMITTER
4. COLLECTOR

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.570

0.620

14.48

15.75

0.380

0.405

9.66

10.28

0.160

0.190

4.07

4.82

0.025

0.035

0.64

0.88

0.142

0.147

3.61

3.73

0.095

0.105

2.42

2.66

0.110

0.155

2.80

3.93

0.018

0.025

0.46

0.64

0.500

0.562

12.70

14.27

0.045

0.060

1.15

1.52

0.190

0.210

4.83

5.33

0.100

0.120

2.54

3.04

0.080

0.110

2.04

2.79

0.045

0.055

1.15

1.39

0.235

0.255

5.97

6.47

0.000

0.050

0.00

1.27

0.045

ґґґ

1.15

ґґґ

0.080

ґґґ

2.04

2 3

SEATING
PLANE

ґTґ

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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TIP110/D

*TIP110/D*

Part Number TIP11x