1
Motorola Thyristor Device Data
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
·
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
·
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
·
Blocking Voltage to 800 Volts
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 100
°
C, Gate Open)
F
A
B
D
M
N
S2800
VRRM
VDRM
50
100
200
400
600
800
Volts
Peak Non-repetitive Reverse Voltage and
Non-Repetitive Off-State Voltage(1)
F
A
B
D
M
N
S2800
VRSM
VDSM
75
125
250
500
700
900
Volts
RMS Forward Current
(All Conduction Angles)
TC = 75
°
C
IT(RMS)
10
Amps
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80
°
C)
ITSM
100
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
40
A2s
Forward Peak Gate Power (t
p
10
µ
s)
PGM
16
Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Operating Junction Temperature Range
TJ
40 to +100
°
C
Storage Temperature Range
Tstg
40 to +150
°
C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by S2800/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
©
Motorola, Inc. 1995
S2800
Series
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
CASE 221A-04
(TO-220AB)
STYLE 3
K
G
A
S2800 Series
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TC = 25
°
C
TC = 100
°
C
IDRM, IRRM
--
--
--
--
10
2
µ
A
mA
Instantaneous On-State Voltage,
(ITM = 30 A Peak, Pulse Width
p
1 ms, Duty Cycle
p
2%)
VT
--
1.7
2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
IGT
--
8
15
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
VGT
--
0.9
1.5
Volts
Holding Current
(Gate Open, VD = 12 Vdc, IT = 150 mA)
IH
--
10
20
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 2 A, IGR = 80 mA)
tgt
--
1.6
--
µ
s
Circuit Commutated Turn-Off Time
(VD = VDRM, ITM = 2 A, Pulse Width = 50
µ
s,
dv/dt = 200 V/
µ
s, di/dt = 10 A/
µ
s, TC = 75
°
C)
tq
--
25
--
µ
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Rise, TC = 100
°
C)
dv/dt
--
100
--
V/
µ
s
IT(AV), IT(RMS), ON-STATE CURRENT (AMPS)
2
4
6
10
8
6
4
2
12
10
8
0
0
FIGURE 2 POWER DISSIPATION
10
8
6
4
90
80
70
2
IT(AV)
FIGURE 1 CURRENT DERATING
0
IT(RMS)
100
RMS CURRENT
AV CURRENT
IT(AV), IT(RMS), MAXIMUM ON-STATE CURRENT (AMP)
T
C
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
°
P
(A
V)
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
HALF-WAVE
CURRENT WAVEFORM: A SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
MAXIMUM
MAXIMUM
HALF-WAVE
CURRENT WAVEFORM: A SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
S2800 Series
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.014
0.022
0.36
0.55
K
0.500
0.562
12.70
14.27
L
0.045
0.055
1.15
1.39
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
A
K
L
V
G
D
N
Z
H
Q
F
B
1
2
3
4
T
SEATING
PLANE
S
R
J
U
T
C
S2800 Series
4
Motorola Thyristor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
S2800/D
*S2800/D*
PDF 
ZIP