Sep.1998
W
H
K
F
S
J
J
Z
E
C
E
G
U
M
C
A
R
P
B
T
E
D
Q
L
G
N
Y - THD (2 TYP.)
V - THD
(2 TYP.)
X - DIA.
(4 TYP.)
E
E
C
G
Dimensions
Inches
Millimeters
A
4.33
110.0
B
3.15
80.0
C
3.66
±
0.008
93.0
±
0.25
D
2.44
±
0.008
62.0
±
0.25
E
1.57
40.0
F
1.42 Max.
36.0 Max.
G
1.14
29.0
H
1.00 Max.
25.5 Max.
J
0.94
24.5
K
0.93
24
L
0.83
21.0
M
0.71
18.0
Dimensions
Inches
Millimeters
N
0.69
17.5
P
0.61
15.5
Q
0.51
13.0
R
0.49
12.5
S
0.45
11.5
T
0.43
11.0
U
0.35
9.0
V
M8 Metric
M8
W
0.28
7.0
X
0.256 Dia.
Dia. 6.50
Y
M4 Metric
M4
Z
0.12
3.0
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM600HA-
28H is a 1400V (V
CES
), 600 Am-
pere Single IGBT Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
600
28
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM600HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Units
Junction Temperature
T
j
-40 to 150
°
C
Storage Temperature
T
stg
-40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1400
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
±
20
Volts
Collector Current (T
c
= 25
°
C)
I
C
600
Amperes
Peak Collector Current (T
j
150
°
C)
I
CM
1200*
Amperes
Emitter Current** (T
c
= 25
°
C)
I
E
600
Amperes
Peak Emitter Current**
I
EM
1200*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C)
P
c
4100
Watts
Mounting Torque, M8 Main Terminal
8.83~10.8
N · m
Mounting Torque, M6 Mounting
1.96~2.94
N · m
Mounting Torque, M4 Terminal
0.98~1.47
N · m
Weight
560
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
2.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
µ
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 60mA, V
CE
= 10V
5.0
6.0
8.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 600A, V
GE
= 15V
3.1
4.2**
Volts
I
C
= 600A, V
GE
= 15V, T
j
= 150
°
C
2.95
Volts
Total Gate Charge
Q
G
V
CC
= 800V, I
C
= 600A, V
GE
= 15V
3060
nC
Emitter-Collector Voltage
V
EC
I
E
= 600A, V
GE
= 0V
3.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
120
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
42
nF
Reverse Transfer Capacitance
C
res
24
nF
Resistive
Turn-on Delay Time
t
d(on)
350
ns
Load
Rise Time
t
r
V
CC
= 800V, I
C
= 600A,
700
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 2.1
500
ns
Times
Fall Time
t
f
500
ns
Diode Reverse Recovery Time
t
rr
I
E
= 600A, di
E
/dt = 1200A/
µ
s
300
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 600A, di
E
/dt = 1200A/
µ
s
6.0
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.03
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.06
°
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.035
°
C/W
MITSUBISHI IGBT MODULES
CM600HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
600
200
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
400
800
1000
10
9
1200
13
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
800
600
400
200
0
1200
1000
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
200
400
600
1000
4
3
2
1
0
1200
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
800
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25°C
I
C
= 240A
I
C
= 1200A
I
C
= 600A
1.0
1.5
2.0
2.5
3.0
4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
4
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
10
3
3.5
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
oes
C
res
10
2
C
ies
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -1200A/
µ
sec
T
j
= 25°C
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
800
1600 2400 3200 4000
16
12
8
4
0
I
C
= 600A
4800
V
CC
= 800V
V
CC
= 600V
COLLECTOR CURRENT, I
C
, (AMPERES)
10
1
10
2
10
3
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 800V
V
GE
= ±15V
R
G
= 2.1
T
j
= 125°C
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
MITSUBISHI IGBT MODULES
CM600HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
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