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________________General Description
The MAX2430 is a versatile, silicon RF power amplifier
that operates directly from a 3V to 5.5V supply, making
it suitable for 3-cell NiCd or 1-cell lithium-ion battery
applications. It is designed for use in the 800MHz to
1000MHz frequency range and, at 915MHz, can pro-
duce +21dBm (125mW) of output power with greater
than 32dB of gain at V
CC
= 3.6V.
A unique shutdown function provides an off supply cur-
rent of typically less than 1µA to save power during
"idle slots" in time-division multiple-access (TDMA)
transmissions. An external capacitor sets the RF output
power envelope ramp time. External power control is
also possible over a 15dB range. The amplifier's input
is matched on-chip to 50
. The output is an open col-
lector that is easily matched to a 50
load with few
external components.
The MAX2430 is ideal as a driver amplifier for portable
and mobile telephone systems, or as a complete power
amplifier for other low-cost applications, such as those
in the 915MHz spread-spectrum ISM band. It is fabri-
cated with Maxim's high-frequency bipolar transistor
process and is available in a thermally enhanced,
16-pin narrow SO and miniature 16-pin PwrQSOP pack-
ages with heat slug.
________________________Applications
Digital Cordless Phones
915MHz ISM-Band Applications
Two-Way Pagers
Wireless LANs
Cellular Phones
AM and FM Analog Transmitters
____________________________Features
o
Operates Over the 800MHz to 1000MHz Frequency
Range
o
Delivers 125mW at 915MHz from +3.6V Supply
(100mW typical from +3.0V supply)
o
Operates Directly from 3-Cell NiCd or 1-Cell
Lithium-Ion Battery
o
Over 32dB Power Gain
o
RF Power Envelope Ramping is Programmable
with One External Capacitor
o
Input Matched to 50
(VSWR < 2:1)
o
15dB Output Power Control Range
o
1µA Typical Shutdown Current
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
________________________________________________________________
Maxim Integrated Products
1
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
GND3
GND3
GND4
GND4
GND4
GND4
BIAS
RFOUT
GND3
SHDN
GND2
RFIN
GND2
GND1
VCC1
VCC2
TOP VIEW
MAX2430
Narrow SO/PwrQSOP
Pin Configuration
MAX2430
MASTER
BIAS
GAIN
GND2
NOTE: MAX2430IEE (PwrQSOP PACKAGE) UNDERSIDE METAL
SLUG MUST BE SOLDERED TO PCB GROUND PLANE.
GND3
VCC1
VCC2
BIAS
GND4
RFOUT
9
10
8
7
11, 12, 13, 14
1, 15, 16
3, 5
SHDN
GND1
RFIN
2
6
4
DRIVER
OUTPUT
BIAS
Functional Diagram
19-1093; Rev 2; 1/98
PART
TEMP. RANGE
PIN-PACKAGE
EVALUATION KIT MANUAL
FOLLOWS DATA SHEET
Ordering Information
MAX2430IEE
-20°C to +85°C
16 PwrQSOP
MAX2430ISE
-20°C to +85°C
16 Narrow SO
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(V
CC
= VCC1 = VCC2 = RFOUT = 3V to 5.5V, GND1 = GND2 = GND3 = GND4 = 0V, SHDN = 2.2V, BIAS = open, RFIN = open,
T
A
= -20°C to +85°C, unless otherwise noted.)
AC ELECTRICAL CHARACTERISTICS
(MAX2430 EV kit, f = 915MHz, V
CC
= 3.6V, SHDN = V
CC
, RFOUT matched to 50
resistive load, output measurements taken after
matching network, T
A
= +25°C, unless otherwise noted.) (Note 1)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC1, VCC2 ..........................................................................+6V
SHDN, BIAS...................................................-0.3V, (V
CC
+ 0.3V)
RFIN.............................................................................-0.3V, +2V
P
RFIN
..................................................................................-3dBm
Continuous Power Dissipation (T
A
= +70°C)
PwrQSOP (derate 20mW/°C above +70°C) ......................1.6W
Narrow SO (derate 20mW/°C above +70°C) ....................1.6W
Operating Temperature Range ...........................-20°C to +85°C
Storage Temperature Range .............................-65°C to +160°C
Lead Temperature (soldering, 10sec) .............................+300°C
SHDN = low
No RF input applied, V
CC
= 5.5V
BIAS pin open
SHDN = V
CC
CONDITIONS
µA
1
10
I
CC(OFF
)
Shutdown Supply Current
mA
52
70
I
CC
V
3
5.5
V
CC
Supply Voltage Range
Supply Current
V
2.2
V
BIAS
BIAS Pin Voltage
V
2.2
V
CC
V
SHDN(HI)
SHDN High Input
V
0.4
V
SHDN(LO)
SHDN Low Input
µA
18
I
SHDN
SHDN Bias Current
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
V
CC
= 3.0V
V
CC
= 3.6V
(Note 2)
P
RFIN
= -20dBm
f1 = 915MHz, f2 = 916MHz,
P
OUT
per tone = 14dBm
CONDITIONS
dBm
19
20.4
P
1dB
P
OUT
at 1dB Compression
20
21.4
MHz
800
1000
Frequency Range
32
34
dB
G
P
Power Gain
dBc
-30
OIM3
Output IM3
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
P
OUT
= P
1dB
P
OUT
= P
1dB
P
OUT
= P
1dB
P
OUT
= P
1dB
RFIN connected to 50
source
%
24
Efficiency
dBc
-40
dBc
-26
2nd Harmonic
3rd Harmonic
mA
160
I
CCRF
Supply Current
2:1
VSWR
IN
Maximum Input VSWR
V
CC
= 3V to 5.5V, P
RFIN
-10dBm (Note 3)
8:1
VSWR
OUT
Maximum Output Load
Mismatch
dB
7
NF
Noise Figure
V
CC
= 3V to 5.5V, P
RFIN
-12dBm (Note 4)
6:1
VSWR
OUT
Maximum Output Load
Mismatch for Stability
31
33
MAX2430ISE
MAX2430IEE
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
_______________________________________________________________________________________
3
25
20
15
5
10
0
250
150
200
100
50
0
P
IN
(dBm)
-15
-20
-5
-10
-25
OUTPUT POWER AND CURRENT
vs. INPUT POWER
P
OUT
(dBm)
I
CC
(mA)
P
OUT
3.6V
3.6V
5.5V
5.5V
3V
3V
I
CC
25
20
15
10
5
250
200
150
100
50
TEMPERATURE (°C)
-20
0
20
40
60
80
100
OUTPUT POWER AND CURRENT
vs. TEMPERATURE
P
OUT
(dBm)
I
CC
(mA)
-5.5V
3.6V
3V
P
OUT
@ P
IN
= -12dBm
P
OUT
@ P
IN
= -17dBm
I
CC
@ P
IN
= -17dBm
I
CC
@ P
IN
= -12dBm
30
35
40
25
20
15
10
5
MAX2430-03
P
IN
(dBm)
-15
-20
-5
-10
-25
OUTPUT POWER AND GAIN
vs. INPUT POWER
P
OUT
(dBm)
GAIN (dB)
P
OUT
3.6V
3.6V
5.5V
5.5V
3V
3V
GAIN
35
15
-20
40
60
80
100
OUTPUT POWER AND GAIN
vs. TEMPERATURE
(NORMAL OPERATING MODE)
20
30
MAX1691-4a
TEMPERATURE (°C)
25
20
0
5.5V
3.6V
3.0V
GAIN (dB)
P
OUT
(dBm)
P
IN
= -12dBm
GAIN
P
OUT
4.0
3.5
3.0
2.0
1.5
2.5
1.0
MAX2430-05
FREQUENCY (MHz)
400
600
800
1000
1200
1400
1600
INPUT VSWR
vs. FREQUENCY
VSWR
3V
5V
150
100
50
-50
-100
0
-150
MAX2430-06
FREQUENCY (MHz)
800
400
1200
1600
2000
RF INPUT IMPEDANCE
vs. FREQUENCY
INPUT IMPEDANCE (
)
REAL
IMAG
__________________________________________Typical Operating Characteristics
(MAX2430EVKIT-SO, f = 915MHz, V
CC
= 3.6V, SHDN = V
CC
, output matched to 50
resistive load, output measurements taken after
matching network, T
A
= +25°C, unless otherwise noted.)
Note 1:
Minimum and maximum parameters are guaranteed by design.
Note 2:
For optimum performance at a given frequency, output matching network must be designed for maximum output power.
See
Applications Information section. Operation outside this frequency range is possible but has not been characterized.
Note 3:
No damage to the device.
Note 4:
All non-harmonically related outputs are more than 60dB below the desired signal for any electrical phase.
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2430 EV kit, f = 915MHz, V
CC
= 3.6V, SHDN = V
CC
, output matched to 50
resistive load, output measurements taken after
matching network, T
A
= +25°C, unless otherwise noted.) (Note 1)
CONDITIONS
BIAS pin capacitor C1 = 120pF
BIAS pin capacitor C1 = 2.2nF
dB
50
µs
1
10
Turn-On/Off Times
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
SHDN = 0.4V,
P
IN
= -10dBm
dB
47
RFIN to RFOUT Isolation
MAX2430ISE
MAX2430IEE
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
4
_______________________________________________________________________________________
_____________________________Typical Operating Characteristics (continued)
(MAX2430EVKIT-SO, f = 915MHz, V
CC
= 3.6V, SHDN = V
CC
, output matched to 50
resistive load, output measurements taken after
matching network, T
A
= +25°C, unless otherwise noted.)
1V/div
MAX2430-10
5
µ
s/div
RF OUTPUT ENVELOPE CHARACTERISTICS
vs. SHUTDOWN CONTROL
V
CC
= 3.0V
BIAS CAPACITOR = 1nF
P
OUT
= 20.4dBm (110mW)
t
ON
t
OFF
= 5
µ
s
3V
0V
SHDN
3V
0V
25
20
15
10
5
0
-5
-10
-15
200
175
150
125
100
75
50
25
0
0.4
0.8
1.2
1.6
2.0
2.4
BIAS PIN VOLTAGE (V)
OUTPUT POWER AND SUPPLY CURRENT
vs. EXTERNAL CONTROL VOLTAGE
OUTPUT POWER (dBm)
I
CC
(mA)
T
A
= -20°C
T
A
= +25°C
T
A
= -20°C
T
A
= +85°C
PIN = -12dBm
V
CC
= 3.6V
T
A
= +85°C
I
CC
P
OUT
T
A
= +25°C
30
20
10
0
-10
-20
-30
-40
-50
-60
1
2
3
4
5
6
MAX2430-07
HARMONIC NUMBER
OUTPUT POWER AND HARMONICS
OUTPUT SPECTRUM (dBm)
V
CC
= 3.0V
V
CC
= 3.6V
V
CC
= 4.5V
V
CC
= 5.5V
+20.4dBm
-4.93dBm
-16.7dBm
-47.6
dBm
-35.3dBm
-54.0
dBm
f1
= 915MHz
P
OUT
= +20.4dBm
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-15
-10
-5
0
5
10
15
20
MAX2430-08
OUTPUT POWER PER TONE (dBm)
INTERMODULATION DISTORTION vs.
OUTPUT POWER AND TEMPERATURE
INTERMODULATION DISTORTION (dBc)
V
CC
= 3.6V
f1 = 915MHz
f2 = 916MHz
IM3
IM5
T
A
= -20°C
T
A
= -20°C
T
A
= +25°C
T
A
= +85°C
T
A
= +25°C
T
A
= +85°C
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-10
-5
0
5
10
15
20
MAX2430-09
OUTPUT POWER PER TONE (dBm)
INTERMODULATION DISTORTION
vs. OUTPUT POWER AND V
CC
INTERMODULATION DISTORTION (dBc)
3.0V
3.6V
3.0V
3.6V
5.5V
5.5V
IM3
IM5
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
_______________________________________________________________________________________
5
_____________________Pin Description
NAME
FUNCTION
1, 15,
16
GND3
Driver Stage Ground. Connect directly to
ground plane.
2
SHDN
Shutdown Input (TTL/CMOS)
PIN
3, 5
GND2
Input Stage Ground. Connect directly to
ground plane.
4
RFIN
RF Input. Internally matched to 50
.
Requires series DC-blocking capacitor.
9
RFOUT
Output Transistor. Open Collector.
8
VCC2
Driver Stage Output. Connect to supply
through inductor (see
Applications
Information).
7
VCC1
Bias Circuitry Supply. Connect to supply.
Bypass with 1000pF capacitor.
6
GND1
Bias Circuitry Ground. Connect directly to
ground plane.
1114
GND4
Output Stage Ground. Connect directly to
ground plane.
10
BIAS
Output Stage Bias Pin. Connect capacitor
to GND to control start-up power enve-
lope. Drive directly for power control (see
Applications Information).
Detailed Description
The MAX2430 consists of a large power output transis-
tor driven by a capacitively coupled driver stage (see
Functional Diagram). The driver and front-end gain
stages are DC-connected and biased on-chip from the
master bias cell. The master bias cell also controls the
output stage bias circuit. The input impedance at the
RFIN pin is internally matched to 50
, while the output
stage must be tuned and filtered externally for any nar-
row-band frequency range of interest between 800MHz
and 1000MHz.
The driver amplifier requires an external inductor at the
VCC2 pin to provide DC bias and proper matching to
the output stage. This inductor's value depends on the
package type and frequency range of operation; typi-
cally it will vary between 5nH and 22nH.
The output transistor at the RFOUT pin requires an
external RF choke inductor connected to the supply for
DC bias, and a matching network to transform the
desired external load impedance to the optimal internal
load impedance of approximately 15
.
The MAX2430 includes a unique shutdown feature. The
TTL/CMOS-compatible SHDN input allows the device to
be shut down completely without the use of any exter-
nal components. Also, the RF output power envelope
ramp time can be programmed with a single external
capacitor connected between the BIAS pin and
ground. Pulling the shutdown pin (SHDN) high powers
on the master bias circuit, which in turn charges the
external capacitor tied to the BIAS pin using a con-
trolled current. The voltage at BIAS controls the output
power level, which ramps until the BIAS pin is internally
clamped to approximately 2.2V. The envelope ramp-
down time is controlled in a similar manner when the
SHDN pin is pulled low.
Variable output power control over a 15dB range is also
possible by forcing the voltage on the BIAS pin exter-
nally from 0.6V to 2.4V.
During the on state (SHDN = high), the power-supply
bias current is typically 52mA with no RF applied to the
input. During the off state (SHDN = low), the supply
current is typically reduced to less than 1µA.
Note:
MAX2430IEE (PwrQSOP package) underside metal slug
must be soldered to PCB ground plane.
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