GaAs Beam Lead Schottky Barrier Diodes

MA4E2037, MA4E2039, MA4E2040

M/A-COM Division of AMP Incorporated

North America: Tel. (800) 366-2266, Fax (800) 618-8883

Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087

Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.

V3.001

Features

Low Series Resistance

Low Capacitance

High Cut-Off Frequency

Silicon Nitride Passivation

Multiple Configurations

Description

M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and
MA4E2040 series tee are gallium arsenide beam lead Schottky
barrier diodes. These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device uniformity and
extremely low parasitics. The high carrier mobility of gallium
arsenide results in lower series resistance than a silicon Schottky
with equivalent capacitance, resulting in lower noise figure and
conversion loss. The diodes are fully passivated with silicon
nitride and have an additional layer of a polymer for scratch
protection. The protective coatings prevent damage to the junction
and the anode airbridge during handling.

Applications

The high cut-off frequency of these diodes allows use through low
millimeter wave frequencies. Typical applications include single
and double balanced mixers in PCN transceivers and radios,
automotive radar systems and police radar detectors.

The MA4E2039 antiparallel pair is designed for use in subhar-
monically pumped mixers. Close matching of the diode charac-
teristics results in high LO suppression at the RF input.

Package Outlines

1, 2

Notes: (unless otherwise specified)
1. Dimensions are in mm (mils)
2. Views are with junction side up.

GaAs Beam Lead
Schottky Barrier Diodes

MA4E2037, MA4E2039, MA4E2040

Absolute Maximum Ratings

Parameter

Maximum Ratings

Operating Temperature

-65°C to +125°C

Storage Temperature

-65°C to +125°C

Incident LO Power

+20 dBm

Incident RF Power

+2- dBm

Mounting Temperature

+235°C for 10 seconds

1. Exceeding these limits may cause permanent damage.

0 .1 3 5

.0 1 0

(5 .3

.4 )

0 .2 1 0

.0 4 0

(8 .3

1 .6 )

0 .0 0 9 (0 .4 )
0 .0 1 3 (0 .5 )

0 .6 3 0

.0 1 0

(2 4 .8

.6 )

0 .0 6 0 (2 .4 )
0 .0 8 5 (3 .4 )

0 .2 6 5

.0 4 0

(1 0 .4

1 .6 )

0 .1 8 0

.0 2 0

(7 .1

.8 )

0 .1 3 5

.0 1 0

(5 .3

.4 )

0 .2 1 0

.0 4 0

(8 .3

1 .6 )

0 .0 0 9 (0 .4 )
0 .0 1 3 (0 .5 )

0 .6 3 0

.0 1 0

(2 4 .8

.6 )

0 .0 6 0 (2 .4 )
0 .0 8 5 (3 .4 )

0 .2 6 5

.0 4 0

(1 0 .4

1 .6 )

0 .1 8 0

.0 2 0

(7 .1

.8 )

0.135

.010

(5.3

.4)

0.230

.040

(9.1

1.6)

0.009 (0.4)
0.013 (0.5)

0.350

.040

(13.8

1.6)

0.175

.020

(6.9

.8)

0.700

.015

(27.6

.6)

0.060 (2.4)
0.085 (3.4)

0.135

.010

(5.3

.4)

0.375

.015

(14.8

.6)

MA4E2037

MA4E2039

MA4E2040

GaAs Beam Lead Schottky Barrier Diodes

MA4E2037, MA4E2039, MA4E2040

M/A-COM Division of AMP Incorporated

North America: Tel. (800) 366-2266, Fax (800) 618-8883

Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087

Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.

V3.001

Electrical Specifications @ T

= +25°C

MA4E2037

MA4E2039

MA4E2040

Single

Anti-parallel

Series Tee

Symbol Parameters and Test Conditions

Units

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Junction Capacitance at 0V at 1 MHz

.020

Total Capacitance at 0V at 1 MHz

.040

.050

.060

0.40

.050

.060

.040

.050

.060

Total Capacitance Difference

.005

.010

Series Resistance at +10mA

Ohms

Forward Voltage at +1mA

Volts

.60

.70

.80

.60

.70

.80

.60

.70

.80

Forward Voltage Difference at 1mA

Volts

.005

.010

.005

.010

Reverse Breakdown Voltage at -10

Volts

4.5

1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms at +10 mA.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.

Handling Procedures

The following precautions should be observed to avoid damag-
ing these chips:

Cleanliness:

These devices should be handled in a clean environment. Do not
attempt to clean die after installation.

Static Sensitivity:

Schottky barrier diodes are ESD sensitive and can be damaged
by static electricity. Proper ESD techniques should be used
when handling these devices.

General Handling:

These devices have a polymer layer which provides scratch
protection for the junction area and the anode air bridge. Beam
lead devices must, however, be handled with care since the leads
may easily be distorted or broken by the normal pressures
exerted when handled by tweezers. A vacuum pencil with a #27
tip is recommended for picking and placing. A sharpened
wooden stick which has been dipped in isopropyl alcohol may
also be used as a pick and place tool.

Mounting Techniques

These devices are designed to be inserted onto hard or soft
substrates. Recommended methods of attachment include ther-
mocompression bonding, parallel-gap welding, solder reflow
and conductive epoxy.

See Application Note M541, "Bonding and Handling Proce-
dures for Chip Diode Devices" for Detailed Instructions.

0 .0 0

0 .0 1

0 .1 0

1 .0 0

1 0 .0 0

1 0 0 .0 0

0 .2 0

0 .3 0

0 .4 0

0 .5 0

0 .6 0

0 .7 0

0 .8 0

0 .9 0

1 .0 0

F O R W A R D V O L T A G E (V )

FORWARD CURRENT (mA)

T = 1 2 5

T = 2 5

T = -5 0

Typical Forward Characteristics

Part Number MA4E2040