Features
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Very Low Total Capacitance < 0.06 pF
n
Extremely High Q > 15 K
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Silicon Nitride Passivation
n
Polymer Scratch Protection
n
Surface Mount Configuration
Description
M/A-COM's MA46H146 is a gallium arsenide flip chip
multiplier varactor These devices are facilitated on MOVPE
epitaxial wafers using a process designed for high device
uniformity and extremely low parasitics. The MA46H146
diodes are fully passivated with silicon nitride and have an
additional polymide layer for scratch protection. The
protective coatings prevent damage to the junction during
automated or manual handling. The flip chip configuration
is suitable for pick and place insertion.
GaAs Flip-Chip Multiplier
Varactor Diode
MA46H146
V 2.00
Back View (Operator Side)
1
Absolute Maximum Ratings
@T
A
= +25 °C
(unless otherwise specified)
Parameter
Absolute Maximum
Forward Current
50 mA
Reverse Voltage
-26 V
Operating Temperature
-65 °C to +150 °C
Storage Temperature
-65 °C to +150 °C
Mounting Temperature
<200 °C
Chip Layout
Front View (Circuit Side)
GaAs Flip-Chip Multiplier Varactor Diode
MA4H6H146
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 2.00
2
Case Styles
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.025
0.027
0.64
0.69
B
0.012
0.015
0.30
0.38
C
0.006
0.008
0.15
0.20
D
0.007
0.009
0.18
0.23
E
0.006
0.008
0.15
0.20
F
0.015
0.017
0.38
0.43
A
F
B
C
E
D
*Resistance is measured at 4 GHz.
Resistance vs. Bias*
Total Capacitance vs. Reverse Voltage
1. Hatched areas indicate bond pads.
0
0.025
0.05
0.075
0.1
0
10
20
30
Reverse Voltage (V)
Cj (pF)
0
1
2
3
4
0
5
10
15
20
25
Bias (V)
Resistance (Ohm)
GaAs Flip-Chip Multiplier Varactor Diode
MA4H6H146
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 2.00
Electrical Characteristics @ T
A
= +25 °C
Part Number
Vb
(V)
Ir = 10
µ
Ir
(na)
Vr = 21 V
Ct
(pF)
VR = 0 V
F = 1 MHz
Ct
(pF)
VR = 4 V
F = 1 MHz
Ct
(pF)
VR = 10 V
F = 1 MHz
Ct
(pF)
VR = 25 V
F = 1 MHz
Tuning Ratio
Ct (0 V) / Ct (25 V)
Q
VR = 0 V
50 MHz
Min.
Max.
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
MA46H146
26.0
20.0
0.063
0.040
0.032
0.030
2.10
15600
3
Applications
These GaAs Flip Chip devices are suited for millimeter
wave frequency tunable filters, where extremely low
parastics are required to maintain reasonable Q. In
addition, this product can be used in multiplier circuits, for
2X and 3X output frequencies in the millimeter wave
frequency bands.
Assembly Requirements using
Electrically Conductive Ag Epoxy
These chips are designed to be inserted onto hard or soft
substrates with the junction side down. They must be
mounted with Electrically Conductive Ag epoxy. Solders
are not recommended due to Tungsten metallization
beneath the gold contacts. The die can also be assembled
with the junction side up, and wire or ribbon bonds made
from the bond pads to the circuit trace.
Circuit can be preheated to 125 150
°
C. Use a controlled
amount of conductive epoxy for each bond pad. Finished,
uniform silver epoxy thickness should be between 1 2
mils. Cure epoxy per manufacturer's schedule. For
extended cure times, temperatures must be below 200
°
C.
Handling Procedures
The following precautions should be observed to avoid
damaging GaAs Flip-Chips:
Cleanliness
These chips should be handled in a clean environment.
Do not attempt to clean die after installation.
Static Voltage Sensitivity
Varactor diodes are ESD sensitive and can be damaged
by static electricity. Proper ESD techniques and
precautions should be followed when handling
these devices.
General Handling
The protective polymer coating on the active areas of
these devices provides scratch protection, particularly for
the metal Airbridge which contacts the anode. Dice can
be handled with tweezers or vacuum pickups and are
suitable for use with automatic pick-and-place equipment.
GaAs Flip-Chip Multiplier Varactor Diode
MA4H6H146
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 2.00
Circuit Mounting Dimensions (Inches)
4
Ordering Information
Part Number
Packaging
MA46H146-W
Wafer on Frame
MA46H146
Die in Carrier
MA46H146-T
Tape/Reel
0.010
0.010
0.008
0.010
0.010
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