MicroCapacitance (MC) SA SIDACtor Device
http://www.littelfuse.com
2 - 8
© 2004 Littelfuse, Inc.
+1 972-580-7777
SIDACtor
®
Data Book and Design Guide
MicroCapacitance (MC) SA SIDACtor Device
The DO-214AA SA MC SIDACtor series is intended for applications sensitive to load
values. Typically, high speed connections require a lower capacitance. C
O
values for the
MicroCapacitance device are 40% lower than a standard SA part.
This MC SIDACtor series is used to enable equipment to meet various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and
TIA-968-A (formerly known as FCC Part 68).
* For surge ratings, see table below.
General Notes:
· All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
· I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
· Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
· V
DRM
is measured at I
DRM.
· V
S
is measured at 100 V/µs.
· Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
· Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias.
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
T
Volts
I
DRM
µAmps
I
S
mAmps
I
T
Amps
I
H
mAmps
C
O
pF
P0080SA MC
6
25
4
5
800
2.2
50
45
P0300SA MC
25
40
4
5
800
2.2
50
25
Surge Ratings
Series
I
PP
2x10 µs
Amps
I
PP
8x20 µs
Amps
I
PP
10x160 µs
Amps
I
PP
10x560 µs
Amps
I
PP
10x1000 µs
Amps
I
TSM
60 Hz
Amps
di/dt
Amps/µs
A
150
150
90
50
45
20
500
MicroCapacitance (MC) SA SIDACtor Device
© 2004 Littelfuse, Inc.
2 - 9
http://www.littelfuse.com
SIDACtor
®
Data Book and Design Guide
+1 972-580-7777
D
a
ta
S
h
e
e
ts
Thermal Considerations
Package
Symbol
Parameter
Value
Unit
DO-214AA
T
J
Operating Junction Temperature Range
-40 to +150
°C
T
S
Storage Temperature Range
-65 to +150
°C
R
JA
Thermal Resistance: Junction to Ambient
90
°C/W
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t Time (µs)
I
PP
P
e
ak Pulse Current %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
t
r
x t
d
Pulse Wave-form
-8
-40 -20
0
20
40 60
80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) °C
P
ercent of
V
S
Change %
25 °C
Normalized V
S
Change versus Junction Temperature
0.4
-40 -20
0
20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (T
C
) °C
Ratio of
I
H
I
H
(T
C
= 25 °C)
25 °C
Normalized DC Holding Current versus Case Temperature
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