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Part Number LTC1556

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1
LTC1555/LTC1556
SIM Power Supply
and Level Translator
FEATURES
s
Step-Up/Step-Down Charge Pump Generates 5V
s
Input Voltage Range: 2.7V to 10V
s
Output Current: 10mA (V
IN
2.7V)
20mA (V
IN
3V)
s
3V to 5V Signal Level Translators
s
> 10kV ESD on All SIM Contact Pins
s
Short-Circuit and Overtemperature Protected
s
Very Low Operating Current: 60
µ
A
s
Very Low Shutdown Current: < 1
µ
A
s
Soft Start Limits Inrush Current at Turn-On
s
Programmable 3V or 5V Output Voltage
s
650kHz Switching Frequency
s
Auxiliary 4.3V LDO/Power Switch (LTC1556 Only)
s
Available in a 16- and 20-Pin Narrow SSOP
DESCRIPTIO
N
U
The LTC
®
1555/LTC1556 provide power conversion and
level shifting needed for 3V GSM cellular telephones to
interface with either 3V or 5V Subscriber Identity Mod-
ules (SIMs). These parts contain a charge pump DC/DC
converter that delivers a regulated 5V to the SIM card.
Input voltage may range from 2.7V to 10V, allowing
direct connection to the battery. Output voltage may be
programmed to 3V, 5V or direct connection to the V
IN
pin.
A soft start feature limits inrush current at turn-on,
mitigating start-up problems that may result when the
input is supplied by another low power DC/DC converter.
The LTC1556 also includes an auxiliary LDO regulator/
power switch that may be used to power the frequency
synthesizer or other low power circuitry.
Battery life is maximized by 60
µ
A operating current and
1
µ
A shutdown current. Board area is minimized by minia-
ture 16- and 20-pin narrow SSOP packages and the need
for only three small external capacitors.
TYPICAL APPLICATIO
N
U
GSM Cellular Telephone SIM Interface
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
CIN
RIN
DATA
DDRV
DV
CC
SS
M1
M0
CLK
RST
I/O
V
CC
5V
±
5%
I
VCC
10mA
GND
CLK
RST
I/O
V
CC
V
IN
C1
+
C1
­
GND
0.1
µ
F
10
µ
F
LTC1555
3V GSM
CONTROLLER
SIM
V
IN
2.7V TO 10V
3V
10
µ
F
1555/56 TA01
V
CC
+
, LTC and LT are registered trademarks of Linear Technology Corporation.
s
SIM Interface in GSM Cellular Telephones
s
Smart Card Readers
APPLICATIO
N
S
U
2
LTC1555/LTC1556
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
IN
Operating Voltage
q
2.7
10
V
DV
CC
Operating Voltage
q
1.8
5.5
V
V
IN
Operating Current
2.7V
V
IN
5V, V
CC
= 5V, I
VCC
= 0
q
60
100
µ
A
5V < V
IN
10V, V
CC
= 5V, I
VCC
= 0
q
75
135
µ
A
V
IN
Shutdown Current
M0, M1 = 0V, 2.7V
V
IN
5V
1
µ
A
M0, M1 = 0V, 2.7V
V
IN
5V
q
2
µ
A
M0, M1 = 0V, 5V < V
IN
10V
25
µ
A
DV
CC
Operating Current
M0, M1 = DV
CC
, C
IN
= 1MHz
q
6
20
µ
A
DV
CC
Shutdown Current
M0, M1 = 0V
q
1
µ
A
V
CC
Output Voltage
0
I
VCC
10mA, 2.7V
V
IN
10V
0
I
VCC
20mA, 3V
V
IN
10V
M0, M1 = DV
CC
q
4.75
5.00
5.25
V
M0 = DV
CC
, M1 = 0
q
2.80
3.00
3.20
V
M0 = 0, M1 = DV
CC
q
V
IN
­ 0.3
V
IN
V
V
CC
Output Ripple
V
IN
= 3.6V, I
VCC
= 10mA, V
CC
= 5V
75
mV
P-P
ABSOLUTE
M
AXI
M
U
M
RATINGS
W
W
W
U
(Note 1)
V
IN
, DV
CC
to GND ..................................... ­ 0.3V to 12V
V
CC
to GND ............................................... ­ 0.3V to 12V
Digital Inputs to GND ................................ ­ 0.3V to 12V
LDO, CLK, RST, I/O to GND ........ ­ 0.3V to (V
CC
+ 0.3V)
V
CC
, LDO Short-Circuit Duration ..................... Indefinite
Storage Temperature Range ................. ­ 65
°
C to 150
°
C
Temperature Range
LTC1555C/LTC1556C .............................. 0
°
C to 70
°
C
LTC1555I/LTC1556I ........................... ­ 40
°
C to 85
°
C
Extended Commercial Operating Temperature Range
(Note 2) ............................................. ­ 40
°
C to 85
°
C
Lead Temperature (Soldering, 10 sec) .................. 300
°
C
PACKAGE/ORDER I
N
FOR
M
ATIO
N
W
U
U
Consult factory for Military grade parts.
ORDER PART
NUMBER
LTC1556CGN
LTC1556IGN
ORDER PART
NUMBER
LTC1555CGN
LTC1555IGN
T
JMAX
= 150
°
C,
JA
= 135
°
C/ W
1
2
3
4
5
6
7
8
TOP VIEW
GN PACKAGE
16-LEAD PLASTIC SSOP
16
15
14
13
12
11
10
9
CIN
RIN
DATA
DDRV
DV
CC
SS
M1
M0
CLK
RST
I/O
V
CC
V
IN
C1
+
C1
­
GND
1
2
3
4
5
6
7
8
9
10
TOP VIEW
GN PACKAGE
20-LEAD PLASTIC SSOP
20
19
18
17
16
15
14
13
12
11
CIN
RIN
DATA
DDRV
EN
FB
DV
CC
SS
M1
M0
CLK
RST
I/O
LDO
V
CC
V
IN
C1
+
C1
­
GND
GND
T
JMAX
= 150
°
C,
JA
= 95
°
C/ W
ELECTRICAL CHARACTERISTICS
V
IN
= 2.7V to 10V, DV
CC
= 1.8V to 5.5V, controller digital pins tied to DV
CC
, SIM digital pins floating, EN, FB pins tied to GND
(LTC1556), C1 = 0.1
µ
F, C
OUT
= 10
µ
F unless otherwise specified.
3
LTC1555/LTC1556
V
IN
= 2.7V to 10V, DV
CC
= 1.8V to 5.5V, controller digital pins tied to DV
CC
, SIM digital pins floating, EN, FB pins tied to GND
(LTC1556), C1 = 0.1
µ
F, C
OUT
= 10
µ
F unless otherwise specified.
ELECTRICAL CHARACTERISTICS
over the ­ 40
°
C to 85
°
C temperature range by design or correlation, but
are not production tested.
Note 3: The DATA and I/O pull-down drivers must also sink current
sourced by the internal pull-up resistors.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
CC
Short-Circuit Current
V
CC
Shorted to GND
q
12.5
40
mA
Auxiliary LDO V
OUT
(V
LDO
)
EN = High, V
CC
= 5V, FB = LDO, I
LDO
= 5mA (LTC1556)
q
4.00
4.3
4.55
V
Auxiliary Switch Resistance
EN = High, V
CC
= 5V, FB = GND (LTC1556)
q
18
30
FB Input Resistance
(LTC1556)
200
k
Charge Pump f
OSC
q
500
650
800
kHz
Controller Inputs/Outputs, DV
CC
= 3V
Input Current (I
IH
, I
IL
)
M0, M1, SS, RIN, CIN
q
­ 1
1
µ
A
DDRV, EN
q
­ 5
5
µ
A
High Level Input Current (I
IH
)
DATA
q
­ 20
20
µ
A
Low Level Input Current (I
IL
)
DATA
q
1
mA
High Input Voltage Threshold (V
IH
)
M0, M1, RIN, CIN, DDRV, EN
q
0.7
×
DV
CC
V
DATA
q
DV
CC
­ 0.6
V
Low Input Voltage Threshold (V
IL
)
M0, M1, RIN, CIN, DDRV, EN
q
0.2
×
DV
CC
V
DATA
q
0.4
V
High Level Output Voltage (V
OH
)
DATA Source Current = 20
µ
A, I/O = V
CC
q
0.7
×
DV
CC
V
Low Level Output Voltage (V
OL
)
DATA Sink Current = ­ 200
µ
A, I/O = 0V (Note 3)
q
0.4
V
DATA Pull-up Resistance
Between DATA and DV
CC
q
13
20
28
k
DATA Output Rise/Fall Time
DATA Loaded with 30pF
q
1.3
2
µ
s
SIM Inputs/Outputs, DV
CC
= 3V, V
CC
= 3V or 5V
I/O High Input Voltage Threshold (V
IH
)
I
IH(MAX)
=
±
20
µ
A
q
0.5
×
V
CC
0.7
×
V
CC
V
I/O Low Input Voltage Threshold (V
IL
)
I
IL(MAX)
= 1mA
q
0.4
V
High Level Output Voltage (V
OH
)
I/O, Source Current = 20
µ
A, DATA or DDRV = DV
CC
q
0.8
×
V
CC
V
RST, CLK, Source Current = 20
µ
A
q
0.9
×
V
CC
V
Low Level Output Voltage (V
OL
)
I/O, Sink Current = ­ 1mA, DATA or DDRV = 0V (Note 3)
q
0.4
V
RST, CLK, Sink Current = ­ 200
µ
A
q
0.4
V
I/O Pull-Up Resistance
Between I/O and V
CC
q
6.5
10
14
k
SIM Timing Parameters, DV
CC
= 3V, V
CC
= 5V
CLK Rise/Fall Time
CLK Loaded with 30pF
q
18
ns
RST, I/O Rise/Fall Time
RST, I/O Loaded with 30pF
q
1
µ
s
CLK Frequency
CLK Loaded with 30pF
q
5
MHz
V
CC
Turn-On Time
SS = DV
CC
, C
OUT
= 10
µ
F, I
VCC
= 0
1
ms
SS = 0V, C
OUT
= 10
µ
F, I
VCC
= 0
6
ms
V
CC
Discharge Time to 1V
I
VCC
= 0, V
CC
= 5V, C
OUT
= 10
µ
F
3
ms
The
q
denotes specifications which apply over the specified temperature
range.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: C grade device specifications are guaranteed over the 0
°
C to 70
°
C
temperature range. In addition, C grade device specifications are assured
4
LTC1555/LTC1556
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
V
IN
INPUT VOLTAGE (V)
2
OPERATING CURRENT (
µ
A)
80
100
10
1555/56 G01
60
40
4
6
8
120
85
°
C
25
°
C
­ 40
°
C
NO EXTERNAL LOAD
Operating Current
vs Input Voltage
V
IN
INPUT VOLTAGE (V)
2
V
CC
OUTPUT VOLTAGE (V)
5.0
5.1
10
1555/56 G03
4.9
4.8
4
6
8
5.2
I
VCC
= 10mA
M0 = DV
CC
M1 = DV
CC
C
OUT
= 10
µ
F
T
A
= 25
°
C
V
IN
INPUT VOLTAGE (V)
2
SHUTDOWN CURRENT (
µ
A)
10
15
10
1555/56 G02
5
0
4
6
8
85
°
C
­ 40
°
C
20
25
°
C
Shutdown Current
vs Input Voltage
V
CC
Output Voltage
vs Input Voltage (5V Mode)
V
CC
Output Voltage
vs Input Voltage (3V Mode)
V
IN
INPUT VOLTAGE (V)
2
V
CC
OUTPUT VOLTAGE (V)
3.0
3.1
10
1555/56 G04
2.9
2.8
4
6
8
3.2
I
VCC
= 10mA
M0 = DV
CC
M1 = 0V
C
OUT
= 10
µ
F
T
A
= 25
°
C
1V/DIV
1ms/DIV
1555/56 G05
V
IN
= 3V
SS = 0V
1V/DIV
1ms/DIV
V
IN
= 3V
SS = DV
CC
1555/56 G06
V
CC
Output Voltage Turn-On Time,
SS Enabled
V
CC
Output Voltage Turn-On Time,
SS Disabled
5V V
CC
Efficiency vs Input Voltage
V
IN
INPUT VOLTAGE (V)
2
EFFICIENCY (%)
100
80
60
40
20
10
1555/56 G08
4
6
8
12
V
CC
= 5V
I
VCC
= 10mA
T
A
= 25
°
C
3V V
CC
Efficiency vs Input Voltage
V
IN
INPUT VOLTAGE (V)
0
EFFICIENCY (%)
100
80
60
40
20
8
1555/56 G07
2
4
6
10
V
CC
= 3V
I
VCC
= 10mA
T
A
= 25
°
C
5
LTC1555/LTC1556
LTC1555/LTC1556
CIN (Pin 1): Clock Input Pin from Controller.
RIN (Pin 2): Reset Input Pin from Controller.
DATA (Pin 3): Controller Side Data Input/Output Pin. Can
be used for single pin bidirectional data transfer between
the controller and the SIM card as long as the controller
data pin is open drain. The controller output must be able
to sink 1mA max when driving the DATA pin low due to
the internal pull-up resistors on the DATA and I/O pins. If
the controller data output is not open drain, then the
DDRV pin should be used for sending data to the SIM
card and the DATA pin used for receiving data from the
SIM card (see Figure 1).
DDRV (Pin 4): Optional Data Input Pin for Sending Data
to the SIM card. When not needed, the DDRV pin should
be left floating or tied to DV
CC
(an internal 1
µ
A current
source will pull the DDRV pin up to DV
CC
if left floating).
DV
CC
(Pins 5/7): Supply Voltage for Controller Side Digital
I/O Pins. May be between 1.8V and 5.5V (typically 3V).
SS (Pins 6/8): Soft Start Enable Pin. A logic low will
enable the charge pump inrush current limiting feature.
A logic high will disable the soft start feature and allow
V
CC
to be ramped as quickly as possible upon start-up
and coming out of shutdown.
M1 (Pins 7/9): Mode Control Bit 1 (see Truth Table).
M0 (Pins 8/10): Mode Control Bit 0 (see Truth Table).
This table defines the various operating modes that may
be obtained via the M0 and M1 mode control pins.
Truth Table
M0
M1
MODE
0V
0V
Shutdown (V
CC
= 0V)
0V
DV
CC
V
CC
= V
IN
DV
CC
0V
V
CC
= 3V
DV
CC
DV
CC
V
CC
= 5V
GND (Pins 9/11, 12): Ground for Both the SIM and the
Controller. Should be connected to the SIM GND contact
as well as to the V
IN
/Controller GND. Proper grounding
and supply bypassing is required to meet 10kV ESD
specifications.
C1
­
(Pins 10/12): Charge Pump Flying Capacitor Nega-
tive Input.
C1
+
(Pins 11/13): Charge Pump Flying Capacitor Positive
Input.
V
IN
(Pins 12/14): Charge Pump Input Voltage Pin. Input
voltage range is 2.7V to 10V. Connect a 10
µ
F low ESR
input bypass capacitor close to the V
IN
pin.
V
CC
(Pins 13/15): SIM Card V
CC
Output. This pin should
be connected to the SIM V
CC
contact. The V
CC
output
voltage is determined by the M0 and M1 pins (see Truth
Table). V
CC
is discharged to GND during shutdown
(M0, M1 = 0V). A 10
µ
F low ESR output capacitor should
connect close to the V
CC
pin.
I/O (Pins 14/18): SIM Side I/O Pin. The pin is an open
drain output with a nominal pull-up resistance of 10k and
should be connected to the SIM I/O contact. The SIM card
must sink up to 1mA max when driving the I/O pin low
due to the internal pull-up resistors on the I/O and DATA
pins. The I/O pin is held active low when the part is in
shutdown.
RST (Pins 15/19): Level Shifted Reset Output Pin. Should
be connected to the SIM RST contact.
CLK (Pins 16/20): Level Shifted Clock Output Pin. Should
be connected to the SIM CLK contact. Careful trace
routing is recommended due to fast rise and fall edge
speeds.
PI
N
FU
N
CTIO
N
S
U
U
U
6
LTC1555/LTC1556
PI
N
FU
N
CTIO
N
S
U
U
U
LTC1556 Only
EN (Pin 5): Auxiliary LDO/Power Switch Enable Pin. A
logic high on this pin from the controller will enable the
auxiliary LDO output. When the LDO is disabled, the LDO
output will float or be pulled to ground by the load. If left
floating, the EN pin will be pulled down to GND by an
internal 1
µ
A current source.
FB (Pin 6): Auxiliary LDO Feedback Pin. When FB is
connected to the LDO pin (Pin 17), the LDO output is
regulated to 4.3V (typ). If the FB pin is left open or tied to
BLOCK DIAGRA
M
W
ground, the regulator acts as a
30
switch between V
CC
and LDO.
LDO (Pin 17): LDO Output Pin. This pin should be tied to
the FB pin for 4.3V LDO operation. The 4.3V LDO output
is usable only when V
CC
is 5V (or greater). It is not
available when V
CC
= 3V. The LDO output may also be
used as a
30
power switch if the FB pin is grounded
or left floating. When used as a regulator, LDO must be
bypassed to GND with a
3.3
µ
F capacitor. The LDO
output current will subtract from available V
CC
current.
1.23V
61k
153k
FB
EN
1555/56 BD
DDRV
OPTIONAL
1
µ
A
1
µ
A
LDO
I/O
FREQUENCY
SYNTHESIZER
POWER
LTC1555/LTC1556
LTC1556 ONLY
4.3V
­
+
DATA
20k
10k
CLK
CIN
RST
DV
CC
SS
3V
RIN
GND
M0
M1
V
IN
V
BATT
C
IN
10
µ
F
V
CC
I/O
CLK
RST
GND
V
CC
C1
+
0.1
µ
F
C1
­
GND
STEP-UP/
STEP-DOWN
CHARGE PUMP
DC/DC
CONVERTER
SIM
CONTROLLER
V
CC
C
OUT
10
µ
F
C
LDO
10
µ
F
+
+
7
LTC1555/LTC1556
The LTC1555/LTC1556 perform the two primary func-
tions necessary for 3V controllers (e.g., GSM cellular
telephone controllers, smart card readers, etc.) to com-
municate with 5V SIMs or smart cards. They produce a
regulated 5V V
CC
supply for the SIM and provide level
translators for communication between the SIM and the
controller.
V
CC
Voltage Regulator
The regulator section of the LTC1555/LTC1556 (refer to
the Block Diagram) consists of a step-up/step-down charge
pump DC/DC converter. The charge pump can operate
over a wide input voltage range (2.7V to 10V) while
maintaining a regulated V
CC
output. The wide V
IN
range
enables the parts to be powered directly from a battery (if
desired) rather than from a 3V DC/DC converter output.
When V
IN
is less than the desired V
CC
the parts operate as
switched capacitor voltage doublers. When V
IN
is greater
than V
CC
the parts operate as gated switch step-down
converters. In either case, voltage conversion requires
only one small flying capacitor and output capacitor.
The V
CC
output can be programmed to either 5V or 3V via
the M0 and M1 mode pins. This feature is useful in
applications where either a 5V or 3V SIM may be used. The
charge pump V
CC
output may also be connected directly to
V
IN
if desired. When the charge pump is put into shutdown
(M0, M1 = 0), V
CC
is pulled to GND via an internal switch
to aid in proper system supply sequencing.
The soft start feature limits inrush currents upon start-up
or coming out of shutdown mode. When the SS pin is tied
to GND, the soft start feature is enabled. This limits the ef-
fective inrush current out of V
IN
to approximately 25mA
(C
OUT
= 10
µ
F). Inrush current limiting is especially useful
when powering the LTC1555/LTC1556 from a 3V DC/DC
output since the unlimited inrush current may approach
200mA and cause voltage transients on the 3V supply. How-
ever, in cases where fast turn-on time is desired, the soft
start feature may be overridden by tying the SS pin to DV
CC
.
APPLICATIO
N
S I
N
FOR
M
ATIO
N
W
U
U
U
Capacitor Selection
For best performance, it is recommended that low ESR
(< 0.5
) capacitors be used for both C
IN
and C
OUT
to reduce
noise and ripple. The C
IN
and C
OUT
capacitors should be
either ceramic or tantalum and should be 10
µ
F or greater
(ceramic capacitors will produce the smallest output ripple).
If the input source impedance is very low (< 0.5
), C
IN
may
not be needed. Increasing the size of C
OUT
to 22
µ
F or greater
will reduce output voltage ripple--particularly with high V
IN
voltages (8V or greater). A ceramic capacitor is recom-
mended for the flying capacitor C1 with a value of 0.1
µ
F or
0.22
µ
F.
Output Ripple
Normal LTC1555/LTC1556 operation produces voltage
ripple on the V
CC
pin. Output voltage ripple is required for
the parts to regulate. Low frequency ripple exists due to
the hysteresis in the sense comparator and propagation
delays in the charge pump enable/disable circuits. High
frequency ripple is also present mainly from the ESR
(equivalent series resistance) in the output capacitor.
Typical output ripple (V
IN
< 8V) under maximum load is
75mV peak-to-peak with a low ESR, 10
µ
F output capaci-
tor. For applications requiring V
IN
to exceed 8V, a 22
µ
F or
larger C
OUT
capacitor is recommended to maintain maxi-
mum ripple in the 75mV range.
The magnitude of the ripple voltage depends on several
factors. High input voltages increase the output ripple
since more charge is delivered to C
OUT
per charging cycle.
A large C1 flying capacitor (> 0.22
µ
F) also increases ripple
in step-up mode for the same reason. Large output current
load and/or a small output capacitor (< 10
µ
F) results in
higher ripple due to higher output voltage dV/dt. High ESR
capacitors (ESR > 0.5
) on the output pin cause high
frequency voltage spikes on V
OUT
with every clock cycle.
A 10
µ
F ceramic capacitor on the V
CC
pin should produce
acceptable levels of output voltage ripple in nearly all
applications. However, there are several ways to further
8
LTC1555/LTC1556
APPLICATIO
N
S I
N
FOR
M
ATIO
N
W
U
U
U
reduce the ripple. A larger C
OUT
capacitor (22
µ
F or greater)
will reduce both the low and high frequency ripple due to
the lower C
OUT
charging and discharging dV/dt and the
lower ESR typically found with higher value (larger case
size) capacitors. A low ESR ceramic output capacitor will
minimize the high frequency ripple, but will not reduce the
low frequency ripple unless a high capacitance value is
chosen (10
µ
F or greater). A reasonable compromise is to
use a 10
µ
F to 22
µ
F tantalum capacitor in parallel with a 1
µ
F
to 3.3
µ
F ceramic capacitor on V
OUT
to reduce both the low
and high frequency ripple. An RC filter may also be used
to reduce high frequency voltage spikes (see Figure 1).
hundred milliseconds to completely shut down. To ensure
prompt and proper V
CC
shutdown, always force the M0
and M1 pins to a logic low state before shutting down the
DV
CC
supply (see Figure 2). Similarly, bring the DV
CC
supply to a valid level before allowing the M0 and M1 pins
to go high when coming out of shutdown. This can be
achieved with pull-down resistors from M0 and M1 to
GND if necessary. (Note: shutting down the DV
CC
supply
with V
IN
active is not recommended with early date code
material. Consult factory for valid date code starting point
for shutting down the DV
CC
supply.)
Level Translators
All SIMs and smart cards contain a clock input, reset input
and a bidirectional data input/output. The LTC1555/
LTC1556 provide level translators to allow controllers to
communicate with the SIM (see Figures 3a and 3b). The
CLK and RST inputs to the SIM are level shifted from the
controller supply rails (DV
CC
and GND) to the SIM supply
rails (V
CC
and GND). The data input to the SIM may be
provided two different ways. The first method is to use the
DATA pin as a bidirectional level translator. This configu-
ration is only allowed if the controller data output pin is
open drain (all SIM I/O pins are open drain). Internal pull-
up resistors are provided for both the DATA pin and the
Figure 3b. Level Translator Connections for
One-Directional Controller Side DATA Flow
CIN
RIN
DATA
DDRV
DV
CC
CLK
RST
I/O
V
CC
CLK TO SIM
RST TO SIM
DATA FROM SIM
DATA TO SIM
LTC1555/LTC1556
CONTROLLER
SIDE
SIM SIDE
1555/56 F3b
Figure 3a. Level Translator Connections for
Bidirectional Controller DATA Pin
CIN
RIN
DATA
DDRV
DV
CC
CLK
RST
I/O
V
CC
CLK TO SIM
RST TO SIM
DATA TO/FROM SIM
LTC1555/LTC1556
CONTROLLER
SIDE
SIM SIDE
1555/56 F3a
Figure 2. Recommended DV
CC
Shutdown and Start-Up Timing
M0
DV
CC
0V
M1
DV
CC
0V
DV
CC
DV
CC
0V
V
CC
V
CC
0V
1555/56 F02
Shutting Down the DV
CC
Supply
To conserve power, the DV
CC
supply may be shut down
while the V
IN
supply is still active. When the DV
CC
supply
is brought to 0V, weak internal currents will force the
LTC1555/LTC1556 into shutdown mode regardless of the
voltages present on the M0 and M1 pins. However, if the
M0 and M1 pins are floating or left connected to DV
CC
as
the supply is shut down, the parts may take several
Figure 1. V
CC
Output Ripple Reduction Techniques
15
µ
F
TANTALUM
LT1555/56 F01
V
CC
SIM
V
CC
SIM
V
CC
1
µ
F
CERAMIC
10
µ
F
V
CC
10
µ
F
2
LTC1555/
LTC1556
+
9
LTC1555/LTC1556
I/O pin on the SIM side. The second method is to use the
DDRV pin to send data to the SIM and use the DATA pin to
receive data from the SIM. When the DDRV pin is not used,
it should either be left floating or tied to DV
CC
.
Level Translation with DV
CC
> V
CC
It is assumed that most applications for these parts will
use controller supply voltages (DV
CC
) less than or equal
to V
CC
. In cases where DV
CC
is greater than V
CC
by more
than 0.6V or so, the parts' operation will be affected in the
following ways: 1) A small DC current (up to 100
µ
A) will
flow from DV
CC
to V
CC
through the DATA pull-up resistor,
N-channel pass device and the I/O pull-up resistor
(except when the part is in shutdown at which time DV
CC
is disconnected from V
CC
by turning off the pass device).
If the V
CC
load current is less than the DV
CC
current, the
V
CC
output may be pulled out of regulation until sufficient
load current pulls V
CC
back into regulation. 2) When the
SIM is sending data back to the controller, a logic high on
the I/O pin will result in the DATA pin being pulled up to
[V
CC
+ 1/3(DV
CC
­ V
CC
)], not all the way up to DV
CC
. For
example, if DV
CC
is 5V and V
CC
is 3V, the DATA pin will
only swing from
0.1V to 3.67V when receiving data
from the SIM side.
Optional LDO Output
The LTC1556 also contains an internal LDO regulator for
providing a low noise boosted supply voltage for low power
external circuitry (e.g., frequency synthesizers, etc.) Tying
the FB pin to the LDO pin provides a regulated 4.3V at the
LDO output (see Figure 4). A 3.3
µ
F (minimum) capacitor is
APPLICATIO
N
S I
N
FOR
M
ATIO
N
W
U
U
U
required to ensure output stability. A 10
µ
F low ESR capaci-
tor is recommended, however, to minimize LDO output
noise. The LDO output may also be used as an auxiliary
switch to V
CC
. If the FB pin is left floating or is tied to GND,
the LDO pin will be internally connected to the V
CC
output
through the P-channel pass device. The LDO may be dis-
abled at any time by switching the EN pin from DV
CC
to GND.
The 4.3V LDO output is usable only when V
CC
is 5V (or
greater). It is not available when V
CC
= 3V.
Figure 4. Auxiliary LDO Connections (LTC1556 Only)
V
REF
61k
V
CC
= 5V
1
µ
A
LDO
OFF ON
10
µ
F
TANT
4.3V
1555/56 F04
I
LDO
0mA to
10mA
FB 153k
EN
­
+
+
10kV ESD Protection
All pins that connect to the SIM (CLK, RST, I/O, V
CC
, GND)
withstand over 10kV of human body model (100pF/1.5k
)
ESD. In order to ensure proper ESD protection, careful
board layout is required. The GND pins should be tied
directly to a GND plane. The V
CC
capacitor should be
located very close to the V
CC
pin and tied immediately to
the GND plane.
10
LTC1555/LTC1556
PACKAGE DESCRIPTIO
N
U
Dimensions in inches (millimeters) unless otherwise noted.
GN Package
16-Lead Plastic SSOP (Narrow 0.150)
(LTC DWG # 05-08-1641)
GN16 (SSOP) 1197
* DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
1
2
3
4
5
6
7
8
0.229 ­ 0.244
(5.817 ­ 6.198)
0.150 ­ 0.157**
(3.810 ­ 3.988)
16 15 14 13
0.189 ­ 0.196*
(4.801 ­ 4.978)
12 11 10 9
0.016 ­ 0.050
(0.406 ­ 1.270)
0.015
±
0.004
(0.38
±
0.10)
×
45
°
0
°
­ 8
°
TYP
0.007 ­ 0.0098
(0.178 ­ 0.249)
0.053 ­ 0.068
(1.351 ­ 1.727)
0.008 ­ 0.012
(0.203 ­ 0.305)
0.004 ­ 0.0098
(0.102 ­ 0.249)
0.025
(0.635)
BSC
11
LTC1555/LTC1556
PACKAGE DESCRIPTIO
N
U
Dimensions in inches (millimeters) unless otherwise noted.
GN Package
20-Lead Plastic SSOP (Narrow 0.150)
(LTC DWG # 05-08-1641)
0.337 ­ 0.344*
(8.560 ­ 8.737)
GN20 (SSOP) 1197
* DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
1
2
3
4
5
6
7
8
9 10
0.229 ­ 0.244
(5.817 ­ 6.198)
0.150 ­ 0.157**
(3.810 ­ 3.988)
16
17
18
19
20
15 14 13 12 11
0.016 ­ 0.050
(0.406 ­ 1.270)
0.015
±
0.004
(0.38
±
0.10)
×
45
°
0
°
­ 8
°
TYP
0.007 ­ 0.0098
(0.178 ­ 0.249)
0.053 ­ 0.068
(1.351 ­ 1.727)
0.008 ­ 0.012
(0.203 ­ 0.305)
0.004 ­ 0.0098
(0.102 ­ 0.249)
0.025
(0.635)
BSC
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
12
LTC1555/LTC1556
15556f LT/TP 0398 4K · PRINTED IN USA
©
LINEAR TECHNOLOGY CORPORATION 1997
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
q
(408) 432-1900
FAX: (408) 434-0507
q
TELEX: 499-3977
q
www.linear-tech.com
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DESCRIPTION
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1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
CIN
RIN
DATA
DDRV
EN
FB
DV
CC
SS
M1
M0
CLK
RST
I/O
V
CC
5V
±
5%
I
VCC
10mA
CLK
RST
I/O
LDO
V
CC
V
IN
C1
+
C1
­
GND
GND
0.1
µ
F
10
µ
F
LTC1556
3V GSM
CONTROLLER
SIM
V
IN
2.7V TO 10V
3V
10
µ
F
1555/56 TA02
V
CC
GND
+
10
µ
F
4.3V
50mA
AUXILIARY LDO/POWER SWITCH
(FREQUENCY SYNTHESIZER)
+
TYPICAL APPLICATIO
N
U
SIM Interface with Auxilary Power