2001. 1. 10
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP33C
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to TIP34C.
Recommended for 45W 50W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
C
G
L
K
H
A
D
B
E
F
I
d
P
P
T
M
J
Q
1
2
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
10
A
Base Current
I
B
3
A
Collector Power Dissipation
(Tc=25 )
P
C
80
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=100V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=25mA, I
B
=0
100
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=4V, I
C
=2A
55
-
160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=4A, I
B
=0.4A
-
-
1.0
V
Transition Frequency
f
T
V
CE
=12V, I
C
=0.5A
-
20
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
150
-
pF
Note : h
FE
Classification R:55~110, O:80~160
2001. 1. 10
2/2
TIP33C
Revision No : 1
PULSE WIDTH t (sec)
0.1
3
1
10
1
30
10
w
r - t
BASE CURRENT I (A)
C
V - I
CE(sat)
C
th
w
100
300
1K
0.3
3
0.5
5
TRANSITION THERMAL RESISTANCE
VOLTAGE V (V)
CE(sat)
COLLECTOR-EMITTER SATURATION
r ( C/W)
th
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
NO HEAT SINK
2K
f - I
T
CUT-OFF FREQUENCY f (MHz)
EMITTER CURRENT I (A)
0
-0.01
20
-0.3
-0.1
E
T
E
-1
-3
-10
10
30
-0.03
Tc
=125 C
V =-12V
CE
Tc
=25
C
Tc=-30 C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
h - I
FE
C
0.1
0.001
0.01
30
10
50
10
1
100
300
500
1K
V =4V
CE
0.01
0.01
0.001
0.03
0.05
0.1
1
10
0.3
0.1
0.5
1
COMMON EMITTER
I /C =10
C
B
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
100
150
0
20
40
60
MAXIMUM POWER DISSIPATION P (W)
C
0
25
50
75
125
80
100
Tc=Ta
INFINITE HEAT SINK
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-1
-3
-100
C
COLLECTOR CURRENT I (A)
-10
-30
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
-30
SINGLE NONREPETITIVE
PLUSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)*
30
0µ
S*
DC OP
ER
ATIO
N
-0.03
C
Tc=25
C
1.0
m
S*
10
mS
*
-200
(CONTINUOUS)
I MAX
C
Tc=125 C
Tc=25 C
Tc=-30 C
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