JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
A1015LT1
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.2 W
Tamb=25
Collector current
I
CM
: -0.15 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A
I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -0.1mA
I
B
=0
-50
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -10
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-50 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -50 V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=- 5V , I
C
=0
-0.1
A
DC current gain
H
FE(1)
V
CE
=-6V, I
C
= -2mA
130
400
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-100 mA, I
B
= -10mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-100 mA, I
B
= -10mA
-1.1
V
Transition frequency
f
T
V
CE
=-10V, I
C
= -1mA
f=
30MHz
80
MHz
CLASSIFICATION OF H
FE(1)
MARKING
BA
Unit : mm
SOT
--
23
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0°
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8°
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.071
0.012
0°
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
0.079
0.020
8°
Dimensions In Millimeters
Dimensions In Inches
0.037TPY
0.022REF
0.950TPY
0.550REF
D
E
1
A
1
A
2
A
E
L
1
L
b
e1
C
0.2
e
PDF 
ZIP