© 2000 IXYS All rights reserved
1 - 4
I
D25
= 35 A
V
DSS
= 500 V
R
DS(on)
= 0.12
W
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
VJ
= 25
°
C to 150
°
C
500
V
V
DGR
T
VJ
= 25
°
C to 150
°
C; R
GS
= 10 k
W
500
V
V
GS
Continuous
±
20
V
I
D
T
S
= 85
°
C
24
A
I
D
T
S
= 25
°
C
35
A
I
DM
T
S
= 25
°
C, t
p
=
x
95
A
P
D
T
S
= 85
°
C
170
W
I
S
V
GS
= 0 V, T
S
= 25
°
C
24
A
I
SM
V
GS
= 0 V, T
S
= 25
°
C, t
p
=
x
95
A
V
RRM
600
V
I
dAV
T
S
= 85
°
C, rectangular
d
= 0.5
40
A
I
FSM
T
VJ
= 45
°
C, t = 10 ms (50 Hz)
300
A
t = 8.3 ms (60 Hz)
320
A
T
VJ
= 150
°
C, t = 10 ms (50 Hz)
260
A
t = 8.3 ms (60 Hz)
280
A
P
T
S
= 85
°
C
36
W
V
RRM
800
V
I
dAV
T
S
= 85
°
C, sinus 180
°
40
A
I
FSM
T
VJ
= 45
°
C, t = 10 ms (50 Hz)
300
A
t = 8.3 ms (60 Hz)
320
A
T
VJ
= 150
°
C, t = 10 ms (50 Hz)
260
A
t = 8.3 ms (60 Hz)
280
A
P
T
S
= 85
°
C
33
W
T
VJ
-40...+150
°
C
T
JM
150
°
C
T
stg
-40...+150
°
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
£
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2-2.5/18-22 Nm/lb.in.
Weight
28
g
Module for Power Factor Correction
MOSFET
Boost Diode
Module
Rectifier Diodes
Features
q
Package with DCB ceramic base plate
q
Soldering connections for PCB
mounting
q
Isolation voltage 3600 V~
q
Low R
DS(on)
HDMOS
TM
process
q
Low package inductance for high
speed switching
q
Ultrafast boost diode
q
Kelvin source for easy drive
Applications
q
Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
q
Boost topology for SMPS including
1~ rectifier bridge
q
Power supply for welding equipment
Advantages
q
3 functions in one package
q
Output power up to 5 kW
q
No external isolation
q
Easy to mount with two screws
q
Suitable for wave soldering
q
High temperature and power cycling
capability
q
Fits easiliy to all available PFC
controller ICs
x
Pulse width limited by T
VJ
IXYS reserves the right to change limits, test conditions and dimensions.
VUM 24-05
V
RRM (Diode)
V
DSS
Type
V
V
600
500
VUM 24-05N
Power MOSFET Stage
for Boost Converters
5
7
6
8
3
2
4
1
5
1 3
2 7 8
4 6
© 2000 IXYS All rights reserved
2 - 4
Symbol
Test Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 2 mA
500
V
V
GS(th)
V
DS
= 20 V,
I
D
= 20 mA
2
5
V
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
500
nA
I
DSS
V
DS
= 500 V, V
GS
= 0 V
2
mA
R
DS(on)
T
VJ
= 25
°
C
0.12
W
R
Gint
T
VJ
= 25
°
C
1.5
W
g
fs
V
DS
= 15 V,
I
DS
= 12 A
30
S
V
DS
I
DS
= 24 A,
V
GS
= 0 V
1.5
V
t
d(on)
100
ns
t
d(off)
220
ns
C
iss
8.5
nF
C
oss
0.9
nF
C
rss
0.3
nF
Q
g
V
DS
= 250 V, I
D
= 12 A,
V
GS
= 10 V
350
nC
R
thJS
0.38 K/W
V
F
I
F
= 22 A;
T
VJ
= 25
°
C
1.65
V
T
VJ
=150
°
C
1.4
V
I
R
V
R
= 600 V, T
VJ
= 25
°
C
1.5
mA
V
R
= 480 V, T
VJ
= 25
°
C
0.25
mA
T
VJ
=125
°
C
7
mA
V
T0
For power-loss calculations only
1.14
V
r
T
T
VJ
= 125
°
C
10
m
W
I
RM
I
F
= 30 A;
-di
F
/dt = 240 A/
m
s
V
R
= 350 V, T
VJ
= 100
°
C
10
11
A
R
thJS
1.8 K/W
V
F
I
F
= 20 A,
T
VJ
= 25
°
C
1.4
V
T
VJ
=125
°
C
1.4
V
I
R
V
R
= 800 V T
VJ
= 25
°
C
0.25
mA
V
R
= 640 V, T
VJ
=125
°
C
2
mA
V
T0
For power-loss calculations only
1.05
V
r
T
T
VJ
= 125
°
C
16
m
W
R
thJS
2 K/W
V
DS
= 250 V, I
DS
= 12 A, V
GS
= 10 V
Zgen. = 1
W
, L-load
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
Rectifier Diodes
Boost Diode
MOSFET
Fig. 1 Non-repetitive peak surge
current (Rectifier Diodes)
VUM 24-05
Fig. 2 I
2
t for fusing (Rectifier Diodes)
Dimensions in mm (1 mm = 0.0394")
t
I
2
t
A
2
s
A
I
FSM
0.001
0.01
0.1
1
0
50
100
150
200
250
300
350
1
10
0
100
200
300
400
500
s
ms
t
V
R
= 0.8V
RRM
T
VJ
= 45
°
C
T
VJ
= 125
°
C
T
VJ
= 45
°
C
T
VJ
= 125
°
C
© 2000 IXYS All rights reserved
3 - 4
VUM 24-05
2
3
4
5
6
7
0
10
20
30
40
50
60
70
80
-50
0
50
100
150
0.0
0.5
1.0
1.5
2.0
2.5
s
g
fs
0
20
40
60
80
100
0
20
40
60
80
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
120
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
0.1
1
10
100
0
100
200
300
400
0
2
4
6
8
10
12
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
A/
m
s
V
DS
V
C
nF
nC
°
C
BV
DSS
T
VJ
norm.
°
C
V
GS
Q
g
V
norm.
V
GS(th)
T
V
J
R
DS(on)
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
I
D
V
DS
V
A
V
GS
I
D
V
A
V
F
A
T
VJ
= 25
°
C
T
VJ
= 125
°
C
-di
F
/dt
V
µ
C
V
GS
= 5 V
6 V
10 V
7 V
I
D
=18A
V
DSS
V
GS(th)
V
DS
= 250 V
I
D
= 18 A
I
G
= 10 mA
C
iss
C
oss
C
rss
Q
rr
T
VJ
=150
°
C
T
VJ
=100
°
C
T
VJ
= 25
°
C
I
F
= 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
I
F
A
I
D
typ.
max.
T
V
J
=100
°
C
V
R
= 350 V
Fig. 3 Typ. output characteristic
Fig. 4 Typ. transfer characteristics
Fig. 5 Typ. normalized
I
D
= f (V
DS
) (MOSFET)
I
D
= f (V
GS
) (MOSFET)
R
DS(on)
= f (T
VJ
) (MOSFET)
Fig. 6 Typ. normalized BV
DSS
= f (T
VJ
)
Fig. 7 Typ. turn-on gate charge
Fig. 8 Typ. capacitances C = f (V
DS
),
V
GS(th)
= f (T
VJ
) (MOSFET)
characteristics, V
GS
= f (Q
g
) (MOSFET)
f = 1 MHz (MOSFET)
Fig. 9 Typ. transconductance,
Fig. 10 Forward current versus
Fig. 11 Recovery charge versus -di
F
/dt
g
fs
= f (I
D
) (MOSFET)
voltage drop (Boost Diode)
(Boost Diode)
© 2000 IXYS All rights reserved
4 - 4
VUM 24-05
0
50
100
150
200
250
0
1
2
3
4
5
6
7
0.01
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
0
100
200
300
400
500
600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
40
60
80
100
120
0
1
2
3
4
5
6
0
100
200
300
400
500
600
0
10
20
30
40
50
kW
P
out
Z
thJC
K/W
t
-di
F
/dt
T
S
°
C
P
out
kW
0
100
200
300
400
500
600
2
4
6
8
10
12
14
16
18
0.1
0.3
0.5
0.7
0.9
V
FR
µ
s
-di
F
/dt
I
RM
A
20
40
60
80
100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
T
J
K
t
V
in
= 230 V/50 Hz
T
S
=85°C
V
in
= 115 V/60 Hz
P
out
V
in (RMS)
kW T
S
=85°C
f
c
= 40 kHz
f
c
= 80 kHz
V
f
c
= 80 kHz
V
in
= 230 V/50 Hz
V
in
= 115 V/60 Hz
°C
A/
m
s
A/
m
s
Rectifier Diodes
Boost Diode
MOSFET
I
F
= 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
typ.
max.
I
RM
Q
r
I
F
= 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
typ.
max.
V
f
c
di
F
/dt
kHz
A/
m
s
s
V
FR
t
FR
t
FR
m
s
t
rr
T
V
J
=100
°
C
V
R
= 350 V
T
V
J
=100
°
C
V
R
= 350 V
VUM 24
Fig. 12 Peak reverse current versus
Fig. 13 Dynamic parameters versus
Fig. 14 Recovery time versus
-di
F
/dt (Boost Diode)
junction temperature (Boost Diode)
-di
F
/dt (Boost Diode)
Fig. 15 Peak forward voltage versus
Fig. 16 Output power versus carrier
Fig. 17 Output power versus
-di
F
/dt (Boost Diode)
frequency (Module)
mains voltage
Fig. 18 Output power versus
Fig. 19 Transient thermal impedance junction to case for all devices
heatsink temperature (Module)
T
VJ
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