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IRF530N

HEXFET

Power MOSFET

3/16/01

Parameter

Typ.

Max.

Units

Junction-to-Case

2.15

Case-to-Sink, Flat, Greased Surface

0.50

°C/W

Junction-to-Ambient

Thermal Resistance

www.irf.com

DSS

= 100V

DS(on)

= 90m

= 17A

TO-220AB

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Description

PD - 91351

Absolute Maximum Ratings

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Power Dissipation

Linear Derating Factor

0.47

W/°C

Gate-to-Source Voltage

± 20

Avalanche Current

9.0

Repetitive Avalanche Energy

7.0

dv/dt

Peak Diode Recovery dv/dt

7.4

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf·in (1.1N·m)

IRF530N

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Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 9.0A, V

= 0V

Reverse Recovery Time

140

= 25°C, I

= 9.0A

Reverse Recovery Charge

320

480

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

Starting T

= 25°C, L = 2.3mH

= 25

, I

= 9.0A, V

=10V (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Notes:

9.0A, di/dt

410A/µs, V

(BR)DSS

175°C

Pulse width

400µs; duty cycle

2%.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to T

= 175°C .

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

100

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.11

V/°C

Reference to 25°C, I

= 1mA

DS(on)

Static Drain-to-Source On-Resistance

= 10V, I

= 9.0A

GS(th)

Gate Threshold Voltage

2.0

4.0

= V

, I

= 250µA

Forward Transconductance

= 50V, I

= 9.0A

µA

= 100V, V

= 0V

250

= 80V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= 20V

Gate-to-Source Reverse Leakage

-100

= -20V

Total Gate Charge

= 9.0A

Gate-to-Source Charge

7.2

= 80V

Gate-to-Drain ("Miller") Charge

= 10V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

9.2

= 50V

Rise Time

= 9.0A

d(off)

Turn-Off Delay Time

= 12

Fall Time

= 10V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

920

= 0V

oss

Output Capacitance

130

= 25V

rss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Single Pulse Avalanche Energy

340

= 9.0A, L = 2.3mH

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Internal Drain Inductance

Internal Source Inductance

GSS

4.5

7.5

DSS

Drain-to-Source Leakage Current

IRF530N

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

0.1

100

20µs PULSE WIDTH
T = 175 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

4.0

5.0

6.0

7.0

8.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 175 C

-60 -40 -20

20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

15A

IRF530N

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

400

800

1200

1600

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

Ciss

Coss

Crss

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

9.0A

= 20V

= 50V

= 80V

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 175 C

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

I D

, Drain-to-Source Current (A)

Tc = 25°C
Tj = 175°C
Single Pulse

1msec

10msec

OPERATION IN THIS AREA
LIMITED BY R DS(on)

100µsec

IRF530N

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

100

125

150

175

T , Case Temperature

( C)

I , Drain Current (A)

90%

10%
V

d(on)

d(off)

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Part Number IRF530N