346
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS373DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead SBDIP
HCS373KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
HCS373D/Sample
+25
o
C
Sample
20 Lead SBDIP
HCS373K/Sample
+25
o
C
Sample
20 Lead Ceramic Flatpack
HCS373HMSR
+25
o
C
Die
Die
HCS373MS
Radiation Hardened
Octal Transparent Latch, Three-State
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
OE
Q0
D0
D1
Q1
Q2
D3
D2
Q3
GND
VCC
D7
D6
Q6
Q7
Q5
D5
D4
Q4
LE
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
OE
Q0
D0
D1
Q1
Q2
D2
D3
9
10
12
11
Q3
GND
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
LE
Features
· 3 Micron Radiation Hardened CMOS SOS
· Total Dose 200K RAD (Si)
· SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
· Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
· Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
· Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
· Latch-Up Free Under Any Conditions
· Military Temperature Range: -55
o
C to +125
o
C
· Significant Power Reduction Compared to LSTTL ICs
· DC Operating Voltage Range: 4.5V to 5.5V
· Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
· Input Current Levels Ii
5
µ
A at VOL, VOH
Description
The Intersil HCS373MS is a Radiation Hardened octal transpar-
ent three-state latch with an active-low output enable. The
HCS373MS utilizes advanced CMOS/SOS technology. The out-
puts are transparent to the inputs when the Latch Enable (LE) is
HIGH. When the Latch Enable (LE) goes LOW, the data is
latched. The Output Enable (OE) controls the three-state outputs.
When the Output Enable (OE) is HIGH, the outputs are in the
high impedance state. The latch operation is independent of the
state of the Output Enable.
The HCS373MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS373MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518845
File Number
2135.2
DB NA
347
HCS373MS
Functional Diagram
TRUTH TABLE
OE
LE
D
Q
L
H
H
H
L
H
L
L
L
L
I
L
L
L
h
H
H
X
X
Z
H = High Level,
L = Low Level
X = Immaterial,
Z = High Impedance
I = Low voltage level prior to the high-to-low latch enable transition
h = High voltage level prior to the high-to-low latch enable transition
D
Q
LE
D
LE
Q
OE
LATCH
COMMON CONTROLS
OE
1 OF 8
(3, 4, 7, 8, 13,
14, 17, 18)
(2, 5, 6, 9, 12,
15, 16, 19)
(1)
(11)
Spec Number
518845
348
Specifications HCS373MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .±
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
107
o
C/W
28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
µ
A
2, 3
+125
o
C, -55
o
C
-
750
µ
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
µ
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
µ
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
µ
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
µ
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
±
0.5
µ
A
2, 3
+125
o
C, -55
o
C
-
±
5.0
µ
A
Output Three-State
Leakage
IOZ
VCC = 5.5V, VO = 0V or
VCC
1
+25
o
C
-
±
1.0
µ
A
2, 3
+125
o
C, -55
o
C
±
50
µ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518845
349
Specifications HCS373MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Data to Qn
TPLH,
TPHL
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
LE to Qn
TPLH,
TPHL
VCC = 4.5V
9
+25
o
C
2
24
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
Enable to Output
TPZL
VCC = 4.5V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
31
ns
TPZH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
Disable to Output
TPLZ,
TPHZ
VCC = 4.5V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
30
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power Dissipation
CPD
VCC = 5.0V, f = 1MHz
+25
o
C
-
57
pF
+125
o
C, -55
o
C
-
60
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
-
10
pF
+125
o
C, -55
o
C
-
10
pF
Output Transition Time
TTHL
TTLH
VCC = 4.5V
+25
o
C
-
12
ns
+125
o
C, -55
o
C
-
18
ns
Setup Time Data to LE
TSU
VCC = 4.5V
+25
o
C
10
-
ns
+125
o
C, -55
o
C
15
-
ns
Hold Time Data to LE
TH
VCC = 4.5V
+25
o
C
5
-
ns
+125
o
C, -55
o
C
5
-
ns
Pulse Width LE
TW
VCC = 4.5V
+25
o
C
16
-
ns
+125
o
C, -55
o
C
24
-
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518845
350
Specifications HCS373MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
mA
Output Current (Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC)
VIL = 0.30(VCC), IOL = 50
µ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC)
VIL = 0.30(VCC), IOH = -50
µ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
µ
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC,
VCC = 5.5V
+25
o
C
-
±
50
µ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25
o
C
-
-
-
Data to Qn
TPLH,
TPHL
VCC = 4.5V
+25
o
C
2
24
ns
LE to Qn
TPLH,
TPHL
VCC = 4.5V
+25
o
C
2
29
ns
Enable to Output
TPZL
VCC = 4.5V
+25
o
C
2
31
ns
TPZH
VCC = 4.5V
+25
o
C
2
24
ns
Disable to Output
TPLZ,
TPHZ
VCC = 4.5V
+25
o
C
2
30
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
µ
A
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
±
200nA
Spec Number
518845
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