BUZ 103SL
Data Book
1
05.99
SIPMOS
Power Transistor
Product Summary
Drain source voltage
55
V
DS
V
Drain-Source on-state resistance
0.026
R
DS(on)
I
D
Continuous drain current
28
A
Features
· N channel
·
Enhancement mode
· Avalanche rated
· Logic Level
· d
v
/d
t
rated
· 175 °C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
BUZ103SL
Tube
P-TO220-3-1 Q67040-S4008-A2
BUZ103SL E3045A
Tape and Reel
Q67040-S4008-A6
P-TO263-3-2
Tube
BUZ103SL E3045
P-TO263-3-2 Q67040-S4008-A5
Maximum Ratings, at
T
j = 25 °C unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
28
20
I
D
A
Pulsed drain current
T
C
= 25 °C
I
Dpulse
112
Avalanche energy, single pulse
I
D
= 28 A,
V
DD
= 25 V,
R
GS
= 25
mJ
E
AS
140
Avalanche energy, periodic limited by
T
jmax
7.5
E
AR
Reverse diode d
v
/d
t
I
S
= 28 A,
V
DS
= 40 V, d
i
/d
t
= 200 A/
µ
s,
T
jmax
= 175 °C
d
v
/d
t
6
kV/
µ
s
Gate source voltage
V
GS
20
V
Power dissipation
T
C
= 25 °C
P
tot
75
W
Operating and storage temperature
T
j ,
T
stg
°C
-55... +175
55/175/56
IEC climatic category; DIN IEC 68-1
BUZ 103SL
Data Book
2
05.99
Thermal Characteristics
Parameter
Values
Symbol
Unit
typ.
max.
min.
Characteristics
R
thJC
-
-
2
K/W
Thermal resistance, junction - case
-
Thermal resistance, junction - ambient, leded
R
thJA
-
62
-
-
-
-
62
40
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
max.
typ.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
-
V
(BR)DSS
55
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 50 µA
V
GS(th)
2
1.6
1.2
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 °C
-
-
I
DSS
µA
1
100
0.1
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
nA
100
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 20 A
V
GS
= 10 V,
I
D
= 20 A
R
DS(on)
-
-
0.04
0.0235
0.044
0.026
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
BUZ 103SL
Data Book
3
05.99
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 20 A
g
fs
10
20
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
-
770
960
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
230
300
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-
130
165
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
t
d(on)
-
10
15
ns
Rise time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
t
r
-
75
115
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
t
d(off)
-
30
45
Fall time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
t
f
-
20
30
BUZ 103SL
Data Book
4
05.99
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 40 V,
I
D
= 28 A
6
nC
4
Q
gs
-
-
12
Q
gd
Gate to drain charge
V
DD
= 40 V,
I
D
= 28 A
18
Gate charge total
V
DD
= 40 V,
I
D
= 28 A,
V
GS
= 0 to 10 V
-
32
50
Q
g
Gate plateau voltage
V
DD
= 40 V,
I
D
= 28 A
V
(plateau)
4
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
I
S
-
-
28
A
Inverse diode direct current,pulsed
T
C
= 25 °C
I
SM
-
-
112
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 56 A
V
SD
-
1.1
V
1.8
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/µs
t
rr
-
60
ns
90
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/µs
Q
rr
-
µC
0.15
0.25
BUZ 103SL
Data Book
5
05.99
Power Dissipation
P
tot
=
f
(
T
C
)
0
20
40
60
80
100 120 140 160 °C 190
T
C
0
10
20
30
40
50
60
W
80
BUZ103SL
P
tot
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100 120 140 160 °C 190
T
C
0
2
4
6
8
10
12
14
16
18
20
22
24
A
30
BUZ103SL
I
D
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
BUZ103SL
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
BUZ103SL
I
D
R
D
S
(o
n)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 15.0µs
BUZ 103SL
Data Book
6
05.99
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80 µs
0.0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
V
5.0
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
BUZ103SL
I
D
V
GS
[V]
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
P
tot
= 75W
l
10.0
Typ. drain-source-on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
0
10
20
30
40
A
60
I
D
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.15
BUZ103SL
R
DS(on)
V
GS
[V] =
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
l
10.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
2 x
I
D
x
R
DS(on)max
1
2
3
4
V
6
V
GS
0
10
20
30
40
A
60
I
D
Typ. forward transconductance
g
fs
= f
(
I
D
)
;
T
j
= 25°C
parameter:
g
fs
0
10
20
30
40
A
60
I
D
0
5
10
15
S
25
g
fs
BUZ 103SL
Data Book
7
05.99
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 20 A,
V
GS
= 4.5 V
-60
-20
20
60
100
140
°C
200
T
j
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.15
BUZ103SL
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter :
V
GS
=
V
DS
,
I
D
= 50 µA
-60
-20
20
60
100
140
°C
200
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
min
typ
max
Typ. capacitances
C = f (V
DS
)
Parameter:
V
GS
= 0 V,
f
= 1 MHz
0
10
20
V
40
V
DS
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j
,
t
p
= 80 µs
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
0
10
1
10
2
10
3
10
A
BUZ103SL
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
BUZ 103SL
Data Book
8
05.99
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 28 A
0
10
20
30
40
nC
55
Q
Gate
0
2
4
6
8
10
12
V
16
BUZ103SL
V
GS
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 28 A,
V
DD
= 25 V
R
GS
= 25
20
40
60
80
100
120
140
°C
180
T
j
0
50
mJ
150
E
AS
Drain-source breakdown voltage
V
(BR)DSS
=
f (T
j
)
-60
-20
20
60
100
140
°C
200
T
j
50
52
54
56
58
60
62
64
V
66
BUZ103SL
V
(BR)DSS
PDF 
ZIP