Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
OCTOBER 1995
©
1996 Integrated Device Technology, Inc.
9.2
DSC-2920/5
1
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
IDT49FCT805BT/CT
IDT49FCT806BT/CT
IDT49FCT805T
IDT49FCT806T
FEATURES:
· 0.5 MICRON CMOS Technology
· Guaranteed low skew < 500ps (max.)
· Very low duty cycle distortion < 600ps (max.)
· Low CMOS power levels
· TTL compatible inputs and outputs
· TTL level output voltage swings
· High drive: -32mA I
OH
, 48mA I
OL
· Two independent output banks with 3-state control
· 1:5 fanout per bank
· `Heartbeat' monitor output
· ESD > 2000V per MIL-STD-883, Method 3015;
> 200V using machine model (C = 200pF, R = 0)
· Available in DIP, SOIC, SSOP, QSOP, Cerpack and
LCC packages
OE
A
5
5
IN
A
IN
B
OE
B
OA
1
-OA
5
OB
1
-OB
5
MON
2920 drw 01
FAST CMOS
BUFFER/CLOCK DRIVER
· Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT49FCT805BT/CT and IDT49FCT806BT/CT are
clock drivers built using advanced dual metal CMOS technol-
ogy. The IDT49FCT805BT/CT is a non-inverting clock driver
and the IDT49FCT806BT/CT is an inverting clock driver. Each
device consists of two banks of drivers. Each bank drives five
output buffers from a standard TTL compatible input. The
805BT/CT and 806BT/CT have extremely low output skew,
pulse skew, and package skew. The devices has a "heart-
beat" monitor for diagnostics and PLL driving. The MON
output is identical to all other outputs and complies with the
output specifications in this document. The 805BT/CT and
806BT/CT offer low capacitance inputs with hysteresis.
FUNCTIONAL BLOCK DIAGRAMS
OE
A
5
5
IN
A
IN
B
OE
B
OA
1
-OA
5
OB
1
-OB
5
2920 drw 02
MON
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.2
2
PIN CONFIGURATIONS
IDT49FCT805T
IDT49FCT806T
INDEX
LCC
TOP VIEW
3
2
20 19
1
4
5
6
7
8
18
17
16
15
14
9 10 11 12 13
L20-2
OA
3
GND
OA
4
OA
5
GND
OB
2
OB
3
GND
OB
4
OB
5
2920 drw 04
OE
A
IN
A
IN
B
OE
B
MON
OA
2
OA
1
V
CC
V
CC
OB
1
PIN DESCRIPTION
2920 tbl 01
FUNCTION TABLE
(1)
OB
1
OA
1
OA
3
GND
OA
4
OA
5
OA
2
OE
A
IN
A
OB
2
OB
3
GND
OB
4
MON
IN
B
OB
5
OE
B
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
P20-1
D20-1
SO20-2
SO20-7
SO20-8
&
E20-1
V
CC
2920 drw 03
GND
OB
1
GND
GND
IN
A
OB
2
OB
3
GND
OB
4
MON
IN
B
OB
5
OE
B
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
P20-1
D20-1
SO20-2
SO20-7
SO20-8
&
E20-1
V
CC
2920 drw 05
OA
1
OA
3
OA
2
OA
4
OA
5
OE
A
OB
2
OB
3
GND
OB
4
OB
5
INDEX
LCC
TOP VIEW
3
2
20 19
1
4
5
6
7
8
18
17
16
15
14
9
10 11 12 13
L20-2
GND
GND
2920 drw 06
OA
3
OA
4
OA
5
OE
A
IN
A
IN
B
OE
B
MON
OA
2
OA
1
V
CC
V
CC
OB
1
Pin Names
Description
OE
A
,
OE
B
3-State Output Enable Inputs (Active LOW)
IN
A
, IN
B
Clock Inputs
OA
n
, OB
n
Clock Outputs (FCT805T)
OA
n
,
OB
n
Clock Outputs (FCT806T)
MON
Monitor Output (FCT805T)
MON
Monitor Output (FCT806T)
Outputs
Inputs
49FCT805T
49FCT806T
OE
OE
A
,
OE
OE
B
IN
A
, IN
B
OA
n
, OB
n
MON
OA
OA
n
,
OB
OB
n
MON
MON
L
L
L
L
H
H
L
H
H
H
L
L
H
L
Z
L
Z
H
H
H
Z
H
Z
L
NOTE:
2920 tbl 02
1. H = HIGH, L = LOW, Z = High Impedance
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.2
3
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
NOTE:
1. This parameter is measured at characterization but not tested.
2920 lnk 04
Symbol
Parameter
(1)
Conditions
Typ.
Max.
Unit
C
IN
Input
Capacitance
V
IN
= 0V
4.5
6.0
pF
C
OUT
Output
Capacitance
V
OUT
= 0V
5.5
8.0
pF
Symbol
Rating
Commercial
Military
Unit
V
TERM(2)
Terminal Voltage
with Respect to
GND
0.5 to +7.0
0.5 to +7.0
V
V
TERM(3)
Terminal Voltage
with Respect to
GND
0.5 to V
CC
+0.5
0.5 to V
CC
+0.5
V
T
A
Operating
Temperature
0 to +70
55 to +125
°
C
T
BIAS
Temperature
Under Bias
55 to +125
65 to +135
°
C
T
STG
Storage
Temperature
55 to +125
65 to +150
°
C
I
OUT
DC Output
Current
60 to +120
60 to +120
mA
2920 lnk 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC
by +0.5V unless otherwise noted.
2. Input and V
CC
terminals.
3. Output and I/O terminals.
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25
°
C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is
±
5
µ
A at T
A
= 55
°
C.
2920 lnk 05
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
2.0
--
--
V
V
IL
Input LOW Level
Guaranteed Logic LOW Level
--
--
0.8
V
I
I H
Input HIGH Current
(5)
V
CC
= Max.
V
I
= 2.7V
--
--
±
1
µ
A
I
I L
Input LOW Current
(5)
V
CC
= Max.
V
I
= 0.5V
--
--
±
1
µ
A
I
OZH
High Impedance Output Current
V
CC
= Max.
V
O
= 2.7V
--
--
±
1
µ
A
I
OZL
(3-State Output pins)
(5)
V
O
= 0.5V
--
--
±
1
µ
A
I
I
Input HIGH Current
(5)
V
CC
= Max., V
I
= V
CC
(Max.)
--
--
±
1
µ
A
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= 18mA
--
0.7
1.2
V
I
OS
Short Circuit Current
V
CC
= Max.
(3)
, V
O
= GND
60
120
225
mA
V
OH
Output HIGH Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= 12mA MIL.
I
OH
= 15mA COM'L.
2.4
3.3
--
V
I
OH
= 24mA MIL.
I
OH
= 32mA COM'L.
(4)
2.0
3.0
--
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OL
= 32mA MIL.
I
OL
= 48mA COM'L.
--
0.3
0.55
V
I
OFF
Input/Output Power Off Leakage
(5)
V
CC
= 0V, V
IN
or V
O
4.5V
--
--
±
1
µ
A
V
H
Input Hysteresis for all inputs
--
--
150
--
mV
I
CCL
I
CCH
I
CCZ
Quiescent Power Supply Current
V
CC
= Max., V
IN
= GND or V
CC
--
5
500
µ
A
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified
Commercial: T
A
= 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= 55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.2
4
POWER SUPPLY CHARACTERISTICS
2920 tbl 06
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Per TTL driven input; (V
IN
= 3.4V); all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
O
N
O
)
I
CC
= Quiescent Current (I
CCL,
I
CCH
and
I
CCZ
)
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
O
= Output Frequency
N
O
= Number of Outputs at f
O
All currents are in milliamps and all frequencies are in megahertz.
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
I
CC
Quiescent Power Supply Current
TTL Inputs HIGH
V
CC
= Max.
V
IN
= 3.4V
(3)
--
0.5
2.0
mA
I
CCD
Dynamic Power Supply Current
(4)
V
CC
= Max.
Outputs Open
OE
A
=
OE
B
= GND
50% Duty Cycle
V
IN
= V
CC
V
IN
= GND
--
60
100
µ
A/
MHz/bit
I
C
Total Power Supply Current
(6)
V
CC
= Max.
Outputs Open
fo = 25MHz
V
IN
= V
CC
V
IN
= GND
--
1.5
3.0
mA
50% Duty Cycle
OE
A
=
OE
B
=V
CC
Mon. Output Toggling
V
IN
= 3.4V
V
IN
= GND
--
1.8
4.0
V
CC
= Max.
Outputs Open
fo = 50MHz
V
IN
= V
CC
V
IN
= GND
--
33
55.5
(5)
50% Duty Cycle
OE
A
=
OE
B
= GND
Eleven Outputs
Toggling
V
IN
= 3.4V
V
IN
= GND
--
33.5
57.5
(5)
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.2
5
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
(3,4)
NOTES:
1. See test circuits and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. t
PLH
, t
PHL
, t
SK
(t) are production tested. All other parameters guaranteed but not production tested.
4. Propagation delay range indicated by Min. and Max. limit is due to V
CC
, operating temperature and process parameters. These propagation delay
limits do not imply skew.
2920 tbl 07
IDT49FCT805BT/806BT
IDT49FCT805CT/806CT
Com'l.
Mil.
Com'l.
Mil.
Symbol
Parameter
Condition
(1)
Min
.(2)
Max.
Min
.(2)
Max.
Min
.(2)
Max.
Min
.(2)
Max.
Unit
t
PLH
t
PHL
Propagation Delay
IN
A
to OA
n
, IN
B
to OB
n
C
L
= 50pF
R
L
= 500
1.5
5.0
1.5
5.7
1.5
4.5
1.5
5.2
ns
t
R
Output Rise Time
--
1.5
--
2.0
--
1.5
--
2.0
ns
t
F
Output Fall Time
--
1.5
--
1.5
--
1.5
--
1.5
ns
t
SK
(o)
Output skew: skew between outputs of all
banks of same package (inputs tied together)
--
0.7
--
0.9
--
0.5
--
0.7
ns
t
SK
(p)
Pulse skew: skew between opposite
transitions of same output (|t
PHL
t
PLH
|)
--
0.7
--
0.9
--
0.6
--
0.8
ns
t
SK
(t)
Package skew: skew between outputs of
different packages at same power supply
voltage, temperature, package type and
speed grade
--
1.2
--
1.5
--
1.0
--
1.2
ns
t
PZL
t
PZH
Output Enable Time
OE
A
to OA
n
,
OE
B
to OB
n
1.5
6.0
1.5
6.5
1.5
5.0
1.5
6.0
ns
t
PLZ
t
PHZ
Output Disable Time
OE
A
to OA
n
,
OE
B
to OB
n
1.5
6.0
1.5
6.5
1.5
5.0
1.5
6.0
ns
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