HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4

H01N45A

HSMC Product Specification

H01N45A

N-Channel Power Field Effect Transistor

Features

Typical R

DS(on)

=4.1

Extremely High dv/dt Capability

100% Avalanche Tested

Gate Charge Minimized

New High Voltage Benchmark

Applications

Switch Mode Low Power Supplies (SMPS)

Low Power, Low Cost CFL (Compact Fluorescent Lamps)

Low Power Battery Chargers

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

Drain-Source Voltage (V

=0)

450

DGR

Drain-Gate Voltage (R

=20K

)

450

Gate-Source Voltage

Drain Current (Continuous) at T

=25

0.5

Drain Current (Continuous) at T

=100

0.315

Drain Current (Pulsed)

Total Power Dissipation at T

=25

2.5

Derate Factor

0.025

dv/dt

Peak Diode recovery Voltage Slope

V/ns

, T

stg

Operating Junction and Storage Temperature Range

-65 to 150

Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by T

Max.)

1.5

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25

=100V, V

=10V, I

=2A, L=10mH, R

=25

)

Thermal Data

Symbol

Parameter

Value

Units

thj-amb

Thermal Resistance Junction-Ambient (Max.)

120

C/W

thj-lead

Thermal Resistance Junction-Leadt (Max.)

C/W

Maximum Lead Temperature for Soldering Purpose

260

H01N45A Pin Assignment

3-Lead Plastic TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source

Symbol:

1 2

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4

H01N45A

HSMC Product Specification

Electrical Characteristics

case

=25

C, unless otherwise specified)

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

ON/OFF

(BR)DSS

Drain-Source Breakdown Voltage

=0V, I

=250uA

450

=Max. Rating

DSS

Zero Gate Voltage Drain Current
(V

=0)

=Max. Rating, T

=125

GSS

Gate-Body Leakage Current
(V

=0)

30V

100

GS(th)

Gate Threshold Voltage

, I

=250uA

2.3

3.7

DS(on)

Static Drain-Source On Resistance V

=10V, I

=0.5A

4.1

4.5

Dynamic

Forward Transconductance

D(on)

DS(on)max.

, I

=0.5A

1.1

iss

Input Capacitance

185

230

oss

Output Capacitance

27.5

rss

Reverse Transfer Capacitance

=25V, V

=0V, f=1MHz

Switching On

d(on)

Turn-on Delay Time

6.7

Rise Time

=225V, I

=0.5A, R

=4.7

=10V)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

=360V, I

=0.5A, V

=10V,

=4.7

)

3.2

Switching Off

r(Voff)

Off-Voltage Rise Time

8.5

Fall Time

Cross-Over Time

=360V, I

=1.5A, R

=4.7

=10V)

Source Drain Diode

Source-Drain Current

1.5

SDM

Source-Drain Current (pulsed)

Forward On Voltage

=1.5A, V

1.6

Reverse Recovery Time

=1.5A, di/dt=100A/us

225

Reverse Recovery Charge

=100V, T

=150oC

530

RRM

Reverse Recovery Current

4.7

*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 3/4

H01N45A

HSMC Product Specification

TO-92 Dimension

TO-92 Taping Dimension

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

HSMC reserves the right to make changes to its products without notice.

HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454

Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931

H2A

F1F2

DIM

Min.

Max.

4.33

4.83

4.33

4.83

12.70

0.36

0.56

*1.27

3.36

3.76

0.36

0.56

*2.54

*1.27

*: Typical, Unit: mm

3-Lead TO-92 Plastic Package

HSMC Package Code: A

DIM

Min.

Max.

4.33

4.83

3.80

4.20

0.36

0.53

4.33

4.83

F1,F2

2.40

2.90

15.50

16.50

8.50

9.50

H2A

2.50

12.50

12.90

5.95

6.75

50.30

51.30

0.55

1.42

0.36

0.68

17.50

19.00

5.00

7.00

Unit: mm

Marking:

Pb Free Mark

Pb-Free: "

(Note)

Normal: None

Control Code

Date Code

0 1 N

4 5

Note: Green label is used for pb-free packing

Pin Style: 1.Gate 2.Drain 3.Source

Material:

Lead solder plating: Sn60/Pb40 (Normal),

Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)

Mold Compound: Epoxy resin family,

flammability solid burning class: UL94V-0

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 4/4

H01N45A

HSMC Product Specification

Soldering Methods for HSMC's Products

1. Storage environment: Temperature=10

C~35

C Humidity=65%ą15%

2. Reflow soldering of surface-mount devices

Profile Feature

Sn-Pb Eutectic Assembly

Pb-Free Assembly

Average ramp-up rate (T

to T

)

C/sec

Preheat
- Temperature Min (Ts

min

)

- Temperature Max (Ts

max

)

- Time (min to max) (ts)

100

150

60~120 sec

150

200

60~180 sec

Tsmax to T

- Ramp-up Rate

C/sec

Time maintained above:
- Temperature (T

)

- Time (t

)

183

60~150 sec

217

60~150 sec

Peak Temperature (T

)

240

C +0/-5

260

C +0/-5

Time within 5

C of actual Peak

Temperature (t

)

10~30 sec

20~40 sec

Ramp-down Rate

C/sec

Time 25

C to Peak Temperature

<6 minutes

<8 minutes

3. Flow (wave) soldering (solder dipping)

Products

Peak temperature

Dipping time

Pb devices.

245

5sec

1sec

Pb-Free devices.

260

C +0/-5

5sec

1sec

Figure 1: Temperature profile

Ramp-down

Ramp-up

max

min

Critical Zone

to T

Preheat

t 25

C to Peak

Time

Tem

erature

Part Number H01N45A