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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

HMC578

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 24 - 33 GHz OUTPUT

v00.0506

General Description

Features

Functional Diagram

Electrical Specifications,

= +25° C, Vdd1, Vdd2 = 5.0V, 3 dBm Drive Level

Typical Applications

The HMC578 is suitable for:

· Clock Generation Applications:

SONET OC-192 & SDH STM-64

· Point-to-Point & VSAT Radios

· Test Instrumentation

· Military EW / Radar

· Space

The HMC578 die is a x2 active broadband frequency

multiplier utilizing GaAs PHEMT technology. When

driven by a +3 dBm signal, the multiplier provides +17

dBm typical output power from 24 to 33 GHz. The Fo and

3Fo isolations are >25 dBc and >36 dBc respectively

at 28 GHz. The HMC578 is ideal for use in LO multiplier

chains for Pt to Pt & VSAT Radios yielding reduced

parts count vs. traditional approaches. The low additive

SSB Phase Noise of -132 dBc/Hz at 100 kHz offset

helps maintain good system noise performance.

High Output Power: +17 dBm

Low Input Power Drive: 0 to +6 dBm

Fo Isolation: >25 dBc @ Fout= 28 GHz

100 KHz SSB Phase Noise: -132 dBc/Hz

Single Supply: +5V@ 81 mA

Die Size: 1.18 mm x 1.23 mm x 0.1 mm

Parameter

Min.

Typ. Max.

Units

Frequency Range, Input

12 - 16.5

GHz

Frequency Range, Output

24 - 33

GHz

Output Power

dBm

Fo Isolation (with respect to output level)

dBc

3Fo Isolation (with respect to output level)

dBc

Input Return Loss

Output Return Loss

SSB Phase Noise (100 kHz Offset)

-132

dBc/Hz

Supply Current (Idd1 & Idd2)

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Output Power vs.
Temperature @ 3 dBm Drive Level

Output Power vs.
Supply Voltage @ 3 dBm Drive Level

Output Power vs. Drive Level

Output Power vs. Input Power

Isolation @ 3 dBm Drive Level

+25C
+85C
-55C

OUTPUT POWER (dBm)

OUTPUT FREQUENCY (GHz)

HMC578

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 24 - 33 GHz OUTPUT

v00.0506

-20

-10

2Fo
3Fo

OUTPUT POWER (dBm)

OUTPUT FREQUENCY (GHz)

-20

-15

-10

-5

-10

-8

-6

-4

-2

24GHz
28GHz
33GHz

OUTPUT POWER (dBm)

INPUT POWER (dBm)

Vdd=4.5V
Vdd=5.0V
Vdd=5.5V

OUTPUT POWER (dBm)

OUTPUT FREQUENCY (GHz)

-25

-20

-15

-10

-5

-6dBm
-4dBm
-2dBm
0dBm

2dBm
4dBm
6dBm

OUTPUT POWER (dBm)

OUTPUT FREQUENCY (GHz)

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Absolute Maximum Ratings

Outline Drawing

RF Input (Vdd = +5V)

+13 dBm

Supply Voltage (Vdd1, Vdd2)

+6.0 Vdc

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)
(derate 7.8 mW/°C above 85 °C)

703 mW

Thermal Resistance
(channel to die bottom)

128 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].

2. DIE THICKNESS IS .004"

3. TYPICAL BOND PAD IS .004" SQUARE.

4. TYPICAL BOND SPACING IS .006" CENTER TO CENTER.

5. BOND PAD METALIZATION: GOLD

6. BACKSIDE METALIZATION: GOLD

7. BACKSIDE METAL IS GROUND.

8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.

Typical Supply Current vs. Vdd

Vdd (Vdc)

Idd (mA)

4.5

5.0

5.5

Note:
Multiplier will operate over full voltage range shown above.

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

Die Packaging Information

[1]

Standard

Alternate [2]

GP-2

[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] Reference this suffi x only when ordering alternate die
packaging.

HMC578

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 24 - 33 GHz OUTPUT

v00.0506

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).

Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended.

Handling Precautions

Follow these precautions to avoid permanent damage.

Storage: All bare die are placed in either Waffl e or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.

Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.

Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and fl at.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the
chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required
for attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.

Wire Bonding

Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).

0.102mm (0.004") Thick GaAs MMIC

Wire 3 mil Ribbon Bond

RF Ground Plane

0.127mm (0.005") Thick Alumina

Thin Film Substrate

0.076mm

(0.003")

Figure 1.

0.102mm (0.004") Thick GaAs MMIC

Ribbon Bond

RF Ground Plane

0.254mm (0.010") Thick Alumina

Thin Film Substrate

0.076mm

(0.003")

Figure 2.

0.150mm (0.005") Thick
Moly Tab

HMC578

v00.0506

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 24 - 33 GHz OUTPUT

Part Number HMC578