15
V
C
Os - SM
T
15 - 102
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MMIC VCO w/ BUFFER
AMPLIFIER, 7.8 - 8.7 GHz
v00.0804
General Description
Features
Functional Diagram
The HMC506LP4 is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO with
integrated resonator, negative resistance device,
varactor diode, and buffer amplifi er. Covering
7.8 to 8.7 GHz, the VCO's phase noise perfor-
mance is excellent over temperature, shock and
vibration due to the oscillator's monolithic struc-
ture. Power output is +14 dBm typical from a
single supply of +3.0V @ 77 mA. The voltage
controlled oscillator is packaged in a leadless
QFN 4 x 4 mm surface mount package.
Pout: +14 dBm
Phase Noise: -103 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: +3V @ 77 mA
QFN Leadless SMT Package, 16 mm
2
Typical Applications
Low noise MMIC VCO w/Buffer Amplifi er for:
· VSAT Radio
· Point to Point/Multipoint Radio
· Test Equipment & Industrial Controls
· Military End-Use
Electrical Specifi cations,
T
A
= +25° C, Vcc = +3V
Parameter
Min.
Typ.
Max.
Units
Frequency Range
7.8 - 8.7
GHz
Power Output
11.0
14.0
dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
-103
dBc/Hz
Tune Voltage (Vtune)
1
11
V
Supply Current (Icc) (Vcc = +3.0V)
77
mA
Tune Port Leakage Current
10
µA
Output Return Loss
7
dB
Harmonics
2nd
3rd
-16
-28
dBc
dBc
Pulling (into a 2.0:1 VSWR)
28
MHz pp
Pushing @ Vtune= +5V
78
MHz/V
Frequency Drift Rate
0.85
MHz/°C
HMC506LP4
15
V
C
Os - SM
T
15 - 103
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Frequency vs. Tuning Voltage, T= 25°C
Sensitivity vs. Tuning Voltage, Vcc= +3V
Typical SSB Phase Noise @ Vtune= +5V
Phase Noise vs. Tuning Voltage
Frequency vs. Tuning Voltage, Vcc= +3V
Output Power vs.
Tuning Voltage, Vcc= +3V
MMIC VCO w/ BUFFER
AMPLIFIER, 7.8 - 8.7 GHz
HMC506LP4
v00.0804
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
9
9.2
0
1
2
3
4
5
6
7
8
9
10
11
2.75V
3.0V
3.25V
FREQUENCY (GHz)
TUNING VOLTAGE (VOLTS)
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
9
9.2
0
1
2
3
4
5
6
7
8
9
10
11
+25C
+85C
-40C
FREQUENCY (GHz)
TUNING VOLTAGE (VOLTS)
40
80
120
160
200
240
280
320
360
400
0
1
2
3
4
5
6
7
8
9
10
11
+25C
+85C
-40C
SENSITIVITY (MHz/VOLT)
TUNING VOLTAGE (VOLTS)
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
11
+25C
+85C
-40C
OUTPUT POWER (dBm)
TUNING VOLTAGE (VOLTS)
-160
-140
-120
-100
-80
-60
-40
-20
0
10
3
10
4
10
5
10
6
10
7
+25C
+85C
-40C
SSB PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
-125
-120
-115
-110
-105
-100
-95
-90
-85
-80
-75
-70
-65
-60
0
1
2
3
4
5
6
7
8
9
10
11
10kHz offset
100kHz offset
SSB PHASE NOISE (dBc/Hz)
TUNING VOLTAGE (VOLTS)
15
V
C
Os - SM
T
15 - 104
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MMIC VCO w/ BUFFER
AMPLIFIER, 7.8 - 8.7 GHz
HMC506LP4
v00.0804
Absolute Maximum Ratings
Outline Drawing
Vcc
+3.5 Vdc
Vtune
0 to +11V
Channel Temperature
135 °C
Continuous Pdiss (T = 85°C)
(derate 6.07 mW/°C above 85°C)
303 mW
Thermal Resistance
(junction to ground paddle)
165 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Typical Supply Current vs. Vcc
Note: VCO will operate over full voltage range shown above.
Vcc (V)
Icc (mA)
2.75
66
3.0
77
3.25
88
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
10. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
15
V
C
Os - SM
T
15 - 105
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MMIC VCO w/ BUFFER
AMPLIFIER, 7.8 - 8.7 GHz
HMC506LP4
v00.0804
Pin Number
Function
Description
Interface Schematic
1- 14, 17 - 19,
21, 23, 24
N/C
No Connection
15
GND
This pin must be connected to RF & DC ground.
16
RFOUT
RF output (AC coupled)
20
Vcc
Supply Voltage Vcc= 3V
22
VTUNE
Control Voltage Input. Modulation port bandwidth
dependent on drive source impedance.
GND
Package bottom has an exposed metal paddle that
must be RF & DC grounded.
Pin Descriptions
15
V
C
Os - SM
T
15 - 106
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MMIC VCO w/ BUFFER
AMPLIFIER, 7.8 - 8.7 GHz
HMC506LP4
v00.0804
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
suffi cient number of via holes should be used to con-
nect the top and bottom ground planes. The evalua-
tion circuit board shown is available from Hittite upon
request.
Evaluation PCB
List of Materials for Evaluation PCB 105706*
Item
Description
J1 - J2
PC Mount SMA RF Connector
J3 - J4
DC Pin
C1
4.7 µF Tantalum Capacitor
C2
10,000 pF Capacitor, 0603 Pkg.
U1
HMC506LP4 VCO
PCB**
105667 Eval Board
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
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